GB0512728D0 - High colour diamond - Google Patents
High colour diamondInfo
- Publication number
- GB0512728D0 GB0512728D0 GBGB0512728.7A GB0512728A GB0512728D0 GB 0512728 D0 GB0512728 D0 GB 0512728D0 GB 0512728 A GB0512728 A GB 0512728A GB 0512728 D0 GB0512728 D0 GB 0512728D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- diamond
- high colour
- impurity atom
- atom type
- colour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/006—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
A method of producing CVD diamond having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.
Priority Applications (19)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0512728.7A GB0512728D0 (en) | 2005-06-22 | 2005-06-22 | High colour diamond |
AU2006260656A AU2006260656A1 (en) | 2005-06-22 | 2006-06-22 | High colour diamond layer |
CA2607202A CA2607202C (en) | 2005-06-22 | 2006-06-22 | High colour diamond layer |
PCT/IB2006/001694 WO2006136929A2 (en) | 2005-06-22 | 2006-06-22 | High colour diamond layer |
KR1020077029720A KR101307032B1 (en) | 2005-06-22 | 2006-06-22 | High colour diamond layer |
AT06755960T ATE535630T1 (en) | 2005-06-22 | 2006-06-22 | INTENSIVE COLORED DIAMOND |
TW095122494A TWI458852B (en) | 2005-06-22 | 2006-06-22 | High colour diamond |
RU2008101362/05A RU2415204C2 (en) | 2005-06-22 | 2006-06-22 | Colourless diamond layer |
US11/917,908 US7964280B2 (en) | 2005-06-22 | 2006-06-22 | High colour diamond layer |
CN2006800277003A CN101248210B (en) | 2005-06-22 | 2006-06-22 | High colour diamond |
EP06755960A EP1920080B1 (en) | 2005-06-22 | 2006-06-22 | High colour diamond |
AT10179807T ATE550457T1 (en) | 2005-06-22 | 2006-06-22 | HIGH COLOR DIAMOND |
JP2008517624A JP5457028B2 (en) | 2005-06-22 | 2006-06-22 | High color diamond layer |
GB0612446A GB2428690B (en) | 2005-06-22 | 2006-06-22 | High colour diamond |
RU2011103481/05A RU2473720C2 (en) | 2005-06-22 | 2006-06-22 | Colourless monocrystalline diamond and method for production thereof |
EP10179807A EP2253733B1 (en) | 2005-06-22 | 2006-06-22 | High colour diamond |
IL187010A IL187010A (en) | 2005-06-22 | 2007-10-30 | High colour diamond |
HK08112725.9A HK1121199A1 (en) | 2005-06-22 | 2008-11-21 | High colour diamond layer |
JP2013090992A JP5571223B2 (en) | 2005-06-22 | 2013-04-24 | High color diamond layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0512728.7A GB0512728D0 (en) | 2005-06-22 | 2005-06-22 | High colour diamond |
Publications (1)
Publication Number | Publication Date |
---|---|
GB0512728D0 true GB0512728D0 (en) | 2005-07-27 |
Family
ID=34855972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0512728.7A Ceased GB0512728D0 (en) | 2005-06-22 | 2005-06-22 | High colour diamond |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN101248210B (en) |
AT (2) | ATE535630T1 (en) |
GB (1) | GB0512728D0 (en) |
TW (1) | TWI458852B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201000768D0 (en) * | 2010-01-18 | 2010-03-03 | Element Six Ltd | CVD single crystal diamond material |
SG179318A1 (en) * | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
CN106884202B (en) | 2012-06-29 | 2019-12-03 | 住友电气工业株式会社 | Diamond single crystal and MONOCRYSTAL DIAMOND TOOLS |
GB201216697D0 (en) * | 2012-09-19 | 2012-10-31 | Element Six Ltd | Single crystal chemical vapour deposited synthetic diamond materials having uniform colour |
CN110023238B (en) * | 2016-11-30 | 2022-10-25 | 住友电气工业株式会社 | Polycrystalline diamond and method for producing the same |
GB201620415D0 (en) * | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
CN106987900A (en) * | 2017-05-08 | 2017-07-28 | 曹秀坤 | A kind of diamond large single crystal and preparation method thereof |
EP3875563A4 (en) * | 2018-10-31 | 2022-08-17 | Daicel Corporation | Fluorescent diamond and method for producing same |
CN115369485B (en) * | 2022-07-05 | 2023-07-18 | 天津美力芯科技有限公司 | Compensation doping method for diamond |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0130004D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
TWI271450B (en) * | 2002-12-13 | 2007-01-21 | Element Six Ltd | Boron doped diamond |
-
2005
- 2005-06-22 GB GBGB0512728.7A patent/GB0512728D0/en not_active Ceased
-
2006
- 2006-06-22 AT AT06755960T patent/ATE535630T1/en active
- 2006-06-22 CN CN2006800277003A patent/CN101248210B/en active Active
- 2006-06-22 TW TW095122494A patent/TWI458852B/en active
- 2006-06-22 AT AT10179807T patent/ATE550457T1/en active
Also Published As
Publication number | Publication date |
---|---|
CN101248210B (en) | 2011-05-18 |
ATE550457T1 (en) | 2012-04-15 |
TWI458852B (en) | 2014-11-01 |
TW200710259A (en) | 2007-03-16 |
ATE535630T1 (en) | 2011-12-15 |
CN101248210A (en) | 2008-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL187010A (en) | High colour diamond | |
TW200710259A (en) | High colour diamond | |
TW200730674A (en) | New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate | |
TW200632154A (en) | Process for producing high quality large size silicon carbide crystals | |
BRPI0508314A (en) | process to produce silicon | |
MX2007006549A (en) | Method for producing annelated piperazin-2-one derivatives and intermediates of said method. | |
MXPA05009068A (en) | Dihydropteridinones, method for the production and use thereof in the form of drugs. | |
WO2006027705A3 (en) | Synthesis of triethylenetetramines | |
WO2010048607A3 (en) | Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing | |
ATE365818T1 (en) | SINGLE CRYSTALLINE DIAMOND | |
MY150538A (en) | Process for the manufacture of dihydropteridinones | |
NO20081833L (en) | Process for the preparation of carotenoid synthesizing microorganism and process for the production of carotenoids | |
SG164388A1 (en) | Method for producing diisocyanates | |
WO2005007937A3 (en) | Annealing single crystal chemical vapor deposition diamonds | |
MX2007010141A (en) | Processes for the preparation of linezolid intermediate. | |
MY159243A (en) | Single crystal diamond material | |
IL174350A0 (en) | Spinel articles and methods for forming same | |
NO20083269L (en) | Process for using crystalline orlistat methods | |
MX2009003106A (en) | Novel crystalline modification of 4- (n-methyl-2-chloro-5-pyridyl methylamino) -2,5-dihydrofuran-2-one. | |
WO2007141017A8 (en) | Process for producing crystalline silicon and gaseous hydrogen | |
TW200728194A (en) | Production process of group 13 metal nitride crystal, production method of semiconductor device, and solution and melt for use in these production process and method | |
TH86662A (en) | A very colorful type of diamond. | |
SG147462A1 (en) | Spinel articles and methods for forming same | |
IL184519A0 (en) | Protease inhibitor precursor synthesis | |
WO2023281126A3 (en) | Compounds for electronic devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |