JPS5799747A - Light beam diffusor - Google Patents

Light beam diffusor

Info

Publication number
JPS5799747A
JPS5799747A JP17564280A JP17564280A JPS5799747A JP S5799747 A JPS5799747 A JP S5799747A JP 17564280 A JP17564280 A JP 17564280A JP 17564280 A JP17564280 A JP 17564280A JP S5799747 A JPS5799747 A JP S5799747A
Authority
JP
Japan
Prior art keywords
diffusor
laser
light beam
chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17564280A
Other languages
Japanese (ja)
Other versions
JPS6322453B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17564280A priority Critical patent/JPS5799747A/en
Publication of JPS5799747A publication Critical patent/JPS5799747A/en
Publication of JPS6322453B2 publication Critical patent/JPS6322453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To irradiate a laser beam only to a desired area to obtain uniform annealing by a method wherein the cross section of a tip of a light beam diffusor, which is situated between a laser source and an impurity-implanted substrate, facing the substrate is made to be equal with the area of a chip. CONSTITUTION:In a laser annealing process using, for example, a ruby laser, a light beam diffusor 1 made from a quartz rod is situated between the laser source and a substrate 12. An input end 2 of the light beam diffusor 1 is slightly larger than the laser beam diameter (for example, by approx. 10mm.), and its surface is roughly ground. An output end 3 of the diffusor 1 is shaped similarly with the shape of a chip 13 (for example, a rectangle of 5mm. square) and mirror polished. Further, the side is also mirror polished. With this structure, a scattered, uniformed layer beam can be irradiated onto the chip 13, accordingly, an yield in a laser annealing process can be enhanced, and also reduction of working process can be attained.
JP17564280A 1980-12-12 1980-12-12 Light beam diffusor Granted JPS5799747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17564280A JPS5799747A (en) 1980-12-12 1980-12-12 Light beam diffusor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17564280A JPS5799747A (en) 1980-12-12 1980-12-12 Light beam diffusor

Publications (2)

Publication Number Publication Date
JPS5799747A true JPS5799747A (en) 1982-06-21
JPS6322453B2 JPS6322453B2 (en) 1988-05-12

Family

ID=15999648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17564280A Granted JPS5799747A (en) 1980-12-12 1980-12-12 Light beam diffusor

Country Status (1)

Country Link
JP (1) JPS5799747A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials
WO2006055123A1 (en) * 2004-11-12 2006-05-26 Applied Materials, Inc. Single axis light pipe for homogenizing one axis of illumination systems based on laser diodes
US7135392B1 (en) 2005-07-20 2006-11-14 Applied Materials, Inc. Thermal flux laser annealing for ion implantation of semiconductor P-N junctions
US7422988B2 (en) 2004-11-12 2008-09-09 Applied Materials, Inc. Rapid detection of imminent failure in laser thermal processing of a substrate
US7438468B2 (en) 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7659187B2 (en) 2006-11-03 2010-02-09 Applied Materials, Inc. Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface
US7674999B2 (en) 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US7910499B2 (en) 2004-11-12 2011-03-22 Applied Materials, Inc. Autofocus for high power laser diode based annealing system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4589606B2 (en) * 2003-06-02 2010-12-01 住友重機械工業株式会社 Manufacturing method of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830875A (en) * 1971-08-25 1973-04-23
JPS5571147A (en) * 1978-11-15 1980-05-29 Kraftwerk Union Ag Rotary electric machine rotor cooler
JPS5577147A (en) * 1978-11-24 1980-06-10 Nat Res Dev Laser light beam diffusing unit for tempering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830875A (en) * 1971-08-25 1973-04-23
JPS5571147A (en) * 1978-11-15 1980-05-29 Kraftwerk Union Ag Rotary electric machine rotor cooler
JPS5577147A (en) * 1978-11-24 1980-06-10 Nat Res Dev Laser light beam diffusing unit for tempering

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials
WO2006055123A1 (en) * 2004-11-12 2006-05-26 Applied Materials, Inc. Single axis light pipe for homogenizing one axis of illumination systems based on laser diodes
US7129440B2 (en) 2004-11-12 2006-10-31 Applied Materials, Inc. Single axis light pipe for homogenizing slow axis of illumination systems based on laser diodes
US7422988B2 (en) 2004-11-12 2008-09-09 Applied Materials, Inc. Rapid detection of imminent failure in laser thermal processing of a substrate
US7438468B2 (en) 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7717617B2 (en) 2004-11-12 2010-05-18 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7910499B2 (en) 2004-11-12 2011-03-22 Applied Materials, Inc. Autofocus for high power laser diode based annealing system
US8586893B2 (en) 2004-11-12 2013-11-19 Applied Materials, Inc. Rapid detection of imminent failure in optical thermal processing of a substrate
US7135392B1 (en) 2005-07-20 2006-11-14 Applied Materials, Inc. Thermal flux laser annealing for ion implantation of semiconductor P-N junctions
US7674999B2 (en) 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US8288683B2 (en) 2006-08-23 2012-10-16 Applied Materials, Inc. Fast axis beam profile shaping for high power laser diode based annealing system
US7659187B2 (en) 2006-11-03 2010-02-09 Applied Materials, Inc. Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface

Also Published As

Publication number Publication date
JPS6322453B2 (en) 1988-05-12

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