GB1526503A - Integrated circuit device including both n-channel and p-channel insulated gate field effect transistors - Google Patents

Integrated circuit device including both n-channel and p-channel insulated gate field effect transistors

Info

Publication number
GB1526503A
GB1526503A GB22962/76A GB2296276A GB1526503A GB 1526503 A GB1526503 A GB 1526503A GB 22962/76 A GB22962/76 A GB 22962/76A GB 2296276 A GB2296276 A GB 2296276A GB 1526503 A GB1526503 A GB 1526503A
Authority
GB
United Kingdom
Prior art keywords
channel
insulated gate
integrated circuit
gate
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22962/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1526503A publication Critical patent/GB1526503A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
GB22962/76A 1975-06-11 1976-06-03 Integrated circuit device including both n-channel and p-channel insulated gate field effect transistors Expired GB1526503A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (1)

Publication Number Publication Date
GB1526503A true GB1526503A (en) 1978-09-27

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22962/76A Expired GB1526503A (en) 1975-06-11 1976-06-03 Integrated circuit device including both n-channel and p-channel insulated gate field effect transistors

Country Status (15)

Country Link
JP (1) JPS5234677A (de)
AU (1) AU497683B2 (de)
BE (1) BE842774A (de)
BR (1) BR7603615A (de)
CA (1) CA1057413A (de)
CH (1) CH620049A5 (de)
DE (1) DE2625576A1 (de)
FR (1) FR2314583A1 (de)
GB (1) GB1526503A (de)
HU (1) HU175524B (de)
IN (1) IN144541B (de)
IT (1) IT1079501B (de)
NL (1) NL7606272A (de)
SE (1) SE416599B (de)
YU (1) YU139376A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126785A (en) * 1982-09-03 1984-03-28 Western Electric Co Mos transistor integrated circuit with apertured contact sheets

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (de) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
FR2129827B1 (de) * 1971-03-15 1976-09-03 Gen Electric
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (de) * 1972-05-15 1980-09-17
JPS4921080A (de) * 1972-06-15 1974-02-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126785A (en) * 1982-09-03 1984-03-28 Western Electric Co Mos transistor integrated circuit with apertured contact sheets

Also Published As

Publication number Publication date
SE416599B (sv) 1981-01-19
JPS5234677A (en) 1977-03-16
JPS574105B2 (de) 1982-01-25
AU497683B2 (en) 1978-12-21
CA1057413A (en) 1979-06-26
FR2314583B1 (de) 1982-09-17
CH620049A5 (en) 1980-10-31
BE842774A (nl) 1976-10-01
DE2625576A1 (de) 1976-12-30
HU175524B (hu) 1980-08-28
AU1467576A (en) 1977-12-15
YU139376A (en) 1983-04-27
BR7603615A (pt) 1977-02-01
NL7606272A (nl) 1976-12-14
SE7606368L (sv) 1976-12-12
IN144541B (de) 1978-05-13
IT1079501B (it) 1985-05-13
FR2314583A1 (fr) 1977-01-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19960602