IL159762A0 - Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility - Google Patents

Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Info

Publication number
IL159762A0
IL159762A0 IL15976202A IL15976202A IL159762A0 IL 159762 A0 IL159762 A0 IL 159762A0 IL 15976202 A IL15976202 A IL 15976202A IL 15976202 A IL15976202 A IL 15976202A IL 159762 A0 IL159762 A0 IL 159762A0
Authority
IL
Israel
Prior art keywords
cleaning
cleaning compositions
ammonia
improved substrate
free alkaline
Prior art date
Application number
IL15976202A
Other languages
English (en)
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of IL159762A0 publication Critical patent/IL159762A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
IL15976202A 2001-07-09 2002-07-08 Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility IL159762A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30403601P 2001-07-09 2001-07-09
PCT/US2002/021375 WO2003006598A1 (en) 2001-07-09 2002-07-08 Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Publications (1)

Publication Number Publication Date
IL159762A0 true IL159762A0 (en) 2004-06-20

Family

ID=23174755

Family Applications (2)

Application Number Title Priority Date Filing Date
IL15976202A IL159762A0 (en) 2001-07-09 2002-07-08 Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
IL159762A IL159762A (en) 2001-07-09 2004-01-07 Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL159762A IL159762A (en) 2001-07-09 2004-01-07 Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Country Status (22)

Country Link
US (1) US20040220065A1 (pl)
EP (1) EP1404797B1 (pl)
JP (2) JP4256258B2 (pl)
KR (1) KR101009550B1 (pl)
CN (1) CN100410359C (pl)
AT (1) ATE355356T1 (pl)
AU (1) AU2002326341A1 (pl)
BR (1) BR0210888A (pl)
CA (1) CA2452885C (pl)
DE (1) DE60218468T2 (pl)
DK (1) DK1404797T3 (pl)
ES (1) ES2282453T3 (pl)
IL (2) IL159762A0 (pl)
IN (1) IN2004CH00044A (pl)
MY (1) MY131912A (pl)
NO (1) NO20040068L (pl)
PL (1) PL199523B1 (pl)
PT (1) PT1404797E (pl)
RS (1) RS51832B (pl)
TW (1) TWI262946B (pl)
WO (1) WO2003006598A1 (pl)
ZA (1) ZA200400067B (pl)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
US20040220066A1 (en) * 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
US7442675B2 (en) * 2003-06-18 2008-10-28 Tokyo Ohka Kogyo Co., Ltd. Cleaning composition and method of cleaning semiconductor substrate
US6930017B2 (en) 2003-08-21 2005-08-16 Micron Technology, Inc. Wafer Cleaning method and resulting wafer
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
KR100593668B1 (ko) 2004-01-20 2006-06-28 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
KR101166002B1 (ko) * 2004-02-09 2012-07-18 미쓰비시 가가꾸 가부시키가이샤 반도체 디바이스용 기판 세정액 및 세정방법
US7498295B2 (en) 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
JP4390616B2 (ja) 2004-04-27 2009-12-24 Ｎｅｃエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
WO2006056298A1 (en) * 2004-11-25 2006-06-01 Basf Aktiengesellschaft Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
JP5600376B2 (ja) * 2005-01-27 2014-10-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体基材の処理のための組成物
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
KR20060108436A (ko) * 2005-04-13 2006-10-18 매그나칩 반도체 유한회사 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법
JP4667147B2 (ja) * 2005-07-15 2011-04-06 株式会社トクヤマ 基板洗浄液
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
KR100770217B1 (ko) * 2006-06-12 2007-10-26 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 범프 전극의형성 방법
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
MY145938A (en) * 2007-02-14 2012-05-31 Avantor Performance Mat Inc Peroxide activated oxometalate based formulations for removal of etch residue
JP4848504B2 (ja) * 2007-03-14 2011-12-28 公益財団法人新産業創造研究機構 セラミックス基板又は無機耐熱性基板の洗浄方法及びこれを用いた素子の製造方法並びに素子
KR20100051839A (ko) * 2007-08-02 2010-05-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물
KR100900341B1 (ko) 2007-08-21 2009-06-02 (주)켐넥스 액정 표시 패널 세정제
ES2386692T3 (es) * 2007-11-13 2012-08-27 Sachem, Inc. Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños
JP5412722B2 (ja) * 2007-11-27 2014-02-12 富士通株式会社 電子装置の製造方法
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅の洗浄及び保護配合物
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
CN101735903B (zh) * 2008-11-04 2012-02-01 江阴市润玛电子材料有限公司 一种太阳能光伏专用电子清洗剂
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
AU2010218275A1 (en) 2009-02-25 2011-10-20 Avantor Performance Materials, Inc. Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8309502B2 (en) 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
US8298751B2 (en) 2009-11-02 2012-10-30 International Business Machines Corporation Alkaline rinse agents for use in lithographic patterning
DE102010006099A1 (de) * 2010-01-28 2011-08-18 EXCOR Korrosionsforschung GmbH, 01067 Zusammensetzungen von Dampfphasen-Korrosionsinhibitoren, Verfahren zu deren Herstellung und deren Verwendung für den temporären Korrosionsschutz
JP5508130B2 (ja) * 2010-05-14 2014-05-28 富士フイルム株式会社 洗浄組成物、半導体装置の製造方法及び洗浄方法
CN101838111B (zh) * 2010-05-20 2012-06-27 合肥茂丰电子科技有限公司 玻璃基板蚀刻液及其制备方法
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
TWI619800B (zh) 2010-10-06 2018-04-01 恩特葛瑞斯股份有限公司 選擇性蝕刻金屬氮化物之組成物及方法
US8889609B2 (en) 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
JP6066552B2 (ja) * 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
CN102662312A (zh) * 2012-04-20 2012-09-12 陕西科技大学 一种金属基印刷ps 版上预感光涂层的清洗液及清洗方法
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6203525B2 (ja) 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
CN103336412B (zh) * 2013-07-03 2017-02-08 北京科华微电子材料有限公司 一种新型的光刻胶剥离液及其应用工艺
EP3093875A4 (en) 2014-04-10 2017-03-08 Mitsubishi Gas Chemical Company, Inc. Liquid composition for semiconductor element cleaning and method for cleaning semiconductor element
KR102405063B1 (ko) * 2014-06-30 2022-06-07 엔테그리스, 아이엔씨. 텅스텐 및 코발트 상용성을 갖는 에치후 잔류물을 제거하기 위한 수성 및 반-수성 세정제
TWI783640B (zh) * 2016-03-01 2022-11-11 日商東京應化工業股份有限公司 半導體基板或裝置之洗淨液
US11353794B2 (en) * 2017-12-22 2022-06-07 Versum Materials Us, Llc Photoresist stripper
CN109962015B (zh) * 2017-12-22 2021-11-02 长鑫存储技术有限公司 用于改善铜线短路的制程工艺
CN114269893A (zh) * 2019-08-30 2022-04-01 陶氏环球技术有限责任公司 光刻胶剥离组合物
KR20220012521A (ko) 2020-07-23 2022-02-04 주식회사 케이씨텍 세정액 조성물 및 이를 이용한 세정 방법

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
JP3160344B2 (ja) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
AU2494092A (en) * 1992-09-03 1994-03-29 Circuit Chemical Products Gmbh Cleaning-agent mixture for cleaning printed circuits and a method of cleaning such circuits
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
JP3422117B2 (ja) * 1994-01-28 2003-06-30 和光純薬工業株式会社 新規な表面処理方法及び処理剤
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
US5855811A (en) * 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US5989353A (en) * 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5709756A (en) * 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
WO1998030667A1 (en) * 1997-01-09 1998-07-16 Advanced Technology Materials, Inc. Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
US6211126B1 (en) * 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
US6225030B1 (en) * 1998-03-03 2001-05-01 Tokyo Ohka Kogyo Co., Ltd. Post-ashing treating method for substrates
US6432209B2 (en) * 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
DE69941088D1 (de) * 1998-05-18 2009-08-20 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
US6043005A (en) * 1998-06-03 2000-03-28 Haq; Noor Polymer remover/photoresist stripper
US6103680A (en) * 1998-12-31 2000-08-15 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues
US6248704B1 (en) * 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
JP3372903B2 (ja) * 1999-06-21 2003-02-04 ニチゴー・モートン株式会社 フォトレジスト剥離剤
JP3410403B2 (ja) * 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
JP4283952B2 (ja) * 1999-10-12 2009-06-24 多摩化学工業株式会社 非鉄金属洗浄用洗浄液組成物
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6417147B2 (en) * 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
WO2002045148A2 (de) * 2000-11-29 2002-06-06 Infineon Technologies Ag Reinigungslösung für halbleiterscheiben im beol-bereich
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
US6916772B2 (en) * 2001-07-13 2005-07-12 Ekc Technology, Inc. Sulfoxide pyrolid(in)one alkanolamine cleaner composition
US7393819B2 (en) * 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Also Published As

Publication number Publication date
ATE355356T1 (de) 2006-03-15
JP2009081445A (ja) 2009-04-16
JP2004536910A (ja) 2004-12-09
US20040220065A1 (en) 2004-11-04
ZA200400067B (en) 2004-11-18
EP1404797B1 (en) 2007-02-28
KR20040018438A (ko) 2004-03-03
JP4753986B2 (ja) 2011-08-24
CN1656206A (zh) 2005-08-17
CA2452885C (en) 2011-09-13
EP1404797A1 (en) 2004-04-07
TWI262946B (en) 2006-10-01
WO2003006598A1 (en) 2003-01-23
MY131912A (en) 2007-09-28
IL159762A (en) 2006-12-31
CA2452885A1 (en) 2003-01-23
NO20040068L (no) 2004-03-09
AU2002326341A1 (en) 2003-01-29
BR0210888A (pt) 2004-06-22
JP4256258B2 (ja) 2009-04-22
RS51832B (en) 2012-02-29
NO20040068D0 (no) 2004-01-08
DE60218468D1 (de) 2007-04-12
PL199523B1 (pl) 2008-09-30
IN2004CH00044A (pl) 2005-12-02
DE60218468T2 (de) 2007-11-15
PL367434A1 (pl) 2005-02-21
KR101009550B1 (ko) 2011-01-18
CN100410359C (zh) 2008-08-13
ES2282453T3 (es) 2007-10-16
PT1404797E (pt) 2007-04-30
DK1404797T3 (da) 2007-06-11
RS1204A (en) 2007-02-05

Similar Documents

Publication Publication Date Title
TWI262946B (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
MY143399A (en) Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
IL159761A0 (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
AU2003286584A1 (en) Aqueous phosphoric acid compositions for cleaning semiconductor devices
WO2003032084A3 (en) Low viscosity precursor compositions and methods for the deposition of conductive electronic features
KR20050019103A (ko) 산화제 및 유기 용매를 포함하는 마이크로일렉트로닉 세정조성물
TW200730669A (en) Electroplating composition intended for coating a surface of a substrate with a metal
TW200502423A (en) Vapor deposition of benzotriazole (BTA) for protecting copper interconnects
TW200634450A (en) Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
WO2003106011A3 (en) PROCESS FOR PRODUCING ORGANOMETALLIC COMPOUNDS
TW200504164A (en) Composition for forming porous film and method for forming the same, porous film and method for forming the same, interlevel insulator film, and semiconductor device
TH65770A (th) สารผสมทำความสะอาดไมโครอิเล็กโทรนิคที่เป็นด่างที่ปราศจากแอมโมเนียด้วยความเข้ากันได้กับซับสเทรทที่ปรับปรุง
CN113430066A (zh) 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
JP2010122287A (ja) フェニルジケトン誘導体を含有する防食剤又は剥離剤。
JP2010121147A (ja) オキシインドール化合物を含有する防食剤又はレジスト剥離剤。
TW200611073A (en) Method using T-shaped photoresist patterns to form reduced wiring figures

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed