JPS617638A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS617638A
JPS617638A JP59128547A JP12854784A JPS617638A JP S617638 A JPS617638 A JP S617638A JP 59128547 A JP59128547 A JP 59128547A JP 12854784 A JP12854784 A JP 12854784A JP S617638 A JPS617638 A JP S617638A
Authority
JP
Japan
Prior art keywords
pad
metal wire
bonding pad
fine metal
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59128547A
Other languages
English (en)
Inventor
Takeshi Aoki
武 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP59128547A priority Critical patent/JPS617638A/ja
Publication of JPS617638A publication Critical patent/JPS617638A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発ＢＡは半導体装置、特にリード端子に金属細線で接
続される半導体チップ上の電極端子数シ出し部の構造に
関するものでおる０ （従来技術） 従来よシ一般に採用されている例えば半導体集積回路チ
ップの電極端子数シ出し部の構造を第２図に示す。ここ
で、半導体基材１上に形成された酸化物等の絶縁層２の
上にポンディングパッド３が設けられている。さらにこ
れらの上には金属細線が施される部分以外に表面保ｌ！
膜４が設けられている。そしてポンディングパッド３の
露出した部分に容器のリードとこのボンティングバッド
３とを接続するために金属細線５がボンティング法によ
シ接続されている〇 一般に上記ポンディングパッド３の厚さはおよそ１〜２
μ傭で表面保護膜４を形成する際に、ポンディングパッ
ド３の上面とそれ以外の表面保護膜との間にボンティン
グバッド３の厚さ分の１〜２μ龍程度の段差が生じる。
仮りに金属細線５ｔ−接着する時、前述した段差部分に
金属細線５があたると、そこに圧力が集中し、絶縁層２
に本然が生じ９例えば、半導体基材１とボンティングバ
ッド３との間で電気的導通や容器外部から内部への水分
等の侵入などが起り得る。この結果、半導体装置の機能
が停止してしまうことになる。
（発明が解決しようとする問題点ン 本発明の目的は以上のような不都合全解消し。
高信頼性の半導体装置を提供することにある。
（問題点を解決するための手段） 本発明によれば半導体基板の一部と電気的に接続される
ポンディングパッドの周りにこのポンディングパッドの
側面に密着しかつその厚さ以下の多結晶シリコン層を形
成し、さらにポンディングパッドの一部を除いた部分及
び多結晶シリコン層を覆う絶縁Ｍ全形成した半導体装ｔ
を得る。
（実施例） 以下、本発明の実施例を図面により詳述する。
第１図は本発明の−＊施例を示す集積回路における電極
端子取り出し部の断面図である。半導体基材１上に形成
された酸化物等の絶縁層２の上にボンティングバッド３
が設けられ更に側面に密着するように多結晶シリコン層
６が設けられでいる。
金属＃ｌａ５が施される部分以外に表面保護膜４がボン
ティングバッド３および多結晶シリコン層６の両者？覆
うように形成されている。そして、ボンダイングバッド
３の露出し次部分に容器のリードとこのボンダイングバ
ッド３とを接続するために金属細線５が接続される。
かかる構造にすることによシ、仮夛金属細線５がポンデ
ィングパッド３の露出した部分とそれ以外の部分にまた
がって接着されたとしても、先に説明した表面保護膜４
の段差が従来の構造のものよＱ確実に小さくな見かっ多
結晶シリコン層６が金属細線５を接着する際の圧力を吸
収し、前述した欠点を解消し得る。
また、ポンディングパッド周囲に配する多結晶シリコン
層６は配線あるいは抵抗としても活用でき工程を増やす
ことなく容易に使用できる利点もある。
（発明の効果） このように１本発明によれば、絶縁膜層４は安全を保た
れ、高信頼度半導体集積回路装置が実現することができ
る。
【図面の簡単な説明】
第１図は本発明の一実施例によるポンディングパッド部
の断面図、第２図は従来のポンディングパッド部の断面
図である。 １・・・半導体基材、２・・・絶縁膜、３・・・ポンデ
ィングパッド、４・・・表面保護膜、５・・・金属細線
、６・・・多結晶シリコン層 篤１図 誇２図

Claims (1)

    【特許請求の範囲】
  1. 半導体基板の一部と電気的に接続された導体層の周りに
    前記導体層の側面に接しかつ前記導体層の厚さ以下の多
    結晶シリコン層を有し、前記導体層の上面の一部を除い
    た部分及び前記多結晶シリコン層を覆う絶縁膜を有する
    ことを特徴とする半導体装置。
JP59128547A 1984-06-22 1984-06-22 半導体装置 Pending JPS617638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59128547A JPS617638A (ja) 1984-06-22 1984-06-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59128547A JPS617638A (ja) 1984-06-22 1984-06-22 半導体装置

Publications (1)

Publication Number Publication Date
JPS617638A true JPS617638A (ja) 1986-01-14

Family

ID=14987452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59128547A Pending JPS617638A (ja) 1984-06-22 1984-06-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS617638A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268943A (ja) * 1988-09-02 1990-03-08 Matsushita Electron Corp 半導体装置
US5891745A (en) * 1994-10-28 1999-04-06 Honeywell Inc. Test and tear-away bond pad design
JP2003056630A (ja) * 2001-08-14 2003-02-26 Kayaba Ind Co Ltd ガススプリングのカバー体構造

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268943A (ja) * 1988-09-02 1990-03-08 Matsushita Electron Corp 半導体装置
US5891745A (en) * 1994-10-28 1999-04-06 Honeywell Inc. Test and tear-away bond pad design
JP2003056630A (ja) * 2001-08-14 2003-02-26 Kayaba Ind Co Ltd ガススプリングのカバー体構造

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