JP2012509831A - 急速成長速度における単結晶cvdダイヤモンドの製造 - Google Patents
急速成長速度における単結晶cvdダイヤモンドの製造 Download PDFInfo
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- JP2012509831A JP2012509831A JP2011537701A JP2011537701A JP2012509831A JP 2012509831 A JP2012509831 A JP 2012509831A JP 2011537701 A JP2011537701 A JP 2011537701A JP 2011537701 A JP2011537701 A JP 2011537701A JP 2012509831 A JP2012509831 A JP 2012509831A
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- Prior art keywords
- diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
本発明は、NSF−EAR、NSF−DMR、DOE−NNSA(CDAC)及びバルザン財団の支援を受けた。米国政府は、本発明に対して一定の権利を有する。
参考文献一覧
1. C.S. Yan, Y.K. Vohra, H.K. Mao, and R.J. Hemley, Proc. Natl. Acad. Sci. U.S.A. 99, 12523 (2002).
2. R.J. Hemley, H.K. Mao, C.S. Yan and Y.K. Vohra, U.S.Patent No. 6,858,078 (22 February 2005).
3. O.A. Williams and R. Jackman, Diamond Relat. Mater. 13, 557 (2004).
4. J. Asmussen, T.A. Grotjohn, T. Schuelke, M.F. Becker, M.K. Yaran, D.J. King, S. Wicklein, and D.K. Reinhard, Appl. Phys. Lett. 93, 1 (2008).
5. G.Z. Cao, J.J. Schermer, W.J.P. van Enckevort, W.A.L.M. Elst, and L.J. Giling, J. Appl. Phys. 79, 1357 (1996).
6. T. Grotjohn, R. Liske, K. Hassouni, and J. Asmussen, Diamond Relat. Mater. 14, 288 (2005).
7. C.Y. Chin, C.S. Yan, J. Lai and RJ. Hemley, Carnegie Summer Symposium, August (2006).
8. Y. Kokuno, A. Chayahara, Y. Soda, Y. Horino and N. Fujimori, Diamond Relat. Mater. 14, 1743 (2005).
9. S.S. Ho, C.S. Yan, Z. Liu, H.K. Mao and R.J. Hemley, Industrial Diamond Rev. 1, 28 (2006).
10. Y.F. Meng, C.S. Yan, J. Lai, S. Krasnicki, H.Y. Shu, T. Yu, Q. Liang, H.K. Mao, R.J. Hemley, Proc. Natl. Acad. Sci. U.S.A. In Press (2008).
11. S.C. Charles et al., Phys. Stat. Sol. (a), 11, 2473 (2004).
12. J.A. Smith, K.N. Rosser, H. Yagi, M.I. Wallace, P.W. May, and M.N.R. Ashfold, Diamond Relat. Mater. 10, 370 (2001).
13. Y. Liao, C.H. Li, Z.Y. Ye, C. Chang, G.Z. Wang, and R.C. Fang, Diamond Relat. Mater. 9, 1716 (2000).
14. T.P. Mollart and K.L. Lewis, Diamond Relat. Mater. 8, 236 (1999).
15. E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka, J. Appl. Phys. 73, 3041 (1993).
16. Y.A. Mankelevich and P.W. May, Diamond Relat. Mater. 17, 1021 (2008).
17. M. Fauchet and I.H. Campbell, Crit. Rev. Solid StateMater. Sci. 14, S79-101 (1988).
18. L.S. Hounsome, R. Jones, P.M. Martineau, D. Fischer, M.J. Shaw, P.R. Briddon and S. Oberg, Phys. Rev. B 73, 125203 (2006).
19. H.K. Mao and R.J. Hemley, Nature, 351, 721 (1991).
20. Q. Liang, Y.F. Meng, C.S. Yan, J. Lai, S. Krasnicki, H.K. Mao, R.J. Hemley, Diamond Relat. Mater 18, 698 (2009).
Claims (12)
- 水素、炭素源及び酸素源を含む雰囲気中で、基板上でのダイヤモンドの堆積を起こすために十分な圧力及び温度において基板を提供し、マイクロ波プラズマ球を設定することを含む、マイクロ波プラズマ支援化学気相堆積によりダイヤモンドを製造する方法であって、前記ダイヤモンドを400torr超の圧力下で少なくとも200μm/時間の成長速度において実質的に窒素を含まない雰囲気から堆積させる方法。
- 水素、炭素源及び酸素源を含む雰囲気中で、基板上でのダイヤモンドの堆積を起こすために十分な圧力及び温度において基板を提供し、マイクロ波プラズマ球を設定することを含む、マイクロ波プラズマ支援化学気相堆積によりダイヤモンドを製造する方法であって、前記ダイヤモンドを400torr超の圧力下で少なくとも200μm/時間の成長速度において少量の窒素を含む雰囲気から堆積させる方法。
- 製造されたダイヤモンドが褐色を有し、前記ダイヤモンドをアニーリング工程に供して褐色を除去する、請求項2に記載の方法。
- 温度が約1000℃から約1500℃の範囲内である、請求項1に記載の方法。
- プラズマ密度が約10ワット/cm3から約10,000ワット/cm3の範囲内である、請求項1に記載の方法。
- ダイヤモンドを、3000から5000Wの出力源を使用して堆積させる、請求項1に記載の方法。
- ダイヤモンドを、5000W超の出力源を使用して堆積させる、請求項1に記載の方法。
- ダイヤモンドを、15kW超の出力源を使用して堆積させる、請求項7に記載の方法。
- ダイヤモンドを、75kW超の出力源を使用して堆積させる、請求項8に記載の方法。
- 前記基板の結晶配向が0〜15度オフ{100}である、請求項1に記載の方法。
- 雰囲気を堆積チャンバ内に含有させ、前記堆積チャンバの空気漏洩速度を0.003mtorr/分未満に制御する、請求項1に記載の方法。
- 前記プラズマを前記堆積チャンバ内の中心に配置させる、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11779308P | 2008-11-25 | 2008-11-25 | |
US61/117,793 | 2008-11-25 | ||
PCT/US2009/065657 WO2010068419A2 (en) | 2008-11-25 | 2009-11-24 | Production of single crystal cvd diamond rapid growth rate |
Publications (1)
Publication Number | Publication Date |
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JP2012509831A true JP2012509831A (ja) | 2012-04-26 |
Family
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JP2011537701A Pending JP2012509831A (ja) | 2008-11-25 | 2009-11-24 | 急速成長速度における単結晶cvdダイヤモンドの製造 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100126406A1 (ja) |
EP (1) | EP2376681B1 (ja) |
JP (1) | JP2012509831A (ja) |
AU (1) | AU2009324921A1 (ja) |
TW (1) | TW201035393A (ja) |
WO (1) | WO2010068419A2 (ja) |
Cited By (3)
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WO2014003110A1 (ja) * | 2012-06-29 | 2014-01-03 | 住友電気工業株式会社 | ダイヤモンド単結晶及びその製造方法並びに単結晶ダイヤモンド工具 |
JP2017055118A (ja) * | 2015-09-10 | 2017-03-16 | 国立研究開発法人産業技術総合研究所 | マイクロ波プラズマcvd装置、それを用いたダイヤモンドの合成方法及び合成されたダイヤモンド |
JP2021522367A (ja) * | 2018-04-24 | 2021-08-30 | ダイヤモンド イノヴェーションズ インコーポレイテッド | 発光ダイヤモンド材料およびそれを製造する方法 |
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KR20130009978A (ko) * | 2010-02-26 | 2013-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자의 제조 방법 및 성막 장치 |
TW201204863A (en) | 2010-05-17 | 2012-02-01 | Carnegie Inst Of Washington | Production of large, high purity single crystal CVD diamond |
GB201121642D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
CN104164659A (zh) * | 2014-08-08 | 2014-11-26 | 上海交通大学 | 一种无晶种精细单晶金刚石微粉的制备方法 |
DE102018120580A1 (de) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck |
CN113853363B (zh) * | 2019-01-16 | 2023-04-11 | 斯伦贝谢技术有限公司 | 发光金刚石 |
US11753740B2 (en) * | 2019-11-18 | 2023-09-12 | Shin-Etsu Chemical Co., Ltd. | Diamond substrate and method for manufacturing the same |
EP4093906A1 (en) * | 2020-01-20 | 2022-11-30 | M7D Corporation | Method of growing larger diamonds |
WO2021222097A1 (en) * | 2020-04-28 | 2021-11-04 | Board Of Trustees Of Michigan State University | Laser activated luminescence system |
WO2022054072A1 (en) * | 2020-09-13 | 2022-03-17 | Sigma Carbon Technologies | System for growth of crystalline material(s) |
CN113652746B (zh) * | 2021-10-21 | 2022-01-25 | 天津本钻科技有限公司 | 一种提高单晶金刚石质量的方法 |
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2009
- 2009-11-24 JP JP2011537701A patent/JP2012509831A/ja active Pending
- 2009-11-24 EP EP09832329.8A patent/EP2376681B1/en not_active Not-in-force
- 2009-11-24 WO PCT/US2009/065657 patent/WO2010068419A2/en active Application Filing
- 2009-11-24 AU AU2009324921A patent/AU2009324921A1/en not_active Abandoned
- 2009-11-24 US US12/624,768 patent/US20100126406A1/en not_active Abandoned
- 2009-11-25 TW TW098140106A patent/TW201035393A/zh unknown
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Also Published As
Publication number | Publication date |
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EP2376681A2 (en) | 2011-10-19 |
US20100126406A1 (en) | 2010-05-27 |
WO2010068419A3 (en) | 2010-09-02 |
TW201035393A (en) | 2010-10-01 |
AU2009324921A1 (en) | 2010-06-17 |
EP2376681A4 (en) | 2012-11-07 |
EP2376681B1 (en) | 2014-06-11 |
WO2010068419A2 (en) | 2010-06-17 |
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