GB2105107B - Semiconductor device and fabrication method thereof - Google Patents

Semiconductor device and fabrication method thereof

Info

Publication number
GB2105107B
GB2105107B GB08221354A GB8221354A GB2105107B GB 2105107 B GB2105107 B GB 2105107B GB 08221354 A GB08221354 A GB 08221354A GB 8221354 A GB8221354 A GB 8221354A GB 2105107 B GB2105107 B GB 2105107B
Authority
GB
United Kingdom
Prior art keywords
oxide film
bonding pad
aluminum
semiconductor device
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08221354A
Other versions
GB2105107A (en
Inventor
Tamotsu Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56115082A external-priority patent/JPS5817629A/en
Priority claimed from JP56115081A external-priority patent/JPS5817628A/en
Priority claimed from JP56115080A external-priority patent/JPS5817627A/en
Priority claimed from JP56122994A external-priority patent/JPS5825241A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2105107A publication Critical patent/GB2105107A/en
Application granted granted Critical
Publication of GB2105107B publication Critical patent/GB2105107B/en
Priority to SG18986A priority Critical patent/SG18986G/en
Priority to SG20186A priority patent/SG20186G/en
Priority to MY364/87A priority patent/MY8700364A/en
Expired legal-status Critical Current

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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/4952Additional leads the additional leads being a bump or a wire
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor device, in which, in order to prevent both a wiring layer (81) including a bonding pad (6, 80) of aluminum and a bonding wire (10) from corroding, the aluminium material has formed on its surface an aluminum oxide film (90, 12, 13). In the semiconductor device disclosed, a first aluminum oxide film (90, 91) is formed on the surface of an upper aluminum wiring (80, 81) underlying a final passivation film (27), and a second aluminum oxide film (12,13) is formed on both an exposed surface of a bonding pad (80) and the surface of a bonding wire (10). In order to ensure the high quality of the second aluminum oxide film (12, 13), the materials of the bonding pad and the bonding wire are made to have an identical ionization tendency, or all leads are short-circuited when the oxidization for the second oxide film is conducted. In order that electrical connection to the bonding pad may not be broken during the oxidization of the second oxide film, moreover, the bonding pad is made to have a stacked construction of two aluminum layers (6, 80). <IMAGE>
GB08221354A 1981-07-24 1982-07-23 Semiconductor device and fabrication method thereof Expired GB2105107B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG18986A SG18986G (en) 1981-07-24 1986-03-03 Semiconductor device and fabrication method thereof
SG20186A SG20186G (en) 1981-07-24 1986-03-03 Semiconductor divice and fabrication method thereof
MY364/87A MY8700364A (en) 1981-07-24 1987-12-30 Semiconductor device and fabrication method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP56115082A JPS5817629A (en) 1981-07-24 1981-07-24 Manufacture of semiconductor integrated circuit device
JP56115081A JPS5817628A (en) 1981-07-24 1981-07-24 Semiconductor integrated circuit device and manufacture thereof
JP56115080A JPS5817627A (en) 1981-07-24 1981-07-24 Semiconductor integrated circuit device and manufacture thereof
JP56122994A JPS5825241A (en) 1981-08-07 1981-08-07 Manufacture of semiconductor i.c. device

Publications (2)

Publication Number Publication Date
GB2105107A GB2105107A (en) 1983-03-16
GB2105107B true GB2105107B (en) 1985-07-31

Family

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GB08221354A Expired GB2105107B (en) 1981-07-24 1982-07-23 Semiconductor device and fabrication method thereof
GB08402099A Expired GB2134709B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof
GB08402057A Expired GB2135121B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof

Family Applications After (2)

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GB08402099A Expired GB2134709B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof
GB08402057A Expired GB2135121B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof

Country Status (6)

Country Link
DE (1) DE3227606A1 (en)
FR (1) FR2510307A1 (en)
GB (3) GB2105107B (en)
HK (3) HK46786A (en)
IT (1) IT1152455B (en)
MY (2) MY8600558A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922852A (en) * 1986-10-30 1990-05-08 Nordson Corporation Apparatus for dispensing fluid materials
JP2598328B2 (en) * 1989-10-17 1997-04-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
DE19736090B4 (en) * 1997-08-20 2005-04-14 Daimlerchrysler Ag Protective layer device and method for producing a protective layer for a device
EP1188182B1 (en) * 1999-05-31 2012-08-22 Infineon Technologies AG A method of assembling a semiconductor device package
GB0018643D0 (en) * 2000-07-31 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices
WO2008059433A1 (en) * 2006-11-13 2008-05-22 Nxp B.V. Bond pad structure and method for producing same
CN110911353A (en) * 2019-12-05 2020-03-24 上海华虹宏力半导体制造有限公司 Method for forming conductive interconnection line
JP7305587B2 (en) 2020-03-17 2023-07-10 株式会社東芝 Semiconductor equipment and inspection equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1204619A (en) * 1915-04-23 1916-11-14 Enos C Verkler Garment-hanger.
US3741880A (en) * 1969-10-25 1973-06-26 Nippon Electric Co Method of forming electrical connections in a semiconductor integrated circuit
DE2243011C3 (en) * 1972-09-01 1982-04-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Method for producing a thermocompression contact
DE2403149A1 (en) * 1974-01-23 1975-07-24 Siemens Ag Semiconductor device with protective silica-based film - including mixture or cpd. of silica and alumina
JPS5851425B2 (en) * 1975-08-22 1983-11-16 株式会社日立製作所 Hand tie souchi
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS5651843A (en) * 1979-10-04 1981-05-09 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
GB2135121B (en) 1985-08-07
GB2134709B (en) 1985-07-31
GB2134709A (en) 1984-08-15
GB2105107A (en) 1983-03-16
FR2510307A1 (en) 1983-01-28
GB8402057D0 (en) 1984-02-29
GB2135121A (en) 1984-08-22
HK46686A (en) 1986-06-27
MY8700228A (en) 1987-12-31
IT8222563A0 (en) 1982-07-23
MY8600558A (en) 1986-12-31
DE3227606A1 (en) 1983-03-03
FR2510307B1 (en) 1984-11-30
HK45886A (en) 1986-06-27
HK46786A (en) 1986-06-27
GB8402099D0 (en) 1984-02-29
IT1152455B (en) 1986-12-31

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