ATE396499T1 - Photodetektor mit grossem dynamikbereich und erhöhtem arbeitstemperaturbereich - Google Patents

Photodetektor mit grossem dynamikbereich und erhöhtem arbeitstemperaturbereich

Info

Publication number
ATE396499T1
ATE396499T1 AT01811011T AT01811011T ATE396499T1 AT E396499 T1 ATE396499 T1 AT E396499T1 AT 01811011 T AT01811011 T AT 01811011T AT 01811011 T AT01811011 T AT 01811011T AT E396499 T1 ATE396499 T1 AT E396499T1
Authority
AT
Austria
Prior art keywords
range
photodiode
photodetector
control voltage
working temperature
Prior art date
Application number
AT01811011T
Other languages
English (en)
Inventor
Peter Seitz
Original Assignee
Suisse Electronique Microtech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suisse Electronique Microtech filed Critical Suisse Electronique Microtech
Application granted granted Critical
Publication of ATE396499T1 publication Critical patent/ATE396499T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT01811011T 2001-10-16 2001-10-16 Photodetektor mit grossem dynamikbereich und erhöhtem arbeitstemperaturbereich ATE396499T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01811011A EP1302986B1 (de) 2001-10-16 2001-10-16 Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich

Publications (1)

Publication Number Publication Date
ATE396499T1 true ATE396499T1 (de) 2008-06-15

Family

ID=8184192

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01811011T ATE396499T1 (de) 2001-10-16 2001-10-16 Photodetektor mit grossem dynamikbereich und erhöhtem arbeitstemperaturbereich

Country Status (5)

Country Link
US (1) US6921891B2 (de)
EP (1) EP1302986B1 (de)
JP (1) JP2003202264A (de)
AT (1) ATE396499T1 (de)
DE (1) DE60134143D1 (de)

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US6974973B2 (en) * 2002-11-08 2005-12-13 Micron Technology, Inc. Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager
US7115855B2 (en) * 2003-09-05 2006-10-03 Micron Technology, Inc. Image sensor having pinned floating diffusion diode
WO2005074250A1 (fr) * 2004-02-01 2005-08-11 Susanna Pita Capteur optoelectronique a haute dynamique avec faible bruit d’offset
KR20060023890A (ko) * 2004-09-11 2006-03-15 학교법인연세대학교 광응답특성을 제어할 수 있는 광대역 ｃｍｏｓ 이미지센서및 광응답특성 제어방법
JP4807014B2 (ja) * 2005-09-02 2011-11-02 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
EP1763220A1 (de) 2005-09-07 2007-03-14 CSEM Centre Suisse d'Electronique et de Microtechnique SA Festkörperbildsensor mit hoher Empfindlichkeit und erweitertem Dynamikbereich
EP1863091A3 (de) * 2006-05-30 2012-11-21 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und elektronische Vorrichtung damit
JP4353224B2 (ja) 2006-09-25 2009-10-28 エプソンイメージングデバイス株式会社 光検出装置、電気光学装置、および電子機器
EP2432015A1 (de) 2007-04-18 2012-03-21 Invisage Technologies, Inc. Materialien, System und Verfahren für optoelektronische Geräte
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
KR100958028B1 (ko) * 2008-02-13 2010-05-17 삼성모바일디스플레이주식회사 광센서 및 그를 이용한 평판표시장치
US8138567B2 (en) * 2008-04-18 2012-03-20 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
US8203195B2 (en) 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
KR101015884B1 (ko) * 2008-07-16 2011-02-23 삼성모바일디스플레이주식회사 손가락 열에 의한 전류를 제거하는 터치 패널 구동회로 및 이를 포함하는 터치 패널
JP5491131B2 (ja) * 2008-11-12 2014-05-14 株式会社半導体エネルギー研究所 光電変換装置
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
TWI400944B (zh) * 2009-07-16 2013-07-01 Au Optronics Corp 影像感測器
US8916947B2 (en) 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
JP5986551B2 (ja) * 2013-10-03 2016-09-06 旭化成エレクトロニクス株式会社 センサ処理回路及びそのオフセット検出方法
WO2015105048A1 (ja) * 2014-01-08 2015-07-16 旭化成エレクトロニクス株式会社 ダイオード型センサの出力電流検出ｉｃチップ及びダイオード型センサ装置
FR3053503B1 (fr) * 2016-06-30 2019-03-29 Stmicroelectronics (Rousset) Sas Procede de protection d'un circuit integre, et circuit integre correspondant
JP6696695B2 (ja) * 2017-03-16 2020-05-20 株式会社東芝 光検出装置およびこれを用いた被写体検知システム
CN107014489B (zh) * 2017-04-27 2018-05-08 浙江工业大学 一种光多参量传感cmos单片集成电路
US10340852B2 (en) * 2017-10-13 2019-07-02 Northrop Grumman Systems Corporation Bias boosting circuit for amplifier
CN112362159B (zh) * 2017-12-05 2024-01-19 上海耕岩智能科技有限公司 光侦测像素结构、光侦测器件、光侦测装置
JP7150504B2 (ja) * 2018-07-18 2022-10-11 キヤノン株式会社 固体撮像装置及びその駆動方法
US11587962B2 (en) 2020-07-15 2023-02-21 Raytheon Company Imaging system including analog compression for simultaneous pulse detection and imaging
CN114245047B (zh) * 2021-12-21 2024-03-05 上海集成电路装备材料产业创新中心有限公司 像素单元及图像传感器

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JPS61187267A (ja) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd 固体撮像装置
FR2638286B1 (fr) * 1988-10-25 1990-12-07 Thomson Csf Dispositif photosensible du type a amplification du signal au niveau des points photosensibles
US5376782A (en) * 1992-03-04 1994-12-27 Fuji Xerox Co., Ltd. Image pickup device providing decreased image lag
GB9505305D0 (en) * 1995-03-16 1995-05-03 Philips Electronics Uk Ltd Electronic devices comprising an array
US5721425A (en) * 1996-03-01 1998-02-24 National Semiconductor Corporation Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell
DE69833998T2 (de) 1998-11-18 2007-04-05 C.S.E.M. Centre Suisse D'electronique Et De Microtechnique S.A. Bilderzeugungsverfahren und -vorrichtung
US6498331B1 (en) * 1999-12-21 2002-12-24 Pictos Technologies, Inc. Method and apparatus for achieving uniform low dark current with CMOS photodiodes

Also Published As

Publication number Publication date
US20030071196A1 (en) 2003-04-17
EP1302986B1 (de) 2008-05-21
US6921891B2 (en) 2005-07-26
EP1302986A1 (de) 2003-04-16
JP2003202264A (ja) 2003-07-18
DE60134143D1 (de) 2008-07-03

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