ATE353108T1 - Bordotierte diamant und verfahren zu ihrer herstellung - Google Patents

Bordotierte diamant und verfahren zu ihrer herstellung

Info

Publication number
ATE353108T1
ATE353108T1 AT02790571T AT02790571T ATE353108T1 AT E353108 T1 ATE353108 T1 AT E353108T1 AT 02790571 T AT02790571 T AT 02790571T AT 02790571 T AT02790571 T AT 02790571T AT E353108 T1 ATE353108 T1 AT E353108T1
Authority
AT
Austria
Prior art keywords
board
production
doped diamonds
layer
diamonds
Prior art date
Application number
AT02790571T
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
Andrew John Whitehead
Michael Andrew Cooper
Baerbel Susanne Charlotte Dorn
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Application granted granted Critical
Publication of ATE353108T1 publication Critical patent/ATE353108T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
AT02790571T 2001-12-14 2002-12-13 Bordotierte diamant und verfahren zu ihrer herstellung ATE353108T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0130005.2A GB0130005D0 (en) 2001-12-14 2001-12-14 Boron doped diamond

Publications (1)

Publication Number Publication Date
ATE353108T1 true ATE353108T1 (de) 2007-02-15

Family

ID=9927671

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02790571T ATE353108T1 (de) 2001-12-14 2002-12-13 Bordotierte diamant und verfahren zu ihrer herstellung

Country Status (16)

Country Link
US (2) US7160617B2 (de)
EP (2) EP1463849B1 (de)
JP (2) JP5101792B2 (de)
KR (1) KR100847969B1 (de)
CN (1) CN1321227C (de)
AT (1) ATE353108T1 (de)
AU (1) AU2002366413A1 (de)
CA (1) CA2469150C (de)
DE (1) DE60217976T2 (de)
ES (1) ES2279897T3 (de)
GB (2) GB0130005D0 (de)
HK (1) HK1076644A1 (de)
IL (2) IL162354A0 (de)
RU (1) RU2315826C2 (de)
WO (1) WO2003052174A2 (de)
ZA (1) ZA200404371B (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2379451B (en) * 2000-06-15 2004-05-05 Element Six Thick single crystal diamond layer method for making it and gemstones produced from the layer
KR100837033B1 (ko) * 2000-06-15 2008-06-10 엘리먼트 씩스 (프티) 리미티드 화학 증착에 의해 제조된 단결정 다이아몬드
DE10153310A1 (de) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
US7172655B2 (en) * 2002-09-06 2007-02-06 Daniel James Twitchen Colored diamond
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR101240785B1 (ko) * 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
AU2004303615A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in CVD diamond
US20100297391A1 (en) * 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US7183548B1 (en) 2004-02-25 2007-02-27 Metadigm Llc Apparatus for modifying and measuring diamond and other workpiece surfaces with nanoscale precision
US9470485B1 (en) 2004-03-29 2016-10-18 Victor B. Kley Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
EP2400531A3 (de) * 2005-06-20 2012-03-28 Nippon Telegraph And Telephone Corporation Diamanthalbleiterbauelement und Herstellungsverfahren dafür
GB2428690B (en) * 2005-06-22 2010-12-29 Element Six Ltd High colour diamond
GB0512728D0 (en) * 2005-06-22 2005-07-27 Element Six Ltd High colour diamond
GB0513932D0 (en) 2005-07-08 2005-08-17 Element Six Ltd Single crystal diamond elements having spherical surfaces
US20090127565A1 (en) * 2005-08-09 2009-05-21 Chien-Min Sung P-n junctions on mosaic diamond substrates
US20070036896A1 (en) * 2005-08-09 2007-02-15 Chien-Min Sung Mosaic diamond substrates
WO2007066215A2 (en) * 2005-12-09 2007-06-14 Element Six Technologies (Pty) Ltd High crystalline quality synthetic diamond
CN100390316C (zh) * 2006-01-19 2008-05-28 上海电机学院 n型CVD共掺杂金刚石薄膜的制备方法
ES2638115T3 (es) * 2006-09-05 2017-10-18 Element Six Technologies Limited Electrodo de diamante sólido
US7833581B2 (en) * 2006-09-11 2010-11-16 The Hong Kong University Of Science And Technology Method for making a highly stable diamond film on a substrate
GB0622483D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Electrochemical apparatus having a forced flow arrangement
GB0622482D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Diamond electrode
GB0700984D0 (en) 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
WO2008090513A2 (en) * 2007-01-22 2008-07-31 Element Six Limited Diamond electronic devices including a surface and methods for their manufacture
EP2186649A4 (de) * 2007-07-27 2011-04-06 Valinmark Inc Verfahren zur markierung von wertvollen artikeln
US20090260396A1 (en) * 2008-04-16 2009-10-22 Eitan Broukman Methods for processing ornamental diamonds and corresponding ornamental diamonds
US9023306B2 (en) * 2008-05-05 2015-05-05 Carnegie Institution Of Washington Ultratough single crystal boron-doped diamond
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
AU2009324921A1 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal CVD diamond rapid growth rate
SG176933A1 (en) * 2009-06-26 2012-01-30 Element Six Ltd Method for making fancy pale blue or fancy pale blue /green single crystal cvd diamond and product obtained
US9017632B2 (en) * 2009-06-26 2015-04-28 Element Six Technologies Limited Diamond material
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
RU2555018C2 (ru) 2010-12-23 2015-07-10 Элемент Сикс Лимитед Контролируемое легирование синтетического алмазного материала
GB201104579D0 (en) * 2011-03-18 2011-05-04 Element Six Ltd Diamond based electrochemical sensors
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
GB201216697D0 (en) 2012-09-19 2012-10-31 Element Six Ltd Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
US9921017B1 (en) 2013-03-15 2018-03-20 Victor B. Kley User identification for weapons and site sensing fire control
CN103938182B (zh) * 2014-04-08 2016-05-04 上海交通大学 硼氮共掺纳米基定向金刚石薄膜的制备方法
JP6631517B2 (ja) * 2014-06-25 2020-01-15 住友電気工業株式会社 ダイヤモンド基板、及び、ダイヤモンド複合基板
JP6636239B2 (ja) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
EP3214208B1 (de) * 2014-10-29 2021-08-04 Sumitomo Electric Industries, Ltd. Einkristallines diamantmaterial und werkzeug, strahlungstemperaturmonitor und infrarot- und optische komponente mit besagtem diamantmaterial
JP2017010967A (ja) * 2015-06-16 2017-01-12 株式会社Flosfia 成膜方法
KR20170027112A (ko) 2015-09-01 2017-03-09 장상구 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
CA3013590C (en) 2016-02-05 2020-07-07 Siemens Energy, Inc. Electrooxidation at elevated pressures
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
US20200216974A1 (en) * 2017-09-19 2020-07-09 Sumitomo Electric Industries, Ltd. Single-crystal diamond and method of manufacturing the same
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115261984A (zh) * 2022-09-29 2022-11-01 北京芯美达科技有限公司 一种单晶金刚石晶格外延补偿方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8810111D0 (en) * 1988-04-28 1988-06-02 Jones B L Diamond growth
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
JP2730144B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層形成法
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
EP0445754B1 (de) * 1990-03-06 1996-02-14 Sumitomo Electric Industries, Ltd. Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN
DE4007057A1 (de) * 1990-03-07 1991-09-12 Starck Hermann C Fa Kobaltgebundene diamantwerkzeuge, verfahren zu ihrerherstellung sowie deren verwendung
US5381755A (en) * 1991-08-20 1995-01-17 The United States Of America As Represented By The Secretary Of The Navy Method of synthesizing high quality, doped diamond and diamonds and devices obtained therefrom
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
NL9201987A (nl) * 1992-11-13 1994-06-01 Stichting Katholieke Univ Werkwijze voor het vervaardigen van een eenkristallijne diamant.
JPH06183893A (ja) * 1992-12-16 1994-07-05 Sumitomo Electric Ind Ltd ダイヤモンド基板のクリーニング方法
JPH06345592A (ja) * 1993-06-10 1994-12-20 Kobe Steel Ltd ダイヤモンド薄膜の形成方法
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
JP4291886B2 (ja) * 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
US5635258A (en) * 1995-04-03 1997-06-03 National Science Council Method of forming a boron-doped diamond film by chemical vapor deposition
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
GB9617458D0 (en) * 1996-08-20 1996-10-02 Turner Dev Ltd Improvements in wood chipping machines
JP4114709B2 (ja) * 1996-09-05 2008-07-09 株式会社神戸製鋼所 ダイヤモンド膜の形成方法
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JPH11236292A (ja) * 1998-02-25 1999-08-31 Namiki Precision Jewel Co Ltd ダイヤモンドのプラズマエッチング加工方法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB2379451B (en) * 2000-06-15 2004-05-05 Element Six Thick single crystal diamond layer method for making it and gemstones produced from the layer
KR100837033B1 (ko) * 2000-06-15 2008-06-10 엘리먼트 씩스 (프티) 리미티드 화학 증착에 의해 제조된 단결정 다이아몬드
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
US7172655B2 (en) * 2002-09-06 2007-02-06 Daniel James Twitchen Colored diamond
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
EP1780315A2 (de) 2007-05-02
DE60217976D1 (de) 2007-03-22
GB2400116B (en) 2005-06-22
RU2315826C2 (ru) 2008-01-27
KR20040077674A (ko) 2004-09-06
IL162354A (en) 2009-09-22
WO2003052174A3 (en) 2003-10-02
HK1076644A1 (en) 2006-01-20
EP1463849A2 (de) 2004-10-06
CN1321227C (zh) 2007-06-13
AU2002366413A1 (en) 2003-06-30
US20040180205A1 (en) 2004-09-16
WO2003052174A2 (en) 2003-06-26
DE60217976T2 (de) 2007-05-24
ZA200404371B (en) 2005-06-03
JP5101792B2 (ja) 2012-12-19
GB2400116A (en) 2004-10-06
RU2004121782A (ru) 2005-06-10
GB0415787D0 (en) 2004-08-18
JP2010222252A (ja) 2010-10-07
GB0130005D0 (en) 2002-02-06
IL162354A0 (en) 2005-11-20
EP1780315A3 (de) 2010-02-24
KR100847969B1 (ko) 2008-07-22
EP1463849B1 (de) 2007-01-31
CN1612955A (zh) 2005-05-04
CA2469150C (en) 2009-09-15
CA2469150A1 (en) 2003-06-26
US7160617B2 (en) 2007-01-09
EP1780315B1 (de) 2015-04-15
JP2005512928A (ja) 2005-05-12
ES2279897T3 (es) 2007-09-01
US20070092647A1 (en) 2007-04-26

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