GB1310188A - Production of silicon nitride masking layerss by etching - Google Patents

Production of silicon nitride masking layerss by etching

Info

Publication number
GB1310188A
GB1310188A GB2166871A GB2166871A GB1310188A GB 1310188 A GB1310188 A GB 1310188A GB 2166871 A GB2166871 A GB 2166871A GB 2166871 A GB2166871 A GB 2166871A GB 1310188 A GB1310188 A GB 1310188A
Authority
GB
United Kingdom
Prior art keywords
silicon nitride
etching
layerss
production
nitride masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2166871A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1310188A publication Critical patent/GB1310188A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
GB2166871A 1970-02-19 1971-04-19 Production of silicon nitride masking layerss by etching Expired GB1310188A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007693 DE2007693B2 (de) 1970-02-19 1970-02-19 Verfahren zum lokalen abaetzen einer auf einem halbleiterkoerper aufgebrachten siliciumnitridschicht

Publications (1)

Publication Number Publication Date
GB1310188A true GB1310188A (en) 1973-03-14

Family

ID=5762752

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2166871A Expired GB1310188A (en) 1970-02-19 1971-04-19 Production of silicon nitride masking layerss by etching

Country Status (9)

Country Link
JP (1) JPS5514078B1 (enrdf_load_stackoverflow)
AT (1) AT310256B (enrdf_load_stackoverflow)
CA (1) CA949800A (enrdf_load_stackoverflow)
CH (1) CH547867A (enrdf_load_stackoverflow)
DE (1) DE2007693B2 (enrdf_load_stackoverflow)
FR (1) FR2081014B1 (enrdf_load_stackoverflow)
GB (1) GB1310188A (enrdf_load_stackoverflow)
NL (1) NL7102170A (enrdf_load_stackoverflow)
SE (1) SE359232B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0838846A3 (en) * 1996-10-24 1999-04-28 Canon Kabushiki Kaisha Method of forming an electronic device having a silicon nitride film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2454399C2 (de) * 1974-11-16 1981-09-24 Merck Patent Gmbh, 6100 Darmstadt Ablösemittel für Fotolacke

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2149269C3 (de) * 1971-10-02 1981-04-09 Daimler-Benz Ag, 7000 Stuttgart Pneumatisch arbeitende Regelvorrichtung zur selbsttätigen Ausrichtung von Kraftfahrzeugscheinwerfern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0838846A3 (en) * 1996-10-24 1999-04-28 Canon Kabushiki Kaisha Method of forming an electronic device having a silicon nitride film
US6022751A (en) * 1996-10-24 2000-02-08 Canon Kabushiki Kaisha Production of electronic device

Also Published As

Publication number Publication date
DE2007693B2 (de) 1976-12-16
CA949800A (en) 1974-06-25
AT310256B (de) 1973-09-25
NL7102170A (enrdf_load_stackoverflow) 1971-08-23
CH547867A (de) 1974-04-11
FR2081014B1 (enrdf_load_stackoverflow) 1977-06-17
DE2007693A1 (de) 1971-09-02
SE359232B (enrdf_load_stackoverflow) 1973-08-27
JPS5514078B1 (enrdf_load_stackoverflow) 1980-04-14
FR2081014A1 (enrdf_load_stackoverflow) 1971-11-26

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee