HK1076644A1 - Boron doped diamond - Google Patents

Boron doped diamond

Info

Publication number
HK1076644A1
HK1076644A1 HK05108599A HK05108599A HK1076644A1 HK 1076644 A1 HK1076644 A1 HK 1076644A1 HK 05108599 A HK05108599 A HK 05108599A HK 05108599 A HK05108599 A HK 05108599A HK 1076644 A1 HK1076644 A1 HK 1076644A1
Authority
HK
Hong Kong
Prior art keywords
doped diamond
boron doped
layer
exceeding
cvd
Prior art date
Application number
HK05108599A
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
John Andrew Whitehead
Michael Andrew Cooper
Barbel Susanne Charlotte Dorn
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of HK1076644A1 publication Critical patent/HK1076644A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
HK05108599A 2001-12-14 2005-09-29 Boron doped diamond HK1076644A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0130005.2A GB0130005D0 (en) 2001-12-14 2001-12-14 Boron doped diamond
PCT/IB2002/005324 WO2003052174A2 (en) 2001-12-14 2002-12-13 Boron doped diamond

Publications (1)

Publication Number Publication Date
HK1076644A1 true HK1076644A1 (en) 2006-01-20

Family

ID=9927671

Family Applications (1)

Application Number Title Priority Date Filing Date
HK05108599A HK1076644A1 (en) 2001-12-14 2005-09-29 Boron doped diamond

Country Status (16)

Country Link
US (2) US7160617B2 (es)
EP (2) EP1463849B1 (es)
JP (2) JP5101792B2 (es)
KR (1) KR100847969B1 (es)
CN (1) CN1321227C (es)
AT (1) ATE353108T1 (es)
AU (1) AU2002366413A1 (es)
CA (1) CA2469150C (es)
DE (1) DE60217976T2 (es)
ES (1) ES2279897T3 (es)
GB (2) GB0130005D0 (es)
HK (1) HK1076644A1 (es)
IL (2) IL162354A0 (es)
RU (1) RU2315826C2 (es)
WO (1) WO2003052174A2 (es)
ZA (1) ZA200404371B (es)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1210445C (zh) * 2000-06-15 2005-07-13 六号元素(控股)公司 厚的单晶金刚石层、其制备方法和由该层生产的宝石
DE60135653D1 (de) 2000-06-15 2008-10-16 Element Six Pty Ltd Einkristalldiamant hergestellt durch cvd
DE10153310A1 (de) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
JP4711677B2 (ja) * 2002-09-06 2011-06-29 エレメント シックス リミテッド 着色されたダイヤモンド
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
CA2548449C (en) * 2003-12-12 2014-06-03 Element Six Limited Method of incorporating a mark in cvd diamond
DE602004016394D1 (de) * 2003-12-12 2008-10-16 Element Six Ltd Verfahren zum einbringen einer markierung in einen cvd-diamanten
US7309446B1 (en) * 2004-02-25 2007-12-18 Metadigm Llc Methods of manufacturing diamond capsules
US20100297391A1 (en) * 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US9470485B1 (en) 2004-03-29 2016-10-18 Victor B. Kley Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
EP1895579B1 (en) * 2005-06-20 2016-06-15 Nippon Telegraph And Telephone Corporation Diamond semiconductor element and process for producing the same
GB0512728D0 (en) * 2005-06-22 2005-07-27 Element Six Ltd High colour diamond
JP5457028B2 (ja) * 2005-06-22 2014-04-02 エレメント シックス リミテッド ハイカラーのダイヤモンド層
GB0513932D0 (en) 2005-07-08 2005-08-17 Element Six Ltd Single crystal diamond elements having spherical surfaces
US20070036896A1 (en) * 2005-08-09 2007-02-15 Chien-Min Sung Mosaic diamond substrates
US20090127565A1 (en) * 2005-08-09 2009-05-21 Chien-Min Sung P-n junctions on mosaic diamond substrates
JP5323492B2 (ja) * 2005-12-09 2013-10-23 エレメント シックス テクノロジーズ （プロプライアタリー） リミテッド 高結晶品質の合成ダイヤモンド
CN100390316C (zh) * 2006-01-19 2008-05-28 上海电机学院 n型CVD共掺杂金刚石薄膜的制备方法
EP2064368B1 (en) 2006-09-05 2017-05-31 Element Six Technologies Limited Solid diamond electrode
US7833581B2 (en) * 2006-09-11 2010-11-16 The Hong Kong University Of Science And Technology Method for making a highly stable diamond film on a substrate
GB0622482D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Diamond electrode
GB0622483D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Electrochemical apparatus having a forced flow arrangement
GB0700984D0 (en) 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
EP2118335A1 (en) * 2007-01-22 2009-11-18 Element Six Limited High uniformity boron doped diamond material
CN101827713B (zh) * 2007-07-27 2013-06-26 瓦林玛柯有限公司 用于标记贵重物品的方法
US20090260396A1 (en) * 2008-04-16 2009-10-22 Eitan Broukman Methods for processing ornamental diamonds and corresponding ornamental diamonds
TWI457475B (zh) * 2008-05-05 2014-10-21 Carnegie Inst Of Washington 超韌性單晶型摻硼鑽石
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
AU2009324921A1 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal CVD diamond rapid growth rate
US9068257B2 (en) * 2009-06-26 2015-06-30 Element Six Technologies Limited Diamond material
JP5368634B2 (ja) * 2009-06-26 2013-12-18 エレメント シックス リミテッド ファンシーな橙色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB2486778B (en) * 2010-12-23 2013-10-23 Element Six Ltd Controlling doping of synthetic diamond material
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201104579D0 (en) * 2011-03-18 2011-05-04 Element Six Ltd Diamond based electrochemical sensors
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
GB201216697D0 (en) 2012-09-19 2012-10-31 Element Six Ltd Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
US9921017B1 (en) 2013-03-15 2018-03-20 Victor B. Kley User identification for weapons and site sensing fire control
CN103938182B (zh) * 2014-04-08 2016-05-04 上海交通大学 硼氮共掺纳米基定向金刚石薄膜的制备方法
WO2015199180A1 (ja) 2014-06-25 2015-12-30 住友電気工業株式会社 ダイヤモンド基板の製造方法、ダイヤモンド基板、及び、ダイヤモンド複合基板
JP6636239B2 (ja) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
JP6594889B2 (ja) * 2014-10-29 2019-10-23 住友電気工業株式会社 単結晶ダイヤモンド材料、ならびにそれを含む工具、放射温度モニター、および赤外光学部品
JP2017010967A (ja) * 2015-06-16 2017-01-12 株式会社Flosfia 成膜方法
KR20170027112A (ko) 2015-09-01 2017-03-09 장상구 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
CN108602699B (zh) 2016-02-05 2021-04-27 西门子能源美国公司 在升高的压力下的电氧化
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
EP3686321A4 (en) * 2017-09-19 2021-07-28 Sumitomo Electric Industries, Ltd. MONOCRISTALLINE DIAMOND AND ASSOCIATED PRODUCTION PROCESS
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115261984A (zh) * 2022-09-29 2022-11-01 北京芯美达科技有限公司 一种单晶金刚石晶格外延补偿方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8810111D0 (en) * 1988-04-28 1988-06-02 Jones B L Diamond growth
JP2730144B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層形成法
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
EP0445754B1 (en) * 1990-03-06 1996-02-14 Sumitomo Electric Industries, Ltd. Method for growing a diamond or c-BN thin film
DE4007057A1 (de) * 1990-03-07 1991-09-12 Starck Hermann C Fa Kobaltgebundene diamantwerkzeuge, verfahren zu ihrerherstellung sowie deren verwendung
US5381755A (en) * 1991-08-20 1995-01-17 The United States Of America As Represented By The Secretary Of The Navy Method of synthesizing high quality, doped diamond and diamonds and devices obtained therefrom
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
NL9201987A (nl) * 1992-11-13 1994-06-01 Stichting Katholieke Univ Werkwijze voor het vervaardigen van een eenkristallijne diamant.
JPH06183893A (ja) * 1992-12-16 1994-07-05 Sumitomo Electric Ind Ltd ダイヤモンド基板のクリーニング方法
JPH06345592A (ja) * 1993-06-10 1994-12-20 Kobe Steel Ltd ダイヤモンド薄膜の形成方法
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
JP4291886B2 (ja) * 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
US5635258A (en) * 1995-04-03 1997-06-03 National Science Council Method of forming a boron-doped diamond film by chemical vapor deposition
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
GB9617458D0 (en) * 1996-08-20 1996-10-02 Turner Dev Ltd Improvements in wood chipping machines
JP4114709B2 (ja) * 1996-09-05 2008-07-09 株式会社神戸製鋼所 ダイヤモンド膜の形成方法
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JPH11236292A (ja) * 1998-02-25 1999-08-31 Namiki Precision Jewel Co Ltd ダイヤモンドのプラズマエッチング加工方法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
DE60135653D1 (de) * 2000-06-15 2008-10-16 Element Six Pty Ltd Einkristalldiamant hergestellt durch cvd
CN1210445C (zh) * 2000-06-15 2005-07-13 六号元素(控股)公司 厚的单晶金刚石层、其制备方法和由该层生产的宝石
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
JP4711677B2 (ja) * 2002-09-06 2011-06-29 エレメント シックス リミテッド 着色されたダイヤモンド
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
KR20040077674A (ko) 2004-09-06
IL162354A0 (en) 2005-11-20
CN1612955A (zh) 2005-05-04
US7160617B2 (en) 2007-01-09
JP2005512928A (ja) 2005-05-12
DE60217976D1 (de) 2007-03-22
IL162354A (en) 2009-09-22
JP2010222252A (ja) 2010-10-07
DE60217976T2 (de) 2007-05-24
EP1463849B1 (en) 2007-01-31
WO2003052174A3 (en) 2003-10-02
EP1780315B1 (en) 2015-04-15
CA2469150A1 (en) 2003-06-26
EP1780315A2 (en) 2007-05-02
AU2002366413A1 (en) 2003-06-30
ES2279897T3 (es) 2007-09-01
EP1780315A3 (en) 2010-02-24
RU2315826C2 (ru) 2008-01-27
ZA200404371B (en) 2005-06-03
KR100847969B1 (ko) 2008-07-22
GB0415787D0 (en) 2004-08-18
RU2004121782A (ru) 2005-06-10
US20070092647A1 (en) 2007-04-26
GB0130005D0 (en) 2002-02-06
GB2400116B (en) 2005-06-22
EP1463849A2 (en) 2004-10-06
CN1321227C (zh) 2007-06-13
ATE353108T1 (de) 2007-02-15
JP5101792B2 (ja) 2012-12-19
GB2400116A (en) 2004-10-06
WO2003052174A2 (en) 2003-06-26
CA2469150C (en) 2009-09-15
US20040180205A1 (en) 2004-09-16

Similar Documents

Publication Publication Date Title
GB2400116B (en) Boron doped diamond
AU7436801A (en) Single crystal diamond prepared by cvd
GB2400115B (en) Coloured diamond
IL106864A (en) Chemical vapor deposition- produced silicon carbide having improved properties
BR9713512A (pt) Gemas formadas de carboneto de silìcio com revestimento de diamante
ATE249531T1 (de) Dünnschichten aus diamantartigem glass
AU1106000A (en) Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys
EP1403404A4 (en) SINGLE CRYSTAL SILICON CARBIDE AND PROCESS FOR PRODUCING THE SAME
HK1088715A1 (en) Single crystal gallium nitride substrate, method of growing the same and method of producing the same
WO2004059030A3 (de) Werkstück mit alcr-haltiger hartstoffschicht und verfahren zur herstellung
CA2407353A1 (en) Biosensor
IL153381A0 (en) Thick single cyrstal diamond layer, method for making it and gemstones produced from the layer
EP1150345A3 (en) Fluorine-containing materials and processes
ATE333709T1 (de) Piezokeramischer biegewandler sowie verwendung des piezokeramischen biegewandlers
DE59800697D1 (de) Feuerfester werkstoff auf basis chromkorund, chromkorund-stein sowie verwendung des steins
GB0022947D0 (en) Cast diamond tools and their formation by chemical vapor deposition
FR2820737B1 (fr) Procede de fabrication d'un composite carbone/carbure de silicium
EP0983981A4 (en) CARBON-SILICON-CARBIDE COMPOSITE
AU3950300A (en) Siliceous substrate with a silane layer and its manufacture
WO2000026433A3 (de) Polykristalline diamantschicht mit (100)-textur
AU2002368368A1 (en) Process for producing diamond, graphite or mixture of diamond and graphite
AU2003275516A1 (en) Diamond material compounded of chemical vapor deposition diamond and polycrystalline-diamond, and the use of the same
AU2002355097A1 (en) Whisker-free silicon carbide fibers
EP1375704A4 (en) DIAMOND SUBSTRATE HAVING PIEZOELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME
USD460713S1 (en) Diamond or precious stone

Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20221212