CH501313A - Verfahren zur Herstellung von Feldeffekttransistoren - Google Patents
Verfahren zur Herstellung von FeldeffekttransistorenInfo
- Publication number
- CH501313A CH501313A CH571370A CH571370A CH501313A CH 501313 A CH501313 A CH 501313A CH 571370 A CH571370 A CH 571370A CH 571370 A CH571370 A CH 571370A CH 501313 A CH501313 A CH 501313A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- field effect
- effect transistors
- transistors
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691920400 DE1920400A1 (de) | 1969-04-22 | 1969-04-22 | Verfahren zur Herstellung von Feldeffekttransistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH501313A true CH501313A (de) | 1970-12-31 |
Family
ID=5731935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH571370A CH501313A (de) | 1969-04-22 | 1970-04-17 | Verfahren zur Herstellung von Feldeffekttransistoren |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4826971B1 (de) |
| AT (1) | AT305378B (de) |
| CH (1) | CH501313A (de) |
| DE (1) | DE1920400A1 (de) |
| FR (1) | FR2039341B1 (de) |
| GB (1) | GB1269605A (de) |
| NL (1) | NL7003476A (de) |
| SE (1) | SE355897B (de) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445924A (en) * | 1965-06-30 | 1969-05-27 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characteristics |
| US3426422A (en) * | 1965-10-23 | 1969-02-11 | Fairchild Camera Instr Co | Method of making stable semiconductor devices |
| US3474310A (en) * | 1967-02-03 | 1969-10-21 | Hitachi Ltd | Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same |
-
1969
- 1969-04-22 DE DE19691920400 patent/DE1920400A1/de active Pending
-
1970
- 1970-03-11 NL NL7003476A patent/NL7003476A/xx unknown
- 1970-04-16 FR FR7013781A patent/FR2039341B1/fr not_active Expired
- 1970-04-17 CH CH571370A patent/CH501313A/de not_active IP Right Cessation
- 1970-04-20 AT AT358170A patent/AT305378B/de active
- 1970-04-21 GB GB1892270A patent/GB1269605A/en not_active Expired
- 1970-04-21 SE SE550770A patent/SE355897B/xx unknown
- 1970-04-22 JP JP3393470A patent/JPS4826971B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AT305378B (de) | 1973-02-26 |
| FR2039341B1 (de) | 1975-01-10 |
| NL7003476A (de) | 1970-10-26 |
| FR2039341A1 (de) | 1971-01-15 |
| GB1269605A (en) | 1972-04-06 |
| JPS4826971B1 (de) | 1973-08-17 |
| DE1920400A1 (de) | 1970-11-12 |
| SE355897B (de) | 1973-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |