GB1269605A - Improvements in or relating to field-effect transistors - Google Patents
Improvements in or relating to field-effect transistorsInfo
- Publication number
- GB1269605A GB1269605A GB08922/70A GB1892270A GB1269605A GB 1269605 A GB1269605 A GB 1269605A GB 08922/70 A GB08922/70 A GB 08922/70A GB 1892270 A GB1892270 A GB 1892270A GB 1269605 A GB1269605 A GB 1269605A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- gate
- source
- april
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005566 electron beam evaporation Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Weting (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691920400 DE1920400A1 (de) | 1969-04-22 | 1969-04-22 | Verfahren zur Herstellung von Feldeffekttransistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1269605A true GB1269605A (en) | 1972-04-06 |
Family
ID=5731935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08922/70A Expired GB1269605A (en) | 1969-04-22 | 1970-04-21 | Improvements in or relating to field-effect transistors |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4826971B1 (enExample) |
| AT (1) | AT305378B (enExample) |
| CH (1) | CH501313A (enExample) |
| DE (1) | DE1920400A1 (enExample) |
| FR (1) | FR2039341B1 (enExample) |
| GB (1) | GB1269605A (enExample) |
| NL (1) | NL7003476A (enExample) |
| SE (1) | SE355897B (enExample) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445924A (en) * | 1965-06-30 | 1969-05-27 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characteristics |
| US3426422A (en) * | 1965-10-23 | 1969-02-11 | Fairchild Camera Instr Co | Method of making stable semiconductor devices |
| US3474310A (en) * | 1967-02-03 | 1969-10-21 | Hitachi Ltd | Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same |
-
1969
- 1969-04-22 DE DE19691920400 patent/DE1920400A1/de active Pending
-
1970
- 1970-03-11 NL NL7003476A patent/NL7003476A/xx unknown
- 1970-04-16 FR FR7013781A patent/FR2039341B1/fr not_active Expired
- 1970-04-17 CH CH571370A patent/CH501313A/de not_active IP Right Cessation
- 1970-04-20 AT AT358170A patent/AT305378B/de active
- 1970-04-21 GB GB08922/70A patent/GB1269605A/en not_active Expired
- 1970-04-21 SE SE05507/70A patent/SE355897B/xx unknown
- 1970-04-22 JP JP45033934A patent/JPS4826971B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1920400A1 (de) | 1970-11-12 |
| AT305378B (de) | 1973-02-26 |
| FR2039341B1 (enExample) | 1975-01-10 |
| FR2039341A1 (enExample) | 1971-01-15 |
| SE355897B (enExample) | 1973-05-07 |
| NL7003476A (enExample) | 1970-10-26 |
| JPS4826971B1 (enExample) | 1973-08-17 |
| CH501313A (de) | 1970-12-31 |
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