IT1191561B - Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente - Google Patents
Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamenteInfo
- Publication number
- IT1191561B IT1191561B IT83623/86A IT8362386A IT1191561B IT 1191561 B IT1191561 B IT 1191561B IT 83623/86 A IT83623/86 A IT 83623/86A IT 8362386 A IT8362386 A IT 8362386A IT 1191561 B IT1191561 B IT 1191561B
- Authority
- IT
- Italy
- Prior art keywords
- door
- memory device
- floating gate
- electrically alterable
- semiconductor non
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT83623/86A IT1191561B (it) | 1986-06-03 | 1986-06-03 | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
US07/054,712 US4823175A (en) | 1986-06-03 | 1987-05-27 | Electrically alterable, nonvolatile floating gate memory device |
EP87830204A EP0256993B1 (en) | 1986-06-03 | 1987-05-29 | Electrically alterable, nonvolatile, floating gate memory device |
JP62132028A JPH0810727B2 (ja) | 1986-06-03 | 1987-05-29 | 電気的に変更できる持久記憶浮動ゲ−トメモリデバイス |
DE8787830204T DE3768176D1 (de) | 1986-06-03 | 1987-05-29 | Elektrisch veraenderbare nichtfluechtige speichereinrichtung mit schwebendem tor. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT83623/86A IT1191561B (it) | 1986-06-03 | 1986-06-03 | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8683623A0 IT8683623A0 (it) | 1986-06-03 |
IT1191561B true IT1191561B (it) | 1988-03-23 |
Family
ID=11323290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT83623/86A IT1191561B (it) | 1986-06-03 | 1986-06-03 | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
Country Status (5)
Country | Link |
---|---|
US (1) | US4823175A (it) |
EP (1) | EP0256993B1 (it) |
JP (1) | JPH0810727B2 (it) |
DE (1) | DE3768176D1 (it) |
IT (1) | IT1191561B (it) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5020030A (en) * | 1988-10-31 | 1991-05-28 | Huber Robert J | Nonvolatile SNOS memory cell with induced capacitor |
EP0393737B1 (en) * | 1989-03-31 | 1995-06-07 | Koninklijke Philips Electronics N.V. | Electrically-programmable semiconductor memories |
DE69428658T2 (de) * | 1993-11-30 | 2002-06-20 | Kabushiki Kaisha Toshiba, Kawasaki | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung |
US5550072A (en) * | 1994-08-30 | 1996-08-27 | National Semiconductor Corporation | Method of fabrication of integrated circuit chip containing EEPROM and capacitor |
US5498560A (en) * | 1994-09-16 | 1996-03-12 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
US5877054A (en) * | 1995-06-29 | 1999-03-02 | Sharp Kabushiki Kaisha | Method of making nonvolatile semiconductor memory |
EP0752721B1 (en) * | 1995-06-29 | 2009-04-29 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory and driving method and fabrication method of the same |
JP3366173B2 (ja) * | 1995-07-31 | 2003-01-14 | シャープ株式会社 | 不揮発性半導体メモリの製造方法 |
US5844269A (en) * | 1996-07-02 | 1998-12-01 | National Semiconductor Corporation | EEPROM cell having reduced capacitance across the layer of tunnel oxide |
JPH10242434A (ja) * | 1997-02-26 | 1998-09-11 | Toshiba Corp | 半導体集積回路装置及びフラッシュeeprom |
IT1294312B1 (it) * | 1997-08-07 | 1999-03-24 | Sgs Thomson Microelectronics | Processo per la fabbricazione di un dispositivo di memoria non volatile programmabile elettricamente |
TW351852B (en) * | 1997-10-20 | 1999-02-01 | United Semicondutor Corp | Process for manufacturing flash memory cell structure |
US6023085A (en) * | 1997-12-18 | 2000-02-08 | Advanced Micro Devices, Inc. | Core cell structure and corresponding process for NAND-type high performance flash memory device |
EP1071134A1 (en) | 1999-07-22 | 2001-01-24 | STMicroelectronics S.r.l. | Process for manufacturing an electronic device comprising EEPROM memory cells with dimensional control of the floating gate regions |
JP2002026151A (ja) * | 2000-07-05 | 2002-01-25 | Mitsubishi Electric Corp | 半導体メモリ装置 |
KR100518577B1 (ko) * | 2003-05-26 | 2005-10-04 | 삼성전자주식회사 | 원 타임 프로그래머블 메모리 소자 및 이를 포함하는반도체 집적회로와 그 제조방법 |
US7262095B1 (en) * | 2005-06-07 | 2007-08-28 | Spansion Llc | System and method for reducing process-induced charging |
KR100731058B1 (ko) * | 2005-12-26 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 이중 터널 산화막을 포함하는 플래시 메모리 셀 및 그 제조방법 |
US7825479B2 (en) * | 2008-08-06 | 2010-11-02 | International Business Machines Corporation | Electrical antifuse having a multi-thickness dielectric layer |
CN102709288B (zh) * | 2012-05-18 | 2016-03-30 | 电子科技大学 | 一种总剂量辐射加固的半导体存储器 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4288256A (en) * | 1977-12-23 | 1981-09-08 | International Business Machines Corporation | Method of making FET containing stacked gates |
US4498095A (en) * | 1978-05-02 | 1985-02-05 | International Business Machines Corporation | Semiconductor structure with improved isolation between two layers of polycrystalline silicon |
WO1980001122A1 (en) * | 1978-11-27 | 1980-05-29 | Ncr Co | Semiconductor memory device |
US4409723A (en) * | 1980-04-07 | 1983-10-18 | Eliyahou Harari | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
US4458262A (en) * | 1980-05-27 | 1984-07-03 | Supertex, Inc. | CMOS Device with ion-implanted channel-stop region and fabrication method therefor |
DE3032333A1 (de) * | 1980-08-27 | 1982-04-22 | Siemens AG, 1000 Berlin und 8000 München | Monolithische statische speicherzelle und verfahren zu ihrem betrieb |
DE3273867D1 (en) * | 1981-07-27 | 1986-11-20 | Xerox Corp | Field effect transistor |
JPS58115856A (ja) * | 1981-12-28 | 1983-07-09 | Nec Home Electronics Ltd | 半導体装置 |
US4477825A (en) * | 1981-12-28 | 1984-10-16 | National Semiconductor Corporation | Electrically programmable and erasable memory cell |
JPS59500342A (ja) * | 1982-03-09 | 1984-03-01 | ア−ルシ−エ− コ−ポレ−シヨン | 電気的に改変可能の不揮発性浮動ゲ−ト記憶装置 |
US4590504A (en) * | 1982-12-28 | 1986-05-20 | Thomson Components - Mostek Corporation | Nonvolatile MOS memory cell with tunneling element |
JPS60130161A (ja) * | 1983-12-16 | 1985-07-11 | Fujitsu Ltd | スタテイツクメモリセル |
IT1213218B (it) * | 1984-09-25 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto. |
JPS61194877A (ja) * | 1985-02-25 | 1986-08-29 | Nec Corp | 絶縁ゲ−ト型不揮発性半導体メモリ |
JPS61228672A (ja) * | 1985-04-02 | 1986-10-11 | Nec Corp | 絶縁ゲ−ト型不揮発性半導体メモリ及びその製造方法 |
-
1986
- 1986-06-03 IT IT83623/86A patent/IT1191561B/it active
-
1987
- 1987-05-27 US US07/054,712 patent/US4823175A/en not_active Expired - Lifetime
- 1987-05-29 EP EP87830204A patent/EP0256993B1/en not_active Expired
- 1987-05-29 JP JP62132028A patent/JPH0810727B2/ja not_active Expired - Fee Related
- 1987-05-29 DE DE8787830204T patent/DE3768176D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
IT8683623A0 (it) | 1986-06-03 |
DE3768176D1 (de) | 1991-04-04 |
US4823175A (en) | 1989-04-18 |
EP0256993A1 (en) | 1988-02-24 |
JPH0810727B2 (ja) | 1996-01-31 |
EP0256993B1 (en) | 1991-02-27 |
JPS62291180A (ja) | 1987-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1191566B (it) | Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione | |
IT1191561B (it) | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente | |
DE3855735D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
DE68918880D1 (de) | Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung. | |
DE69227011D1 (de) | Löschbare Halbleiterspeicheranordnung mit verbesserter Zuverlässigkeit | |
DE68926811D1 (de) | Halbleiterspeicheranordnung | |
NL191814C (nl) | Halfgeleidergeheugeninrichting. | |
KR860004469A (ko) | 메모리를 내장한 반도체 집적회로 장치 | |
KR880004487A (ko) | 불 휘발성 반도체 기억장치 | |
DE68923505D1 (de) | Halbleiterspeicheranordnung. | |
DE3889097D1 (de) | Halbleiterspeicheranordnung. | |
KR860005441A (ko) | 반도체기억장치 | |
IT1163140B (it) | Dispositivo di memoria non volatile,a porta non elettricamemnte collegata,alterabile elettricamente | |
KR860005375A (ko) | 개량된 기입확인 동작 반도체 메모리장치 | |
DE3584362D1 (de) | Nichtfluechtige halbleiterspeicheranordnung mit schreibeschaltung. | |
DE68918367D1 (de) | Halbleiterspeicheranordnung. | |
DE3585733D1 (de) | Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration. | |
KR860004478A (ko) | 반도체 메모리 장치 | |
DE3883865D1 (de) | Halbleiterspeicheranordnung mit einem Register. | |
KR860003606A (ko) | 반도체 메모리 장치 | |
DE68923588D1 (de) | Halbleiterspeicheranordnung. | |
DE3853038D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung. | |
DE68924080D1 (de) | Halbleiterspeichervorrichtung. | |
DE3789783D1 (de) | Halbleiterspeicheranordnung. | |
DE3587457D1 (de) | Halbleiterspeichereinrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970628 |