IL156978A0 - Carburetor, various types of devices using the carburetor, and method of vaporization - Google Patents

Carburetor, various types of devices using the carburetor, and method of vaporization

Info

Publication number
IL156978A0
IL156978A0 IL15697802A IL15697802A IL156978A0 IL 156978 A0 IL156978 A0 IL 156978A0 IL 15697802 A IL15697802 A IL 15697802A IL 15697802 A IL15697802 A IL 15697802A IL 156978 A0 IL156978 A0 IL 156978A0
Authority
IL
Israel
Prior art keywords
gas
vaporization
carburetor
carrier gas
gas passage
Prior art date
Application number
IL15697802A
Other languages
English (en)
Original Assignee
Watanabe M & Co Ltd
Toda Masayuki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watanabe M & Co Ltd, Toda Masayuki filed Critical Watanabe M & Co Ltd
Publication of IL156978A0 publication Critical patent/IL156978A0/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
    • B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
    • B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B01F23/21—Mixing gases with liquids by introducing liquids into gaseous media
    • B01F23/213—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
    • B01F25/433—Mixing tubes wherein the shape of the tube influences the mixing, e.g. mixing tubes with varying cross-section or provided with inwardly extending profiles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
    • B01F25/433—Mixing tubes wherein the shape of the tube influences the mixing, e.g. mixing tubes with varying cross-section or provided with inwardly extending profiles
    • B01F25/4336—Mixers with a diverging cross-section
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
    • B01F25/434—Mixing tubes comprising cylindrical or conical inserts provided with grooves or protrusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/44—Mixers in which the components are pressed through slits
    • B01F25/441—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits
    • B01F25/4416—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits the opposed surfaces being provided with grooves
    • B01F25/44163—Helical grooves formed on opposed surfaces, e.g. on cylinders or cones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/44—Mixers in which the components are pressed through slits
    • B01F25/441—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits
    • B01F25/4416—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits the opposed surfaces being provided with grooves
    • B01F25/44167—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits the opposed surfaces being provided with grooves the grooves being formed on the outer surface of the cylindrical or conical core of the slits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B01D3/34—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping with one or more auxiliary substances
    • B01D3/343—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping with one or more auxiliary substances the substance being a gas
    • B01D3/346—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping with one or more auxiliary substances the substance being a gas the gas being used for removing vapours, e.g. transport gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S261/00—Gas and liquid contact apparatus
    • Y10S261/65—Vaporizers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Means For Warming Up And Starting Carburetors (AREA)
IL15697802A 2001-01-18 2002-01-18 Carburetor, various types of devices using the carburetor, and method of vaporization IL156978A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001010827 2001-01-18
JP2001392833 2001-11-18
PCT/JP2002/000330 WO2002058141A1 (fr) 2001-01-18 2002-01-18 Carburateur, dispositifs de divers types utilisant ce carburateur et procede de vaporisation

Publications (1)

Publication Number Publication Date
IL156978A0 true IL156978A0 (en) 2004-02-08

Family

ID=26607922

Family Applications (2)

Application Number Title Priority Date Filing Date
IL15697802A IL156978A0 (en) 2001-01-18 2002-01-18 Carburetor, various types of devices using the carburetor, and method of vaporization
IL156978A IL156978A (en) 2001-01-18 2003-07-17 Carburetor, several types of devices that use a carburetor and an evaporation method

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL156978A IL156978A (en) 2001-01-18 2003-07-17 Carburetor, several types of devices that use a carburetor and an evaporation method

Country Status (9)

Country Link
US (2) US7246796B2 (zh)
EP (1) EP1361610B1 (zh)
JP (2) JPWO2002058141A1 (zh)
KR (1) KR100881681B1 (zh)
CN (2) CN1966762B (zh)
AT (1) ATE535940T1 (zh)
IL (2) IL156978A0 (zh)
TW (1) TW560029B (zh)
WO (1) WO2002058141A1 (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2002058141A1 (ja) * 2001-01-18 2004-05-27 株式会社渡邊商行 気化器及びそれを用いた各種装置並びに気化方法
JP2003268552A (ja) * 2002-03-18 2003-09-25 Watanabe Shoko:Kk 気化器及びそれを用いた各種装置並びに気化方法
JP4391413B2 (ja) * 2002-05-29 2009-12-24 株式会社渡辺商行 気化器、分散器、成膜装置、及び、気化方法
JP2005012134A (ja) * 2003-06-20 2005-01-13 Watanabe Shoko:Kk 気化方法及び気化器
JP2005072196A (ja) * 2003-08-22 2005-03-17 Watanabe Shoko:Kk 薄膜成膜装置
JP2005072194A (ja) * 2003-08-22 2005-03-17 Watanabe Shoko:Kk 気化器用分散器、この気化器用分散器を用いたｍｏｃｖｄ用気化器、これら気化器用分散器若しくはｍｏｃｖｄ用気化器に用いられるロッド、及びキャリアガスの分散方法並びにキャリアガスの気化方法
JP4399517B2 (ja) * 2004-01-05 2010-01-20 株式会社堀場製作所 成膜装置と成膜方法
GB0407114D0 (en) 2004-03-30 2004-05-05 Colormatrix Europe Ltd Polymer additives and methods of use thereof
US7883745B2 (en) 2007-07-30 2011-02-08 Micron Technology, Inc. Chemical vaporizer for material deposition systems and associated methods
JP5141141B2 (ja) * 2007-08-23 2013-02-13 東京エレクトロン株式会社 気化器、気化器を用いた原料ガス供給システム及びこれを用いた成膜装置
JP5104151B2 (ja) 2007-09-18 2012-12-19 東京エレクトロン株式会社 気化装置、成膜装置、成膜方法及び記憶媒体
JP2008219026A (ja) * 2008-03-31 2008-09-18 Watanabe Shoko:Kk 原料溶液の気化方法
PL2110420T3 (pl) * 2008-04-11 2011-03-31 Sika Tech Ag Sposób nanoszenia na podłoże zestawu zwiększającego przyczepność
JP5614935B2 (ja) * 2009-02-03 2014-10-29 株式会社渡辺商行 気化器、この気化器を用いたｍｏｃｖｄ用気化器、これら気化器若しくはｍｏｃｖｄ用気化器に用いられるセンターロッド、及びキャリアガスの分
US8758515B2 (en) 2010-08-09 2014-06-24 Rohm And Haas Electronic Materials Llc Delivery device and method of use thereof
KR101881617B1 (ko) 2010-12-21 2018-07-24 가부시키가이샤 와타나베 쇼코 기화기
JP5993363B2 (ja) 2011-02-28 2016-09-14 株式会社渡辺商行 気化器および気化方法
US8776821B2 (en) 2011-05-24 2014-07-15 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US8997775B2 (en) 2011-05-24 2015-04-07 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US20150211106A1 (en) * 2014-01-30 2015-07-30 Areesys Corporation Apparatus for depositing thin films of organic materials
US20160100631A1 (en) * 2014-10-11 2016-04-14 Michael Debono Temperature control of electronic vaporizers
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
KR101949030B1 (ko) * 2017-08-24 2019-05-08 주식회사 메카로 투룸형 기화기
US10927459B2 (en) 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition
CN110643975B (zh) * 2018-06-27 2021-09-28 东北大学 一种金属有机化学源液体的蒸发输运装置
WO2020039886A1 (ja) * 2018-08-24 2020-02-27 株式会社堀場エステック 気化器、液体材料気化装置、及び気化方法
WO2020110615A1 (ja) * 2018-11-29 2020-06-04 昭和電工株式会社 原料供給器及びｎ－ビニルカルボン酸アミドの製造方法
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
CN113448172A (zh) * 2020-03-27 2021-09-28 长鑫存储技术有限公司 一种光刻胶涂覆装置及方法
KR20220064034A (ko) * 2020-11-11 2022-05-18 주식회사 엠아이 박막 증착용 기화 장치
CN113913787A (zh) * 2021-10-15 2022-01-11 浙江生波智能装备有限公司 一种新型薄膜制备工艺及真空镀膜设备

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054619A (en) * 1974-02-22 1977-10-18 Coverston George C Atomizing and mixing apparatus
JPS58180017A (ja) 1982-04-15 1983-10-21 Agency Of Ind Science & Technol 半導体薄膜の製造方法
US4847469A (en) * 1987-07-15 1989-07-11 The Boc Group, Inc. Controlled flow vaporizer
US4924936A (en) * 1987-08-05 1990-05-15 M&T Chemicals Inc. Multiple, parallel packed column vaporizer
JPH07106898B2 (ja) * 1988-06-01 1995-11-15 株式会社フジクラ 酸化物系超電導体の製造方法
JPH0784662B2 (ja) * 1989-12-12 1995-09-13 アプライドマテリアルズジャパン株式会社 化学的気相成長方法とその装置
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
JP2904958B2 (ja) * 1991-06-20 1999-06-14 松下電器産業株式会社 酸化タンタル薄膜製造装置
JPH06291040A (ja) * 1992-03-03 1994-10-18 Rintetsuku:Kk 液体気化供給方法と液体気化供給器
EP0602595B1 (en) * 1992-12-15 1997-07-23 Applied Materials, Inc. Vaporizing reactant liquids for CVD
JPH0754151A (ja) 1993-08-19 1995-02-28 Matsushita Electric Ind Co Ltd 薄膜の形成方法及びその形成装置
CA2112093C (en) * 1993-12-21 1995-02-21 John A. Burgener Parallel path induction nebulizer
JPH07310185A (ja) 1994-05-12 1995-11-28 Hitachi Ltd Ｃｖｄガス供給装置
JPH08157296A (ja) 1994-12-05 1996-06-18 Fujitsu Ltd 原料またはガスの供給装置
JPH09111456A (ja) * 1995-10-17 1997-04-28 Matsushita Electric Ind Co Ltd 液体原料の供給方法及び供給装置
TW322602B (zh) * 1996-04-05 1997-12-11 Ehara Seisakusho Kk
US6197835B1 (en) * 1996-05-13 2001-03-06 Universidad De Sevilla Device and method for creating spherical particles of uniform size
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
US6010969A (en) * 1996-10-02 2000-01-04 Micron Technology, Inc. Method of depositing films on semiconductor devices by using carboxylate complexes
US6195504B1 (en) * 1996-11-20 2001-02-27 Ebara Corporation Liquid feed vaporization system and gas injection device
DE69826559T2 (de) * 1997-05-16 2005-10-06 Tokyo Electron Ltd. Dampferzeugungsverfahren und Vorrichtung zur Durchführung dieses Verfahren
JP3345803B2 (ja) * 1997-05-16 2002-11-18 東京エレクトロン株式会社 蒸気発生方法及びその装置
US5882416A (en) * 1997-06-19 1999-03-16 Advanced Technology Materials, Inc. Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
JP3913841B2 (ja) * 1997-07-02 2007-05-09 本田技研工業株式会社 噴射弁
US6039074A (en) * 1997-09-09 2000-03-21 Novellus Systems, Inc. Pressure-induced shut-off valve for a liquid delivery system
US6289221B1 (en) 1998-01-20 2001-09-11 Siemens Aktiengesellschaft Mobile radio telephone system
US6296711B1 (en) * 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
JPH11312649A (ja) * 1998-04-30 1999-11-09 Nippon Asm Kk Ｃｖｄ装置
US6210485B1 (en) * 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
US6409837B1 (en) * 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
JP3470055B2 (ja) * 1999-01-22 2003-11-25 株式会社渡邊商行 Ｍｏｃｖｄ用気化器及び原料溶液の気化方法
JP3823591B2 (ja) 1999-03-25 2006-09-20 三菱電機株式会社 Ｃｖｄ原料用気化装置およびこれを用いたｃｖｄ装置
JP3410385B2 (ja) * 1999-04-19 2003-05-26 株式会社ディスコ 洗浄装置及び切削装置
JP4325016B2 (ja) * 1999-05-17 2009-09-02 株式会社豊田中央研究所 噴射ノズル式ミスト発生器および燃料電池用ミスト発生器取付装置
JP2000345345A (ja) 1999-06-04 2000-12-12 Mitsubishi Electric Corp Ｃｖｄ装置およびｃｖｄ装置用気化装置
JP4393677B2 (ja) * 1999-09-14 2010-01-06 株式会社堀場エステック 液体材料気化方法および装置並びに制御バルブ
US6227201B1 (en) 1999-11-05 2001-05-08 Ferko, Iii Joseph G. Immobilization backboard and blank for forming a backboard
US6773687B1 (en) * 1999-11-24 2004-08-10 Tokyo Electron Limited Exhaust apparatus for process apparatus and method of removing impurity gas
US6488272B1 (en) * 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
JPWO2002058141A1 (ja) * 2001-01-18 2004-05-27 株式会社渡邊商行 気化器及びそれを用いた各種装置並びに気化方法
US20030021595A1 (en) * 2001-07-16 2003-01-30 Mindi Xu Apparatus and method for vaporizing a liquid chemical

Also Published As

Publication number Publication date
TW560029B (en) 2003-11-01
CN100595910C (zh) 2010-03-24
EP1361610A1 (en) 2003-11-12
KR20030091968A (ko) 2003-12-03
WO2002058141A1 (fr) 2002-07-25
EP1361610A4 (en) 2007-03-14
EP1361610B1 (en) 2011-11-30
KR100881681B1 (ko) 2009-02-06
US7246796B2 (en) 2007-07-24
CN1966762A (zh) 2007-05-23
JP2008196054A (ja) 2008-08-28
US20080193645A1 (en) 2008-08-14
JPWO2002058141A1 (ja) 2004-05-27
CN1531753A (zh) 2004-09-22
CN1966762B (zh) 2015-01-21
IL156978A (en) 2008-03-20
US20040113289A1 (en) 2004-06-17
ATE535940T1 (de) 2011-12-15
JP4986163B2 (ja) 2012-07-25
US7673856B2 (en) 2010-03-09

Similar Documents

Publication Publication Date Title
IL156978A0 (en) Carburetor, various types of devices using the carburetor, and method of vaporization
TW351749B (en) System for the treatment of chemical wastes and method for treating chemical wastes
MY103877A (en) Thermal decomposition furnace
NZ527088A (en) Humidifier with structure to prevent backflow of liquid through the humidifier inlet
EA201000295A1 (ru) Горелка для концентрата
US6530977B2 (en) Abatement of semiconductor processing gases
WO2003006075A1 (en) Production of hydrogen peroxide vapor-air mixtures
TW592286U (en) Apparatus for the partial oxidation of hydrogen sulphide, and burner for use in said apparatus
BR0208633A (pt) Aparelho de granulação de leito fluido
GB0100198D0 (en) Nozzle intended for the concentrated distribution of a fluid loaded with solid particles,
GB2386410A (en) Apparatus and method for producing ash
ES2190000T3 (es) Procedimiento para la obtencion de polvo de hierro que contiene silicio.
JP3792369B2 (ja) 熱処理用雰囲気発生装置
DE602006007244D1 (de) Vorrichtung zur herstellung von synthesegas
SI1323809T1 (sl) Sotočni jaškasti reaktor
EP1312861A3 (de) Abluftreinigungsvorrichtung
TW200630497A (en) Device for the tempered storage of a container
TW242119B (zh)
EP0943740A3 (de) Sanitäres Mischventil
JP2003163168A (ja) 液体材料気化装置
JP4063601B2 (ja) 試料供給装置付き気化器
US2515462A (en) Soldering iron
JP4223162B2 (ja) ガス減温装置
US310945A (en) Island
JP2005328085A5 (zh)

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed