GB2259383A - Block selection in semiconductor memory devices - Google Patents

Block selection in semiconductor memory devices Download PDF

Info

Publication number
GB2259383A
GB2259383A GB9217372A GB9217372A GB2259383A GB 2259383 A GB2259383 A GB 2259383A GB 9217372 A GB9217372 A GB 9217372A GB 9217372 A GB9217372 A GB 9217372A GB 2259383 A GB2259383 A GB 2259383A
Authority
GB
United Kingdom
Prior art keywords
row address
subblocks
address signals
selecting
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9217372A
Other languages
English (en)
Other versions
GB9217372D0 (en
Inventor
Yong-Sik Seok
Dong-Sun Min
Dong-Soojun
Jae-Gu Roh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9217372D0 publication Critical patent/GB9217372D0/en
Publication of GB2259383A publication Critical patent/GB2259383A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
GB9217372A 1991-08-14 1992-08-14 Block selection in semiconductor memory devices Withdrawn GB2259383A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014100A KR950004853B1 (ko) 1991-08-14 1991-08-14 저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
GB9217372D0 GB9217372D0 (en) 1992-09-30
GB2259383A true GB2259383A (en) 1993-03-10

Family

ID=19318647

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9217372A Withdrawn GB2259383A (en) 1991-08-14 1992-08-14 Block selection in semiconductor memory devices

Country Status (8)

Country Link
US (1) US5327389A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0713868B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR950004853B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4226825C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2680428B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2259383A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1256055B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW220010B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2314654A (en) * 1996-06-29 1998-01-07 Hyundai Electronics Ind A method for distributing banks in a semiconductor memory device
EP0733981A3 (en) * 1995-01-19 1998-09-16 Texas Instruments Incorporated Digital signal processing method and apparatus and memory cell reading method
GB2331607A (en) * 1997-11-21 1999-05-26 Samsung Electronics Co Ltd A semiconductor memory device having pads effectively disposed in the interior

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130163A (ja) * 1993-11-01 1995-05-19 Matsushita Electron Corp 半導体メモリ
JP2725570B2 (ja) * 1993-11-02 1998-03-11 日本電気株式会社 半導体メモリ装置
KR0120592B1 (ko) * 1994-09-09 1997-10-20 김주용 신호 변환 장치를 갖고 있는 어드레스 입력버퍼
KR0142962B1 (ko) * 1995-05-12 1998-08-17 김광호 계급적 컬럼선택라인구조를 가지는 반도체 메모리 장치
US5729501A (en) * 1995-09-08 1998-03-17 International Business Machines Corporation High Speed SRAM with or-gate sense
US6038634A (en) * 1998-02-02 2000-03-14 International Business Machines Corporation Intra-unit block addressing system for memory
US6246630B1 (en) 1998-02-02 2001-06-12 International Business Machines Corporation Intra-unit column address increment system for memory
US6002275A (en) * 1998-02-02 1999-12-14 International Business Machines Corporation Single ended read write drive for memory
US6118726A (en) * 1998-02-02 2000-09-12 International Business Machines Corporation Shared row decoder
US6944087B2 (en) * 2001-02-24 2005-09-13 Intel Corporation Method and apparatus for off boundary memory access
US6347052B1 (en) * 2000-08-31 2002-02-12 Advanced Micro Devices Inc. Word line decoding architecture in a flash memory
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US9817595B2 (en) 2016-01-28 2017-11-14 Apple Inc. Management of peak power consumed by multiple memory devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147756A (en) * 1983-09-12 1985-05-15 Hitachi Ltd Semiconductor memory device
GB2159359A (en) * 1984-04-28 1985-11-27 Mitsubishi Electric Corp Semiconductor static memory device
US4636982A (en) * 1984-05-04 1987-01-13 Fujitsu Limited Semiconductor memory device
EP0257680A1 (en) * 1986-08-27 1988-03-02 Koninklijke Philips Electronics N.V. Integrated memory circuit utilizing block selection
US4972373A (en) * 1986-12-30 1990-11-20 Samsung Semiconductors & Telecommunications Co., Ltd. Precharge system in a SRAM

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (ja) * 1981-07-08 1983-01-19 Toshiba Corp 半導体装置
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
JPS62136919A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp ドライバ−回路
JPS643896A (en) * 1987-06-24 1989-01-09 Mitsubishi Electric Corp Semiconductor dynamic ram
JPS6457495A (en) * 1987-08-28 1989-03-03 Hitachi Ltd Semiconductor memory device
DE3776798D1 (de) * 1987-11-23 1992-03-26 Philips Nv Schnell arbeitender statischer ram-speicher mit grosser kapazitaet.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147756A (en) * 1983-09-12 1985-05-15 Hitachi Ltd Semiconductor memory device
GB2159359A (en) * 1984-04-28 1985-11-27 Mitsubishi Electric Corp Semiconductor static memory device
US4636982A (en) * 1984-05-04 1987-01-13 Fujitsu Limited Semiconductor memory device
EP0257680A1 (en) * 1986-08-27 1988-03-02 Koninklijke Philips Electronics N.V. Integrated memory circuit utilizing block selection
US4972373A (en) * 1986-12-30 1990-11-20 Samsung Semiconductors & Telecommunications Co., Ltd. Precharge system in a SRAM

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0733981A3 (en) * 1995-01-19 1998-09-16 Texas Instruments Incorporated Digital signal processing method and apparatus and memory cell reading method
GB2314654A (en) * 1996-06-29 1998-01-07 Hyundai Electronics Ind A method for distributing banks in a semiconductor memory device
GB2314654B (en) * 1996-06-29 2000-11-01 Hyundai Electronics Ind Method for distributing banks in semiconductor memory device
US6209056B1 (en) 1996-06-29 2001-03-27 Hyundai Electronics Industries Co., Ltd. Semiconductor memory device having a plurality of bank sections distributed in a plurality of divided memory cell arrays
GB2331607A (en) * 1997-11-21 1999-05-26 Samsung Electronics Co Ltd A semiconductor memory device having pads effectively disposed in the interior
US6069812A (en) * 1997-11-21 2000-05-30 Samsung Electronics Co., Ltd. Integrated circuit memory devices including rows of pads extending parallel to the short sides of the integrated circuit
GB2331607B (en) * 1997-11-21 2001-09-12 Samsung Electronics Co Ltd A semiconductor memory device having pads effectively disposed in the interior

Also Published As

Publication number Publication date
ITMI921988A0 (it) 1992-08-13
JPH0713868B2 (ja) 1995-02-15
US5327389A (en) 1994-07-05
JPH05198164A (ja) 1993-08-06
DE4226825C2 (de) 1997-05-15
DE4226825A1 (de) 1993-02-18
ITMI921988A1 (it) 1994-02-13
KR930005025A (ko) 1993-03-23
FR2680428B1 (fr) 1995-05-19
GB9217372D0 (en) 1992-09-30
TW220010B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-02-01
FR2680428A1 (fr) 1993-02-19
IT1256055B (it) 1995-11-23
KR950004853B1 (ko) 1995-05-15

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)