IL162354A0 - Boron doped diamond - Google Patents

Boron doped diamond

Info

Publication number
IL162354A0
IL162354A0 IL16235402A IL16235402A IL162354A0 IL 162354 A0 IL162354 A0 IL 162354A0 IL 16235402 A IL16235402 A IL 16235402A IL 16235402 A IL16235402 A IL 16235402A IL 162354 A0 IL162354 A0 IL 162354A0
Authority
IL
Israel
Prior art keywords
doped diamond
boron doped
layer
exceeding
cvd
Prior art date
Application number
IL16235402A
Other languages
English (en)
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of IL162354A0 publication Critical patent/IL162354A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
IL16235402A 2001-12-14 2002-12-13 Boron doped diamond IL162354A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0130005.2A GB0130005D0 (en) 2001-12-14 2001-12-14 Boron doped diamond
PCT/IB2002/005324 WO2003052174A2 (en) 2001-12-14 2002-12-13 Boron doped diamond

Publications (1)

Publication Number Publication Date
IL162354A0 true IL162354A0 (en) 2005-11-20

Family

ID=9927671

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16235402A IL162354A0 (en) 2001-12-14 2002-12-13 Boron doped diamond
IL162354A IL162354A (en) 2001-12-14 2004-06-03 A drugged diamond in Boron

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL162354A IL162354A (en) 2001-12-14 2004-06-03 A drugged diamond in Boron

Country Status (16)

Country Link
US (2) US7160617B2 (de)
EP (2) EP1780315B1 (de)
JP (2) JP5101792B2 (de)
KR (1) KR100847969B1 (de)
CN (1) CN1321227C (de)
AT (1) ATE353108T1 (de)
AU (1) AU2002366413A1 (de)
CA (1) CA2469150C (de)
DE (1) DE60217976T2 (de)
ES (1) ES2279897T3 (de)
GB (2) GB0130005D0 (de)
HK (1) HK1076644A1 (de)
IL (2) IL162354A0 (de)
RU (1) RU2315826C2 (de)
WO (1) WO2003052174A2 (de)
ZA (1) ZA200404371B (de)

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CA2412853C (en) 2000-06-15 2009-08-25 Geoffrey Alan Scarsbrook Single crystal diamond prepared by cvd
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GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
DE60335117D1 (de) 2002-09-06 2011-01-05 Element Six Ltd Verfahren zum ändern die farbe eines cvd-artigen diamanteinkristalles und dadurch hergestellte diamant-schicht
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
ATE407100T1 (de) * 2003-12-12 2008-09-15 Element Six Ltd Verfahren zum einbringen einer markierung in einen cvd-diamanten
DE602004016394D1 (de) * 2003-12-12 2008-10-16 Element Six Ltd Verfahren zum einbringen einer markierung in einen cvd-diamanten
US7309446B1 (en) 2004-02-25 2007-12-18 Metadigm Llc Methods of manufacturing diamond capsules
US20100297391A1 (en) * 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US9470485B1 (en) 2004-03-29 2016-10-18 Victor B. Kley Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
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GB0622483D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Electrochemical apparatus having a forced flow arrangement
GB0700984D0 (en) 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
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CN101827713B (zh) * 2007-07-27 2013-06-26 瓦林玛柯有限公司 用于标记贵重物品的方法
US20090260396A1 (en) * 2008-04-16 2009-10-22 Eitan Broukman Methods for processing ornamental diamonds and corresponding ornamental diamonds
US9023306B2 (en) * 2008-05-05 2015-05-05 Carnegie Institution Of Washington Ultratough single crystal boron-doped diamond
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
JP2012509831A (ja) * 2008-11-25 2012-04-26 カーネギー インスチチューション オブ ワシントン 急速成長速度における単結晶ｃｖｄダイヤモンドの製造
CN104630882B (zh) * 2009-06-26 2018-03-30 六号元素有限公司 用于制备鲜艳橙色着色的单晶cvd 金刚石的方法及其获得的产品
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
SG191220A1 (en) * 2010-12-23 2013-07-31 Element Six Ltd Controlling doping of synthetic diamond material
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201104579D0 (en) * 2011-03-18 2011-05-04 Element Six Ltd Diamond based electrochemical sensors
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
GB201216697D0 (en) 2012-09-19 2012-10-31 Element Six Ltd Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
US9921017B1 (en) 2013-03-15 2018-03-20 Victor B. Kley User identification for weapons and site sensing fire control
CN103938182B (zh) * 2014-04-08 2016-05-04 上海交通大学 硼氮共掺纳米基定向金刚石薄膜的制备方法
JP6631517B2 (ja) * 2014-06-25 2020-01-15 住友電気工業株式会社 ダイヤモンド基板、及び、ダイヤモンド複合基板
JP6636239B2 (ja) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
SG11201703383WA (en) * 2014-10-29 2017-06-29 Sumitomo Electric Industries Single-crystal diamond material, and tool, radiation temperature monitor, and infrared optical component including said diamond material
JP2017010967A (ja) * 2015-06-16 2017-01-12 株式会社Flosfia 成膜方法
KR20170027112A (ko) 2015-09-01 2017-03-09 장상구 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
CN108602699B (zh) 2016-02-05 2021-04-27 西门子能源美国公司 在升高的压力下的电氧化
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
EP3686321A4 (de) * 2017-09-19 2021-07-28 Sumitomo Electric Industries, Ltd. Monokristalliner diamant und herstellungsverfahren dafür
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115261984A (zh) * 2022-09-29 2022-11-01 北京芯美达科技有限公司 一种单晶金刚石晶格外延补偿方法

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GB0130004D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
DE60335117D1 (de) 2002-09-06 2011-01-05 Element Six Ltd Verfahren zum ändern die farbe eines cvd-artigen diamanteinkristalles und dadurch hergestellte diamant-schicht
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GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
EP1463849A2 (de) 2004-10-06
AU2002366413A1 (en) 2003-06-30
KR20040077674A (ko) 2004-09-06
ES2279897T3 (es) 2007-09-01
EP1780315B1 (de) 2015-04-15
GB2400116A (en) 2004-10-06
ATE353108T1 (de) 2007-02-15
DE60217976T2 (de) 2007-05-24
GB2400116B (en) 2005-06-22
JP2005512928A (ja) 2005-05-12
US7160617B2 (en) 2007-01-09
EP1780315A3 (de) 2010-02-24
RU2004121782A (ru) 2005-06-10
CA2469150A1 (en) 2003-06-26
EP1780315A2 (de) 2007-05-02
IL162354A (en) 2009-09-22
WO2003052174A2 (en) 2003-06-26
GB0415787D0 (en) 2004-08-18
CN1612955A (zh) 2005-05-04
EP1463849B1 (de) 2007-01-31
WO2003052174A3 (en) 2003-10-02
ZA200404371B (en) 2005-06-03
US20070092647A1 (en) 2007-04-26
DE60217976D1 (de) 2007-03-22
CA2469150C (en) 2009-09-15
CN1321227C (zh) 2007-06-13
JP2010222252A (ja) 2010-10-07
RU2315826C2 (ru) 2008-01-27
JP5101792B2 (ja) 2012-12-19
HK1076644A1 (en) 2006-01-20
US20040180205A1 (en) 2004-09-16
KR100847969B1 (ko) 2008-07-22
GB0130005D0 (en) 2002-02-06

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