HU175524B - Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy - Google Patents

Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy

Info

Publication number
HU175524B
HU175524B HU76RA647A HURA000647A HU175524B HU 175524 B HU175524 B HU 175524B HU 76RA647 A HU76RA647 A HU 76RA647A HU RA000647 A HURA000647 A HU RA000647A HU 175524 B HU175524 B HU 175524B
Authority
HU
Hungary
Prior art keywords
integrated circuit
circuit device
channel
make
isolated gate
Prior art date
Application number
HU76RA647A
Other languages
English (en)
Hungarian (hu)
Inventor
Andrew G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of HU175524B publication Critical patent/HU175524B/hu

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
HU76RA647A 1975-06-11 1976-06-10 Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy HU175524B (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (1)

Publication Number Publication Date
HU175524B true HU175524B (hu) 1980-08-28

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
HU76RA647A HU175524B (hu) 1975-06-11 1976-06-10 Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy

Country Status (15)

Country Link
JP (1) JPS5234677A (de)
AU (1) AU497683B2 (de)
BE (1) BE842774A (de)
BR (1) BR7603615A (de)
CA (1) CA1057413A (de)
CH (1) CH620049A5 (de)
DE (1) DE2625576A1 (de)
FR (1) FR2314583A1 (de)
GB (1) GB1526503A (de)
HU (1) HU175524B (de)
IN (1) IN144541B (de)
IT (1) IT1079501B (de)
NL (1) NL7606272A (de)
SE (1) SE416599B (de)
YU (1) YU139376A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (de) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
FR2129827B1 (de) * 1971-03-15 1976-09-03 Gen Electric
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (de) * 1972-05-15 1980-09-17
JPS4921080A (de) * 1972-06-15 1974-02-25

Also Published As

Publication number Publication date
AU1467576A (en) 1977-12-15
FR2314583A1 (fr) 1977-01-07
IN144541B (de) 1978-05-13
CA1057413A (en) 1979-06-26
FR2314583B1 (de) 1982-09-17
JPS5234677A (en) 1977-03-16
IT1079501B (it) 1985-05-13
BE842774A (nl) 1976-10-01
CH620049A5 (en) 1980-10-31
AU497683B2 (en) 1978-12-21
YU139376A (en) 1983-04-27
BR7603615A (pt) 1977-02-01
DE2625576A1 (de) 1976-12-30
SE7606368L (sv) 1976-12-12
NL7606272A (nl) 1976-12-14
JPS574105B2 (de) 1982-01-25
SE416599B (sv) 1981-01-19
GB1526503A (en) 1978-09-27

Similar Documents

Publication Publication Date Title
JPS51135382A (en) Mos transistor
GB1556276A (en) Insulated gate field effect transistors
JPS5239381A (en) Insulated gate fet transistor
JPS5266360A (en) Delay circuit using fet transistor
JPS5232281A (en) Mosfet transistor
JPS53105949A (en) Mos transistor output circuit
GB1543227A (en) Field effect transistor circuits
JPS55158675A (en) High piezooelectric mos field effect transistor
SE7605956L (sv) Halsag med tappborr
GB2052858B (en) Method of making field effect transistors with short gates
GB1552729A (en) N-channel storage field-effect transistors
GB1556169A (en) Transistor logic circuits
IT1058422B (it) Invertitore omos contenente due transistori mos complementari
HU175524B (hu) Integral'naja skhema s polevymi tranzistorami, imejuhhimi n i p kanal'nye izolirovannye strobirujuhhie ehlektrody, a tak zhe sposob izgotovlenija dannoj integral'noj skhemy
DE3071046D1 (en) An insulated gate field effect transistor
GB2084794B (en) Methods of manufacturing insulated gate field effect transistors
JPS5270317A (en) Transistor circuit
GB1543132A (en) Field-effect transistors
JPS51111042A (en) Gate circuit
GB2095901B (en) An mos transistor
JPS5275987A (en) Gate protecting device
DE3060914D1 (en) Multiple-drain mos transistor logic gates
GB1347782A (en) Integrated circuits comprising mos transistors obtained by ion implanation
JPS5250172A (en) Improvement of fet transistor
JPS5192186A (en) mos shusekikairono seizohoho