GB2105107B - Semiconductor device and fabrication method thereof - Google Patents

Semiconductor device and fabrication method thereof

Info

Publication number
GB2105107B
GB2105107B GB08221354A GB8221354A GB2105107B GB 2105107 B GB2105107 B GB 2105107B GB 08221354 A GB08221354 A GB 08221354A GB 8221354 A GB8221354 A GB 8221354A GB 2105107 B GB2105107 B GB 2105107B
Authority
GB
United Kingdom
Prior art keywords
oxide film
bonding pad
aluminum
semiconductor device
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08221354A
Other languages
English (en)
Other versions
GB2105107A (en
Inventor
Tamotsu Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56115080A external-priority patent/JPS5817627A/ja
Priority claimed from JP56115082A external-priority patent/JPS5817629A/ja
Priority claimed from JP56115081A external-priority patent/JPS5817628A/ja
Priority claimed from JP56122994A external-priority patent/JPS5825241A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2105107A publication Critical patent/GB2105107A/en
Application granted granted Critical
Publication of GB2105107B publication Critical patent/GB2105107B/en
Priority to SG20186A priority Critical patent/SG20186G/en
Priority to SG18986A priority patent/SG18986G/en
Priority to MY364/87A priority patent/MY8700364A/xx
Expired legal-status Critical Current

Links

Classifications

    • H10W70/465
    • H10W72/019
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/45686Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H10W72/01515
    • H10W72/075
    • H10W72/07553
    • H10W72/531
    • H10W72/5363
    • H10W72/5449
    • H10W72/5524
    • H10W72/5525
    • H10W72/59
    • H10W72/884
    • H10W72/932
    • H10W72/934
    • H10W72/952
    • H10W72/983
    • H10W74/00
    • H10W90/736
    • H10W90/756

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB08221354A 1981-07-24 1982-07-23 Semiconductor device and fabrication method thereof Expired GB2105107B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG20186A SG20186G (en) 1981-07-24 1986-03-03 Semiconductor divice and fabrication method thereof
SG18986A SG18986G (en) 1981-07-24 1986-03-03 Semiconductor device and fabrication method thereof
MY364/87A MY8700364A (en) 1981-07-24 1987-12-30 Semiconductor device and fabrication method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP56115080A JPS5817627A (ja) 1981-07-24 1981-07-24 半導体集積回路装置およびその製造方法
JP56115082A JPS5817629A (ja) 1981-07-24 1981-07-24 半導体集積回路装置の製造方法
JP56115081A JPS5817628A (ja) 1981-07-24 1981-07-24 半導体集積回路装置およびその製造方法
JP56122994A JPS5825241A (ja) 1981-08-07 1981-08-07 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
GB2105107A GB2105107A (en) 1983-03-16
GB2105107B true GB2105107B (en) 1985-07-31

Family

ID=27470225

Family Applications (3)

Application Number Title Priority Date Filing Date
GB08221354A Expired GB2105107B (en) 1981-07-24 1982-07-23 Semiconductor device and fabrication method thereof
GB08402057A Expired GB2135121B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof
GB08402099A Expired GB2134709B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB08402057A Expired GB2135121B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof
GB08402099A Expired GB2134709B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof

Country Status (6)

Country Link
DE (1) DE3227606A1 (enExample)
FR (1) FR2510307A1 (enExample)
GB (3) GB2105107B (enExample)
HK (3) HK46686A (enExample)
IT (1) IT1152455B (enExample)
MY (2) MY8600558A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922852A (en) * 1986-10-30 1990-05-08 Nordson Corporation Apparatus for dispensing fluid materials
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
DE19736090B4 (de) * 1997-08-20 2005-04-14 Daimlerchrysler Ag Bauelement mit Schutzschicht und Verfahren zur Herstellung einer Schutzschicht für ein Bauelement
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
GB0018643D0 (en) * 2000-07-31 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices
CN101536184B (zh) 2006-11-13 2011-07-13 Nxp股份有限公司 焊盘结构和制造该焊盘结构的方法
CN110911353A (zh) * 2019-12-05 2020-03-24 上海华虹宏力半导体制造有限公司 形成导电互连线的方法
JP7305587B2 (ja) 2020-03-17 2023-07-10 株式会社東芝 半導体装置および検査装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1204619A (en) * 1915-04-23 1916-11-14 Enos C Verkler Garment-hanger.
US3741880A (en) * 1969-10-25 1973-06-26 Nippon Electric Co Method of forming electrical connections in a semiconductor integrated circuit
DE2243011C3 (de) * 1972-09-01 1982-04-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen eines Thermokompressionskontaktes
DE2403149A1 (de) * 1974-01-23 1975-07-24 Siemens Ag Halbleitervorrichtung
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS5651843A (en) * 1979-10-04 1981-05-09 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
GB8402057D0 (en) 1984-02-29
HK45886A (en) 1986-06-27
GB2134709B (en) 1985-07-31
GB2105107A (en) 1983-03-16
IT8222563A0 (it) 1982-07-23
GB8402099D0 (en) 1984-02-29
MY8700228A (en) 1987-12-31
FR2510307A1 (fr) 1983-01-28
HK46786A (en) 1986-06-27
GB2134709A (en) 1984-08-15
MY8600558A (en) 1986-12-31
FR2510307B1 (enExample) 1984-11-30
IT1152455B (it) 1986-12-31
HK46686A (en) 1986-06-27
DE3227606A1 (de) 1983-03-03
GB2135121A (en) 1984-08-22
GB2135121B (en) 1985-08-07

Similar Documents

Publication Publication Date Title
GB2105107B (en) Semiconductor device and fabrication method thereof
Usami Semiconductor Device and Fabrication Method Thereof
JPS52117551A (en) Semiconductor device
JPS57117255A (en) Semiconductor ic device
JPS5785240A (en) Semiconductor device
JPH02307247A (ja) 多層配線法
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS558061A (en) Semiconductor integrated circuit
JPS617638A (ja) 半導体装置
JPS61292947A (ja) 半導体装置
JPS6482656A (en) Sealing structure for hybrid integrated circuit
JPS54136186A (en) Semiconductor device
JPS6481236A (en) Semiconductor integrated circuit device
JPS5789276A (en) Photo chip element
JPS54107260A (en) Semiconductor device
JPS5447476A (en) Semiconductor device
JPS6457649A (en) Lead-out electrode structure
JPS56161655A (en) Multilayer aluminum wiring for semiconductor device
JPS5737858A (en) Manufacture of semiconductor device
JPS56108246A (en) Semiconductor device
JPS5718354A (en) Semiconductor integrated circuit
JPS6464339A (en) Semiconductor device
JPS5780719A (en) Semiconductor device
JPS55113368A (en) Semicondcutor device
JPS57169261A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940723