HUP0302668A2 - Eljárás volfrám egykristály előállítására - Google Patents
Eljárás volfrám egykristály előállításáraInfo
- Publication number
- HUP0302668A2 HUP0302668A2 HU0302668A HUP0302668A HUP0302668A2 HU P0302668 A2 HUP0302668 A2 HU P0302668A2 HU 0302668 A HU0302668 A HU 0302668A HU P0302668 A HUP0302668 A HU P0302668A HU P0302668 A2 HUP0302668 A2 HU P0302668A2
- Authority
- HU
- Hungary
- Prior art keywords
- single crystal
- tungsten
- carbonates
- oxides
- metal oxides
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 title 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 4
- 229910052721 tungsten Inorganic materials 0.000 abstract 4
- 239000010937 tungsten Substances 0.000 abstract 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract 4
- 150000004649 carbonic acid derivatives Chemical class 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract 3
- 150000004706 metal oxides Chemical class 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001212336 | 2001-07-12 | ||
| PCT/JP2002/006607 WO2003008676A1 (fr) | 2001-07-12 | 2002-06-28 | Procede pour preparer un monocristal de tungstate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HUP0302668A2 true HUP0302668A2 (hu) | 2003-12-29 |
Family
ID=19047514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HU0302668A HUP0302668A2 (hu) | 2001-07-12 | 2002-06-28 | Eljárás volfrám egykristály előállítására |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP4037362B2 (ru) |
| CN (1) | CN1274887C (ru) |
| CZ (1) | CZ300221B6 (ru) |
| HU (1) | HUP0302668A2 (ru) |
| RU (1) | RU2241081C2 (ru) |
| WO (1) | WO2003008676A1 (ru) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4639711B2 (ja) * | 2004-09-15 | 2011-02-23 | 日立化成工業株式会社 | 無機シンチレータ及びその製造方法 |
| CN100395380C (zh) * | 2006-04-21 | 2008-06-18 | 北京工业大学 | 提高稀土离子掺杂浓度的钨酸钡单晶制备工艺 |
| CN100364896C (zh) * | 2006-08-17 | 2008-01-30 | 同济大学 | 一种钨酸汞的制备方法 |
| CN100398701C (zh) * | 2006-09-15 | 2008-07-02 | 嘉兴学院 | 晶体生长原料处理方法 |
| CN104671285B (zh) * | 2015-01-28 | 2016-08-03 | 洛阳理工学院 | 一种钼酸镉纳米棒的制备方法 |
| CN106007713A (zh) * | 2016-07-08 | 2016-10-12 | 天津大学 | 一种高品质因数钨酸钙系微波介质陶瓷 |
| CN115537912A (zh) * | 2022-10-24 | 2022-12-30 | 福建福晶科技股份有限公司 | 一种消除晶体体发热的kgw晶体制备方法及得到的晶体 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57100999A (en) * | 1980-12-15 | 1982-06-23 | Hitachi Chem Co Ltd | Heat treatment of single crystal of tungstic acid compound |
| JPS60103100A (ja) * | 1983-11-08 | 1985-06-07 | Toshiba Corp | シンチレ−タ単結晶の熱処理方法 |
| JPH10291898A (ja) * | 1997-04-22 | 1998-11-04 | Furukawa Co Ltd | タングステン酸鉛単結晶 |
-
2002
- 2002-06-28 CZ CZ20030724A patent/CZ300221B6/cs not_active IP Right Cessation
- 2002-06-28 WO PCT/JP2002/006607 patent/WO2003008676A1/ja active Application Filing
- 2002-06-28 CN CNB02802513XA patent/CN1274887C/zh not_active Expired - Fee Related
- 2002-06-28 RU RU2003107559/15A patent/RU2241081C2/ru not_active IP Right Cessation
- 2002-06-28 JP JP2003514986A patent/JP4037362B2/ja not_active Expired - Fee Related
- 2002-06-28 HU HU0302668A patent/HUP0302668A2/hu unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP4037362B2 (ja) | 2008-01-23 |
| JPWO2003008676A1 (ja) | 2004-11-11 |
| CN1274887C (zh) | 2006-09-13 |
| CN1464920A (zh) | 2003-12-31 |
| RU2241081C2 (ru) | 2004-11-27 |
| WO2003008676A1 (fr) | 2003-01-30 |
| CZ300221B6 (cs) | 2009-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD9A | Lapse of provisional protection due to non-payment of fees |