GB2105107B - Semiconductor device and fabrication method thereof - Google Patents
Semiconductor device and fabrication method thereofInfo
- Publication number
- GB2105107B GB2105107B GB08221354A GB8221354A GB2105107B GB 2105107 B GB2105107 B GB 2105107B GB 08221354 A GB08221354 A GB 08221354A GB 8221354 A GB8221354 A GB 8221354A GB 2105107 B GB2105107 B GB 2105107B
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxide film
- bonding pad
- aluminum
- semiconductor device
- aluminum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A semiconductor device, in which, in order to prevent both a wiring layer (81) including a bonding pad (6, 80) of aluminum and a bonding wire (10) from corroding, the aluminium material has formed on its surface an aluminum oxide film (90, 12, 13). In the semiconductor device disclosed, a first aluminum oxide film (90, 91) is formed on the surface of an upper aluminum wiring (80, 81) underlying a final passivation film (27), and a second aluminum oxide film (12,13) is formed on both an exposed surface of a bonding pad (80) and the surface of a bonding wire (10). In order to ensure the high quality of the second aluminum oxide film (12, 13), the materials of the bonding pad and the bonding wire are made to have an identical ionization tendency, or all leads are short-circuited when the oxidization for the second oxide film is conducted. In order that electrical connection to the bonding pad may not be broken during the oxidization of the second oxide film, moreover, the bonding pad is made to have a stacked construction of two aluminum layers (6, 80). <IMAGE>
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG18986A SG18986G (en) | 1981-07-24 | 1986-03-03 | Semiconductor device and fabrication method thereof |
SG20186A SG20186G (en) | 1981-07-24 | 1986-03-03 | Semiconductor divice and fabrication method thereof |
MY364/87A MY8700364A (en) | 1981-07-24 | 1987-12-30 | Semiconductor device and fabrication method thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56115082A JPS5817629A (en) | 1981-07-24 | 1981-07-24 | Manufacture of semiconductor integrated circuit device |
JP56115081A JPS5817628A (en) | 1981-07-24 | 1981-07-24 | Semiconductor integrated circuit device and manufacture thereof |
JP56115080A JPS5817627A (en) | 1981-07-24 | 1981-07-24 | Semiconductor integrated circuit device and manufacture thereof |
JP56122994A JPS5825241A (en) | 1981-08-07 | 1981-08-07 | Manufacture of semiconductor i.c. device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2105107A GB2105107A (en) | 1983-03-16 |
GB2105107B true GB2105107B (en) | 1985-07-31 |
Family
ID=27470225
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08221354A Expired GB2105107B (en) | 1981-07-24 | 1982-07-23 | Semiconductor device and fabrication method thereof |
GB08402099A Expired GB2134709B (en) | 1981-07-24 | 1984-01-26 | Semiconductor device and fabrication method thereof |
GB08402057A Expired GB2135121B (en) | 1981-07-24 | 1984-01-26 | Semiconductor device and fabrication method thereof |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08402099A Expired GB2134709B (en) | 1981-07-24 | 1984-01-26 | Semiconductor device and fabrication method thereof |
GB08402057A Expired GB2135121B (en) | 1981-07-24 | 1984-01-26 | Semiconductor device and fabrication method thereof |
Country Status (6)
Country | Link |
---|---|
DE (1) | DE3227606A1 (en) |
FR (1) | FR2510307A1 (en) |
GB (3) | GB2105107B (en) |
HK (3) | HK46786A (en) |
IT (1) | IT1152455B (en) |
MY (2) | MY8600558A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4922852A (en) * | 1986-10-30 | 1990-05-08 | Nordson Corporation | Apparatus for dispensing fluid materials |
JP2598328B2 (en) * | 1989-10-17 | 1997-04-09 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
DE19736090B4 (en) * | 1997-08-20 | 2005-04-14 | Daimlerchrysler Ag | Protective layer device and method for producing a protective layer for a device |
EP1188182B1 (en) * | 1999-05-31 | 2012-08-22 | Infineon Technologies AG | A method of assembling a semiconductor device package |
GB0018643D0 (en) * | 2000-07-31 | 2000-09-13 | Koninkl Philips Electronics Nv | Semiconductor devices |
WO2008059433A1 (en) * | 2006-11-13 | 2008-05-22 | Nxp B.V. | Bond pad structure and method for producing same |
CN110911353A (en) * | 2019-12-05 | 2020-03-24 | 上海华虹宏力半导体制造有限公司 | Method for forming conductive interconnection line |
JP7305587B2 (en) | 2020-03-17 | 2023-07-10 | 株式会社東芝 | Semiconductor equipment and inspection equipment |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1204619A (en) * | 1915-04-23 | 1916-11-14 | Enos C Verkler | Garment-hanger. |
US3741880A (en) * | 1969-10-25 | 1973-06-26 | Nippon Electric Co | Method of forming electrical connections in a semiconductor integrated circuit |
DE2243011C3 (en) * | 1972-09-01 | 1982-04-01 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Method for producing a thermocompression contact |
DE2403149A1 (en) * | 1974-01-23 | 1975-07-24 | Siemens Ag | Semiconductor device with protective silica-based film - including mixture or cpd. of silica and alumina |
JPS5851425B2 (en) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | Hand tie souchi |
JPS52117551A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Semiconductor device |
US4433004A (en) * | 1979-07-11 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
JPS5651843A (en) * | 1979-10-04 | 1981-05-09 | Mitsubishi Electric Corp | Semiconductor device |
-
1982
- 1982-07-05 FR FR8211728A patent/FR2510307A1/en active Granted
- 1982-07-23 IT IT22563/82A patent/IT1152455B/en active
- 1982-07-23 GB GB08221354A patent/GB2105107B/en not_active Expired
- 1982-07-23 DE DE19823227606 patent/DE3227606A1/en not_active Withdrawn
-
1984
- 1984-01-26 GB GB08402099A patent/GB2134709B/en not_active Expired
- 1984-01-26 GB GB08402057A patent/GB2135121B/en not_active Expired
-
1986
- 1986-06-19 HK HK467/86A patent/HK46786A/en unknown
- 1986-06-19 HK HK458/86A patent/HK45886A/en unknown
- 1986-06-19 HK HK466/86A patent/HK46686A/en unknown
- 1986-12-30 MY MY558/86A patent/MY8600558A/en unknown
-
1987
- 1987-12-31 MY MY1987228A patent/MY8700228A/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB2135121B (en) | 1985-08-07 |
GB2134709B (en) | 1985-07-31 |
GB2134709A (en) | 1984-08-15 |
GB2105107A (en) | 1983-03-16 |
FR2510307A1 (en) | 1983-01-28 |
GB8402057D0 (en) | 1984-02-29 |
GB2135121A (en) | 1984-08-22 |
HK46686A (en) | 1986-06-27 |
MY8700228A (en) | 1987-12-31 |
IT8222563A0 (en) | 1982-07-23 |
MY8600558A (en) | 1986-12-31 |
DE3227606A1 (en) | 1983-03-03 |
FR2510307B1 (en) | 1984-11-30 |
HK45886A (en) | 1986-06-27 |
HK46786A (en) | 1986-06-27 |
GB8402099D0 (en) | 1984-02-29 |
IT1152455B (en) | 1986-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940723 |