FR2510307A1 - Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif - Google Patents

Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif Download PDF

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Publication number
FR2510307A1
FR2510307A1 FR8211728A FR8211728A FR2510307A1 FR 2510307 A1 FR2510307 A1 FR 2510307A1 FR 8211728 A FR8211728 A FR 8211728A FR 8211728 A FR8211728 A FR 8211728A FR 2510307 A1 FR2510307 A1 FR 2510307A1
Authority
FR
France
Prior art keywords
aluminum
film
aluminum oxide
layer
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8211728A
Other languages
English (en)
French (fr)
Other versions
FR2510307B1 (enExample
Inventor
Tamotsu Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56115080A external-priority patent/JPS5817627A/ja
Priority claimed from JP56115082A external-priority patent/JPS5817629A/ja
Priority claimed from JP56115081A external-priority patent/JPS5817628A/ja
Priority claimed from JP56122994A external-priority patent/JPS5825241A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2510307A1 publication Critical patent/FR2510307A1/fr
Application granted granted Critical
Publication of FR2510307B1 publication Critical patent/FR2510307B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W70/465
    • H10W72/019
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/45686Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H10W72/01515
    • H10W72/075
    • H10W72/07553
    • H10W72/531
    • H10W72/5363
    • H10W72/5449
    • H10W72/5524
    • H10W72/5525
    • H10W72/59
    • H10W72/884
    • H10W72/932
    • H10W72/934
    • H10W72/952
    • H10W72/983
    • H10W74/00
    • H10W90/736
    • H10W90/756

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR8211728A 1981-07-24 1982-07-05 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif Granted FR2510307A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP56115080A JPS5817627A (ja) 1981-07-24 1981-07-24 半導体集積回路装置およびその製造方法
JP56115082A JPS5817629A (ja) 1981-07-24 1981-07-24 半導体集積回路装置の製造方法
JP56115081A JPS5817628A (ja) 1981-07-24 1981-07-24 半導体集積回路装置およびその製造方法
JP56122994A JPS5825241A (ja) 1981-08-07 1981-08-07 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
FR2510307A1 true FR2510307A1 (fr) 1983-01-28
FR2510307B1 FR2510307B1 (enExample) 1984-11-30

Family

ID=27470225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8211728A Granted FR2510307A1 (fr) 1981-07-24 1982-07-05 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

Country Status (6)

Country Link
DE (1) DE3227606A1 (enExample)
FR (1) FR2510307A1 (enExample)
GB (3) GB2105107B (enExample)
HK (3) HK46686A (enExample)
IT (1) IT1152455B (enExample)
MY (2) MY8600558A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008059433A1 (en) * 2006-11-13 2008-05-22 Nxp B.V. Bond pad structure and method for producing same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922852A (en) * 1986-10-30 1990-05-08 Nordson Corporation Apparatus for dispensing fluid materials
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
DE19736090B4 (de) * 1997-08-20 2005-04-14 Daimlerchrysler Ag Bauelement mit Schutzschicht und Verfahren zur Herstellung einer Schutzschicht für ein Bauelement
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
GB0018643D0 (en) * 2000-07-31 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices
CN110911353A (zh) * 2019-12-05 2020-03-24 上海华虹宏力半导体制造有限公司 形成导电互连线的方法
JP7305587B2 (ja) 2020-03-17 2023-07-10 株式会社東芝 半導体装置および検査装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2198264A1 (enExample) * 1972-09-01 1974-03-29 Itt
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
DE3026026A1 (de) * 1979-07-11 1981-01-22 Tokyo Shibaura Electric Co Halbleiterelement und verfahren zu seiner herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1204619A (en) * 1915-04-23 1916-11-14 Enos C Verkler Garment-hanger.
US3741880A (en) * 1969-10-25 1973-06-26 Nippon Electric Co Method of forming electrical connections in a semiconductor integrated circuit
DE2403149A1 (de) * 1974-01-23 1975-07-24 Siemens Ag Halbleitervorrichtung
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
JPS5651843A (en) * 1979-10-04 1981-05-09 Mitsubishi Electric Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2198264A1 (enExample) * 1972-09-01 1974-03-29 Itt
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
DE3026026A1 (de) * 1979-07-11 1981-01-22 Tokyo Shibaura Electric Co Halbleiterelement und verfahren zu seiner herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan Vol. 2, no. 3, 10 janvier 1978 Page 9735E77 & JP-A-52-117551 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008059433A1 (en) * 2006-11-13 2008-05-22 Nxp B.V. Bond pad structure and method for producing same
US8169084B2 (en) 2006-11-13 2012-05-01 Nxp B.V. Bond pad structure and method for producing same

Also Published As

Publication number Publication date
GB8402057D0 (en) 1984-02-29
HK45886A (en) 1986-06-27
GB2134709B (en) 1985-07-31
GB2105107A (en) 1983-03-16
IT8222563A0 (it) 1982-07-23
GB8402099D0 (en) 1984-02-29
MY8700228A (en) 1987-12-31
HK46786A (en) 1986-06-27
GB2134709A (en) 1984-08-15
MY8600558A (en) 1986-12-31
FR2510307B1 (enExample) 1984-11-30
IT1152455B (it) 1986-12-31
GB2105107B (en) 1985-07-31
HK46686A (en) 1986-06-27
DE3227606A1 (de) 1983-03-03
GB2135121A (en) 1984-08-22
GB2135121B (en) 1985-08-07

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