IT1256055B - Dispositivo di memoria a semiconduttore avente una funzione di selezione di blocchi con bassi consumi di potenza - Google Patents

Dispositivo di memoria a semiconduttore avente una funzione di selezione di blocchi con bassi consumi di potenza

Info

Publication number
IT1256055B
IT1256055B ITMI921988A ITMI921988A IT1256055B IT 1256055 B IT1256055 B IT 1256055B IT MI921988 A ITMI921988 A IT MI921988A IT MI921988 A ITMI921988 A IT MI921988A IT 1256055 B IT1256055 B IT 1256055B
Authority
IT
Italy
Prior art keywords
memory device
semiconductor memory
blocks
power consumption
low power
Prior art date
Application number
ITMI921988A
Other languages
English (en)
Italian (it)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of ITMI921988A0 publication Critical patent/ITMI921988A0/it
Publication of ITMI921988A1 publication Critical patent/ITMI921988A1/it
Application granted granted Critical
Publication of IT1256055B publication Critical patent/IT1256055B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
ITMI921988A 1991-08-14 1992-08-13 Dispositivo di memoria a semiconduttore avente una funzione di selezione di blocchi con bassi consumi di potenza IT1256055B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014100A KR950004853B1 (ko) 1991-08-14 1991-08-14 저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치

Publications (3)

Publication Number Publication Date
ITMI921988A0 ITMI921988A0 (it) 1992-08-13
ITMI921988A1 ITMI921988A1 (it) 1994-02-13
IT1256055B true IT1256055B (it) 1995-11-23

Family

ID=19318647

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921988A IT1256055B (it) 1991-08-14 1992-08-13 Dispositivo di memoria a semiconduttore avente una funzione di selezione di blocchi con bassi consumi di potenza

Country Status (8)

Country Link
US (1) US5327389A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0713868B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR950004853B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4226825C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2680428B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2259383A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1256055B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW220010B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130163A (ja) * 1993-11-01 1995-05-19 Matsushita Electron Corp 半導体メモリ
JP2725570B2 (ja) * 1993-11-02 1998-03-11 日本電気株式会社 半導体メモリ装置
KR0120592B1 (ko) * 1994-09-09 1997-10-20 김주용 신호 변환 장치를 갖고 있는 어드레스 입력버퍼
JPH08194679A (ja) * 1995-01-19 1996-07-30 Texas Instr Japan Ltd ディジタル信号処理方法及び装置並びにメモリセル読出し方法
KR0142962B1 (ko) * 1995-05-12 1998-08-17 김광호 계급적 컬럼선택라인구조를 가지는 반도체 메모리 장치
US5729501A (en) * 1995-09-08 1998-03-17 International Business Machines Corporation High Speed SRAM with or-gate sense
KR100203145B1 (ko) * 1996-06-29 1999-06-15 김영환 반도체 메모리 소자의 뱅크 분산 방법
KR100311035B1 (ko) * 1997-11-21 2002-02-28 윤종용 효율적으로 배치된 패드들을 갖는 반도체 메모리 장치
US6038634A (en) * 1998-02-02 2000-03-14 International Business Machines Corporation Intra-unit block addressing system for memory
US6246630B1 (en) 1998-02-02 2001-06-12 International Business Machines Corporation Intra-unit column address increment system for memory
US6002275A (en) * 1998-02-02 1999-12-14 International Business Machines Corporation Single ended read write drive for memory
US6118726A (en) * 1998-02-02 2000-09-12 International Business Machines Corporation Shared row decoder
US6944087B2 (en) * 2001-02-24 2005-09-13 Intel Corporation Method and apparatus for off boundary memory access
US6347052B1 (en) * 2000-08-31 2002-02-12 Advanced Micro Devices Inc. Word line decoding architecture in a flash memory
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US9817595B2 (en) 2016-01-28 2017-11-14 Apple Inc. Management of peak power consumed by multiple memory devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (ja) * 1981-07-08 1983-01-19 Toshiba Corp 半導体装置
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
JPS6059588A (ja) * 1983-09-12 1985-04-05 Hitachi Ltd 半導体記憶装置
JPS60231996A (ja) * 1984-04-28 1985-11-18 Mitsubishi Electric Corp 半導体記憶装置
JPS60234295A (ja) * 1984-05-04 1985-11-20 Fujitsu Ltd 半導体記憶装置
JPS62136919A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp ドライバ−回路
NL8602178A (nl) * 1986-08-27 1988-03-16 Philips Nv Geintegreerde geheugenschakeling met blokselektie.
KR880008330A (ko) * 1986-12-30 1988-08-30 강진구 스테이틱 램의 프리차아지 시스템
JPS643896A (en) * 1987-06-24 1989-01-09 Mitsubishi Electric Corp Semiconductor dynamic ram
JPS6457495A (en) * 1987-08-28 1989-03-03 Hitachi Ltd Semiconductor memory device
DE3776798D1 (de) * 1987-11-23 1992-03-26 Philips Nv Schnell arbeitender statischer ram-speicher mit grosser kapazitaet.

Also Published As

Publication number Publication date
ITMI921988A0 (it) 1992-08-13
JPH0713868B2 (ja) 1995-02-15
US5327389A (en) 1994-07-05
JPH05198164A (ja) 1993-08-06
DE4226825C2 (de) 1997-05-15
DE4226825A1 (de) 1993-02-18
ITMI921988A1 (it) 1994-02-13
KR930005025A (ko) 1993-03-23
FR2680428B1 (fr) 1995-05-19
GB9217372D0 (en) 1992-09-30
TW220010B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-02-01
FR2680428A1 (fr) 1993-02-19
KR950004853B1 (ko) 1995-05-15
GB2259383A (en) 1993-03-10

Similar Documents

Publication Publication Date Title
IT1256055B (it) Dispositivo di memoria a semiconduttore avente una funzione di selezione di blocchi con bassi consumi di potenza
EP1328941A4 (en) MODULAR MEMORY BLOCK
TW430801B (en) Dynamic type semiconductor memory
KR920020495A (ko) 반도체 기억장치
WO2002078001A3 (en) Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays
EP0480752A3 (en) Semiconductor memory device with short circuit identifying means
TW333647B (en) The semiconductor IC device
TW344819B (en) Semiconductor memory device
JPS57150190A (en) Monolithic storage device
JPS56137589A (en) Semiconductor storage device
ATE420439T1 (de) Low-power controller für standby-betrieb eines speichersystems
KR930005020A (ko) 망사 구조의 전원선을 가지는 반도체 메모리 장치
MX9502241A (es) Dispositivo semiconductor de memoria para obtener un ancho de banda grande o alto y metodo para arreglar las lineas de señales para el mismo.
IT1265428B1 (it) Dispositivo di memoria a semiconduttore con disposizione di bit di dati di ingresso / uscita cambiabile
KR960005618A (ko) 반도체 기억장치
KR930015355A (ko) 이중전압 아이솔레이션을 갖춘 고속 3단 디코더
GB2314654A (en) A method for distributing banks in a semiconductor memory device
TW345662B (en) Semiconductor integrated circuit device having means for peak current reduction
TW338162B (en) A semiconductor memory with a lockable memory cells
JPS6419584A (en) Semiconductor memory device
IT1250088B (it) Disposizione per stadio pilota di linea di parola per dispositivi di memoria a semiconduttori.
IT1258255B (it) Dispositivo di memoria a semiconduttore per memorizzare dati e bit di parita'
TW328648B (en) The semiconductor memory device having widely space bit lines
IT1258816B (it) Disposizione di una schiera di celle ridondanti per un dispositivo di memoria a semiconduttore
TW200502979A (en) Semiconductor memory device

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970826