IT1318431B1 - Derivati di ossime e loro impiego come acidi latenti. - Google Patents
Derivati di ossime e loro impiego come acidi latenti.Info
- Publication number
- IT1318431B1 IT1318431B1 IT2000MI000662A ITMI20000662A IT1318431B1 IT 1318431 B1 IT1318431 B1 IT 1318431B1 IT 2000MI000662 A IT2000MI000662 A IT 2000MI000662A IT MI20000662 A ITMI20000662 A IT MI20000662A IT 1318431 B1 IT1318431 B1 IT 1318431B1
- Authority
- IT
- Italy
- Prior art keywords
- alkyl
- optionally substituted
- acid
- alkylsulfonyl
- phenyl
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G7/00—Selection of materials for use in image-receiving members, i.e. for reversal by physical contact; Manufacture thereof
- G03G7/0006—Cover layers for image-receiving members; Strippable coversheets
- G03G7/002—Organic components thereof
- G03G7/0026—Organic components thereof being macromolecular
- G03G7/004—Organic components thereof being macromolecular obtained by reactions only involving carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/32—Oximes
- C07C251/62—Oximes having oxygen atoms of oxyimino groups esterified
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
- C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C317/00—Sulfones; Sulfoxides
- C07C317/26—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
- C07C317/32—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton with sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/23—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
- C07C323/46—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms
- C07C323/47—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms to oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D319/00—Heterocyclic compounds containing six-membered rings having two oxygen atoms as the only ring hetero atoms
- C07D319/10—1,4-Dioxanes; Hydrogenated 1,4-dioxanes
- C07D319/14—1,4-Dioxanes; Hydrogenated 1,4-dioxanes condensed with carbocyclic rings or ring systems
- C07D319/16—1,4-Dioxanes; Hydrogenated 1,4-dioxanes condensed with carbocyclic rings or ring systems condensed with one six-membered ring
- C07D319/18—Ethylenedioxybenzenes, not substituted on the hetero ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
- C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
- C07D333/22—Radicals substituted by doubly bound hetero atoms, or by two hetero atoms other than halogen singly bound to the same carbon atom
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2602/00—Systems containing two condensed rings
- C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
- C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99810273 | 1999-03-31 | ||
EP99810287 | 1999-04-07 | ||
EP99810779 | 1999-08-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI20000662A0 ITMI20000662A0 (it) | 2000-03-30 |
ITMI20000662A1 ITMI20000662A1 (it) | 2001-09-30 |
IT1318431B1 true IT1318431B1 (it) | 2003-08-25 |
Family
ID=27240245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2000MI000662A IT1318431B1 (it) | 1999-03-31 | 2000-03-30 | Derivati di ossime e loro impiego come acidi latenti. |
Country Status (12)
Families Citing this family (68)
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TWI272451B (en) * | 2000-09-25 | 2007-02-01 | Ciba Sc Holding Ag | Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition |
DE60234095D1 (de) * | 2001-06-11 | 2009-12-03 | Basf Se | Oxim ester photoinitiatoren mit kombinierter struktur |
US6824954B2 (en) * | 2001-08-23 | 2004-11-30 | Jsr Corporation | Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same |
BR0307501A (pt) * | 2002-02-06 | 2004-12-07 | Ciba Sc Holding Ag | Derivados de sulfonato e o uso destes como ácidos latentes |
US6875480B2 (en) * | 2002-02-27 | 2005-04-05 | Industrial Technology Research Institute | Method of enhancement of electrical conductivity for conductive polymer by use of field effect control |
JP3841405B2 (ja) * | 2002-03-29 | 2006-11-01 | 富士写真フイルム株式会社 | ネガ型レジスト組成物 |
EP1595182B1 (en) * | 2003-02-19 | 2015-09-30 | Basf Se | Halogenated oxime derivatives and the use thereof as latent acids |
US7098463B2 (en) * | 2003-03-03 | 2006-08-29 | Heuris Pharma, Llc | Three-dimensional dosimeter for penetrating radiation and method of use |
WO2006008250A2 (en) * | 2004-07-20 | 2006-01-26 | Ciba Specialty Chemicals Holding Inc. | Oxime derivatives and the use therof as latent acids |
TWI332122B (en) | 2005-04-06 | 2010-10-21 | Shinetsu Chemical Co | Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process |
JP4626758B2 (ja) * | 2005-07-07 | 2011-02-09 | 信越化学工業株式会社 | 含フッ素環状構造を有するケイ素化合物及びシリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法 |
US20070077452A1 (en) * | 2005-10-04 | 2007-04-05 | Jie Liu | Organic light emitting devices having latent activated layers and methods of fabricating the same |
KR100814231B1 (ko) * | 2005-12-01 | 2008-03-17 | 주식회사 엘지화학 | 옥심 에스테르를 포함하는 트리아진계 광활성 화합물을포함하는 투명한 감광성 조성물 |
US20070176167A1 (en) * | 2006-01-27 | 2007-08-02 | General Electric Company | Method of making organic light emitting devices |
TWI406840B (zh) * | 2006-02-24 | 2013-09-01 | Fujifilm Corp | 肟衍生物、光聚合性組成物、彩色濾光片及其製法 |
US8293436B2 (en) * | 2006-02-24 | 2012-10-23 | Fujifilm Corporation | Oxime derivative, photopolymerizable composition, color filter, and process for producing the same |
US7771913B2 (en) * | 2006-04-04 | 2010-08-10 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
JP4548617B2 (ja) * | 2006-06-09 | 2010-09-22 | 信越化学工業株式会社 | 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法 |
JP4623311B2 (ja) * | 2006-06-14 | 2011-02-02 | 信越化学工業株式会社 | 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法 |
JP2009541254A (ja) * | 2006-06-20 | 2009-11-26 | チバ ホールディング インコーポレーテッド | オキシムスルホネート及び潜酸としてのその使用 |
KR101035742B1 (ko) * | 2006-09-28 | 2011-05-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규 광산 발생제 및 이것을 이용한 레지스트 재료 및 패턴형성 방법 |
JP4509080B2 (ja) * | 2006-09-28 | 2010-07-21 | 信越化学工業株式会社 | シルセスキオキサン系化合物混合物及び加水分解性シラン化合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法及び基板の加工方法 |
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JP4784760B2 (ja) * | 2006-10-20 | 2011-10-05 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
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JP2008129389A (ja) * | 2006-11-22 | 2008-06-05 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料及びパターン形成方法 |
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JP5071658B2 (ja) * | 2008-02-14 | 2012-11-14 | 信越化学工業株式会社 | レジスト材料、レジスト保護膜材料、及びパターン形成方法 |
JP5131461B2 (ja) * | 2008-02-14 | 2013-01-30 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
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JP5245956B2 (ja) * | 2008-03-25 | 2013-07-24 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP4569786B2 (ja) | 2008-05-01 | 2010-10-27 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
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JP4743451B2 (ja) * | 2008-09-05 | 2011-08-10 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4743450B2 (ja) * | 2008-09-05 | 2011-08-10 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
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JP5177434B2 (ja) * | 2009-04-08 | 2013-04-03 | 信越化学工業株式会社 | パターン形成方法 |
US8691925B2 (en) | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
US8686109B2 (en) | 2012-03-09 | 2014-04-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Methods and materials for removing metals in block copolymers |
US8835581B2 (en) | 2012-06-08 | 2014-09-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Neutral layer polymer composition for directed self assembly and processes thereof |
US10457088B2 (en) | 2013-05-13 | 2019-10-29 | Ridgefield Acquisition | Template for self assembly and method of making a self assembled pattern |
US9093263B2 (en) | 2013-09-27 | 2015-07-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | Underlayer composition for promoting self assembly and method of making and using |
US9181449B2 (en) | 2013-12-16 | 2015-11-10 | Az Electronic Materials (Luxembourg) S.A.R.L. | Underlayer composition for promoting self assembly and method of making and using |
KR101491975B1 (ko) | 2014-03-14 | 2015-02-11 | (주)휴넷플러스 | 화학 증폭형 포지티브 감광성 경화 수지 조성물, 이를 이용한 경화막의 제조 방법 및 경화막을 포함하는 전자소자 |
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JP6997764B2 (ja) | 2016-08-18 | 2022-01-18 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 自己組織化用途用のポリマー組成物 |
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CN110325912B (zh) * | 2017-02-23 | 2023-07-14 | 艾曲迪微系统股份有限公司 | 感光性树脂组合物、图案的制造方法、固化物、层间绝缘膜、覆盖涂层、保护膜和电子部件 |
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US6042988A (en) * | 1996-12-26 | 2000-03-28 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-amplification-type negative resist composition |
TW550439B (en) * | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
WO2000026219A1 (en) * | 1998-10-29 | 2000-05-11 | Ciba Specialty Chemicals Holding Inc. | Oxime derivatives and the use thereof as latent acids |
TW588221B (en) * | 2000-09-07 | 2004-05-21 | Shinetsu Chemical Co | Polymers, resist compositions and patterning process |
-
2000
- 2000-03-02 NL NL1014545A patent/NL1014545C2/nl not_active IP Right Cessation
- 2000-03-10 MY MYPI20000951A patent/MY116074A/en unknown
- 2000-03-27 CH CH00595/00A patent/CH694663A5/de not_active IP Right Cessation
- 2000-03-28 SE SE0001090A patent/SE522082C2/sv not_active IP Right Cessation
- 2000-03-29 CA CA002302875A patent/CA2302875A1/en not_active Abandoned
- 2000-03-30 AT AT0054200A patent/AT410262B/de not_active IP Right Cessation
- 2000-03-30 BE BE2000/0228A patent/BE1013627A3/fr not_active IP Right Cessation
- 2000-03-30 ES ES200000798A patent/ES2168953B1/es not_active Expired - Fee Related
- 2000-03-30 IT IT2000MI000662A patent/IT1318431B1/it active
- 2000-03-30 KR KR1020000016548A patent/KR100700901B1/ko active IP Right Grant
- 2000-03-30 AU AU24200/00A patent/AU766803B2/en not_active Ceased
-
2001
- 2001-03-28 US US09/820,115 patent/US6512020B1/en not_active Expired - Lifetime
-
2002
- 2002-02-15 NL NL1019981A patent/NL1019981C2/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL1014545C2 (nl) | 2002-02-26 |
US6512020B1 (en) | 2003-01-28 |
ES2168953B1 (es) | 2003-10-16 |
NL1019981C2 (nl) | 2002-10-03 |
CH694663A5 (de) | 2005-05-31 |
MY116074A (en) | 2003-10-31 |
AU766803B2 (en) | 2003-10-23 |
NL1019981A1 (nl) | 2002-04-11 |
SE0001090D0 (sv) | 2000-03-28 |
ITMI20000662A0 (it) | 2000-03-30 |
SE0001090L (sv) | 2000-10-01 |
ITMI20000662A1 (it) | 2001-09-30 |
CA2302875A1 (en) | 2000-09-30 |
KR100700901B1 (ko) | 2007-03-29 |
SE522082C2 (sv) | 2004-01-13 |
ES2168953A1 (es) | 2002-06-16 |
KR20000063080A (ko) | 2000-10-25 |
AT410262B (de) | 2003-03-25 |
ATA5422000A (de) | 2002-07-15 |
NL1014545A1 (nl) | 2000-10-03 |
BE1013627A3 (fr) | 2002-05-07 |
AU2420000A (en) | 2000-10-05 |
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