HK1095207A1 - Process for fabricating semiconductor device - Google Patents

Process for fabricating semiconductor device

Info

Publication number
HK1095207A1
HK1095207A1 HK07102409.4A HK07102409A HK1095207A1 HK 1095207 A1 HK1095207 A1 HK 1095207A1 HK 07102409 A HK07102409 A HK 07102409A HK 1095207 A1 HK1095207 A1 HK 1095207A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Application number
HK07102409.4A
Other languages
English (en)
Inventor
Toshio Kudo
Bunji Mizuno
Yuichiro Sasaki
Cheng-Guo Jin
Original Assignee
Sumitomo Heavy Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries filed Critical Sumitomo Heavy Industries
Publication of HK1095207A1 publication Critical patent/HK1095207A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Thin Film Transistor (AREA)
  • Lasers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
HK07102409.4A 2003-06-02 2007-03-05 Process for fabricating semiconductor device HK1095207A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003156769A JP4589606B2 (ja) 2003-06-02 2003-06-02 半導体装置の製造方法
PCT/JP2004/007606 WO2004109783A1 (ja) 2003-06-02 2004-06-02 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
HK1095207A1 true HK1095207A1 (en) 2007-04-27

Family

ID=33508330

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07102409.4A HK1095207A1 (en) 2003-06-02 2007-03-05 Process for fabricating semiconductor device

Country Status (8)

Country Link
US (1) US7932185B2 (zh)
EP (1) EP1648023A4 (zh)
JP (1) JP4589606B2 (zh)
KR (1) KR100718976B1 (zh)
CN (1) CN100426464C (zh)
HK (1) HK1095207A1 (zh)
TW (1) TW200507269A (zh)
WO (1) WO2004109783A1 (zh)

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US7858479B2 (en) 2004-05-14 2010-12-28 Panasonic Corporation Method and apparatus of fabricating semiconductor device
EP1881523B1 (en) * 2005-05-12 2013-01-02 Panasonic Corporation Plasma doping method and plasma doping apparatus
DE102006053182B4 (de) * 2006-11-09 2015-01-15 Infineon Technologies Ag Verfahren zur p-Dotierung von Silizium
JP2012503886A (ja) * 2008-09-25 2012-02-09 アプライド マテリアルズ インコーポレイテッド オクタデカボラン自己アモルファス化注入種を使用する無欠陥接合形成
KR20100040455A (ko) * 2008-10-10 2010-04-20 주식회사 동부하이텍 반도체 소자의 제조 방법
JP5557848B2 (ja) 2009-11-06 2014-07-23 株式会社日立製作所 半導体装置の製造方法
JP5246716B2 (ja) * 2009-11-25 2013-07-24 株式会社日本製鋼所 半導体基板の製造方法及びレーザアニール装置
JP2011171551A (ja) 2010-02-19 2011-09-01 Toyota Motor Corp 半導体装置の製造方法
CN102834899B (zh) * 2010-04-12 2015-08-05 株式会社日本制钢所 激光处理装置
JP5660880B2 (ja) * 2010-12-20 2015-01-28 住友重機械工業株式会社 レーザアニール方法
US20120289036A1 (en) * 2011-05-11 2012-11-15 Applied Materials, Inc. Surface dose retention of dopants by pre-amorphization and post implant passivation treatments
US9048099B2 (en) * 2013-05-09 2015-06-02 Applied Materials, Inc. Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal
US20150287824A1 (en) * 2014-04-03 2015-10-08 GlobalFoundries, Inc. Integrated circuits with stressed semiconductor substrates and processes for preparing integrated circuits including the stressed semiconductor substrates
JP7051203B2 (ja) * 2017-12-15 2022-04-11 住友重機械工業株式会社 アニール方法及びアニール装置

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Also Published As

Publication number Publication date
TWI360882B (zh) 2012-03-21
US20060183350A1 (en) 2006-08-17
JP4589606B2 (ja) 2010-12-01
EP1648023A1 (en) 2006-04-19
KR20060016801A (ko) 2006-02-22
WO2004109783A1 (ja) 2004-12-16
CN1830067A (zh) 2006-09-06
CN100426464C (zh) 2008-10-15
TW200507269A (en) 2005-02-16
JP2004363168A (ja) 2004-12-24
EP1648023A4 (en) 2008-05-21
KR100718976B1 (ko) 2007-05-16
US7932185B2 (en) 2011-04-26

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20150602