FR2510307A1 - Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif - Google Patents
Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif Download PDFInfo
- Publication number
- FR2510307A1 FR2510307A1 FR8211728A FR8211728A FR2510307A1 FR 2510307 A1 FR2510307 A1 FR 2510307A1 FR 8211728 A FR8211728 A FR 8211728A FR 8211728 A FR8211728 A FR 8211728A FR 2510307 A1 FR2510307 A1 FR 2510307A1
- Authority
- FR
- France
- Prior art keywords
- aluminum
- film
- aluminum oxide
- layer
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H10W70/465—
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- H10W72/019—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/45686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H10W72/01515—
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- H10W72/075—
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- H10W72/07553—
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- H10W72/531—
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- H10W72/5363—
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- H10W72/5449—
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- H10W72/5524—
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- H10W72/5525—
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- H10W72/59—
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- H10W72/884—
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- H10W72/932—
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- H10W72/934—
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- H10W72/952—
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- H10W72/983—
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- H10W74/00—
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- H10W90/736—
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- H10W90/756—
Landscapes
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56115080A JPS5817627A (ja) | 1981-07-24 | 1981-07-24 | 半導体集積回路装置およびその製造方法 |
| JP56115082A JPS5817629A (ja) | 1981-07-24 | 1981-07-24 | 半導体集積回路装置の製造方法 |
| JP56115081A JPS5817628A (ja) | 1981-07-24 | 1981-07-24 | 半導体集積回路装置およびその製造方法 |
| JP56122994A JPS5825241A (ja) | 1981-08-07 | 1981-08-07 | 半導体集積回路装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2510307A1 true FR2510307A1 (fr) | 1983-01-28 |
| FR2510307B1 FR2510307B1 (enExample) | 1984-11-30 |
Family
ID=27470225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8211728A Granted FR2510307A1 (fr) | 1981-07-24 | 1982-07-05 | Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif |
Country Status (6)
| Country | Link |
|---|---|
| DE (1) | DE3227606A1 (enExample) |
| FR (1) | FR2510307A1 (enExample) |
| GB (3) | GB2105107B (enExample) |
| HK (3) | HK46686A (enExample) |
| IT (1) | IT1152455B (enExample) |
| MY (2) | MY8600558A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008059433A1 (en) * | 2006-11-13 | 2008-05-22 | Nxp B.V. | Bond pad structure and method for producing same |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922852A (en) * | 1986-10-30 | 1990-05-08 | Nordson Corporation | Apparatus for dispensing fluid materials |
| JP2598328B2 (ja) * | 1989-10-17 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE19736090B4 (de) * | 1997-08-20 | 2005-04-14 | Daimlerchrysler Ag | Bauelement mit Schutzschicht und Verfahren zur Herstellung einer Schutzschicht für ein Bauelement |
| WO2000074131A1 (en) * | 1999-05-31 | 2000-12-07 | Infineon Technologies A.G. | A method of assembling a semiconductor device package |
| GB0018643D0 (en) * | 2000-07-31 | 2000-09-13 | Koninkl Philips Electronics Nv | Semiconductor devices |
| CN110911353A (zh) * | 2019-12-05 | 2020-03-24 | 上海华虹宏力半导体制造有限公司 | 形成导电互连线的方法 |
| JP7305587B2 (ja) | 2020-03-17 | 2023-07-10 | 株式会社東芝 | 半導体装置および検査装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2198264A1 (enExample) * | 1972-09-01 | 1974-03-29 | Itt | |
| JPS52117551A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Semiconductor device |
| DE3026026A1 (de) * | 1979-07-11 | 1981-01-22 | Tokyo Shibaura Electric Co | Halbleiterelement und verfahren zu seiner herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1204619A (en) * | 1915-04-23 | 1916-11-14 | Enos C Verkler | Garment-hanger. |
| US3741880A (en) * | 1969-10-25 | 1973-06-26 | Nippon Electric Co | Method of forming electrical connections in a semiconductor integrated circuit |
| DE2403149A1 (de) * | 1974-01-23 | 1975-07-24 | Siemens Ag | Halbleitervorrichtung |
| JPS5851425B2 (ja) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | ハンドウタイソウチ |
| JPS5651843A (en) * | 1979-10-04 | 1981-05-09 | Mitsubishi Electric Corp | Semiconductor device |
-
1982
- 1982-07-05 FR FR8211728A patent/FR2510307A1/fr active Granted
- 1982-07-23 IT IT22563/82A patent/IT1152455B/it active
- 1982-07-23 GB GB08221354A patent/GB2105107B/en not_active Expired
- 1982-07-23 DE DE19823227606 patent/DE3227606A1/de not_active Withdrawn
-
1984
- 1984-01-26 GB GB08402057A patent/GB2135121B/en not_active Expired
- 1984-01-26 GB GB08402099A patent/GB2134709B/en not_active Expired
-
1986
- 1986-06-19 HK HK466/86A patent/HK46686A/xx unknown
- 1986-06-19 HK HK458/86A patent/HK45886A/xx unknown
- 1986-06-19 HK HK467/86A patent/HK46786A/xx unknown
- 1986-12-30 MY MY558/86A patent/MY8600558A/xx unknown
-
1987
- 1987-12-31 MY MY1987228A patent/MY8700228A/xx unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2198264A1 (enExample) * | 1972-09-01 | 1974-03-29 | Itt | |
| JPS52117551A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Semiconductor device |
| DE3026026A1 (de) * | 1979-07-11 | 1981-01-22 | Tokyo Shibaura Electric Co | Halbleiterelement und verfahren zu seiner herstellung |
Non-Patent Citations (1)
| Title |
|---|
| Patent Abstracts of Japan Vol. 2, no. 3, 10 janvier 1978 Page 9735E77 & JP-A-52-117551 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008059433A1 (en) * | 2006-11-13 | 2008-05-22 | Nxp B.V. | Bond pad structure and method for producing same |
| US8169084B2 (en) | 2006-11-13 | 2012-05-01 | Nxp B.V. | Bond pad structure and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8402057D0 (en) | 1984-02-29 |
| HK45886A (en) | 1986-06-27 |
| GB2134709B (en) | 1985-07-31 |
| GB2105107A (en) | 1983-03-16 |
| IT8222563A0 (it) | 1982-07-23 |
| GB8402099D0 (en) | 1984-02-29 |
| MY8700228A (en) | 1987-12-31 |
| HK46786A (en) | 1986-06-27 |
| GB2134709A (en) | 1984-08-15 |
| MY8600558A (en) | 1986-12-31 |
| FR2510307B1 (enExample) | 1984-11-30 |
| IT1152455B (it) | 1986-12-31 |
| GB2105107B (en) | 1985-07-31 |
| HK46686A (en) | 1986-06-27 |
| DE3227606A1 (de) | 1983-03-03 |
| GB2135121A (en) | 1984-08-22 |
| GB2135121B (en) | 1985-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |