GB1269605A - Improvements in or relating to field-effect transistors - Google Patents

Improvements in or relating to field-effect transistors

Info

Publication number
GB1269605A
GB1269605A GB1892270A GB1892270A GB1269605A GB 1269605 A GB1269605 A GB 1269605A GB 1892270 A GB1892270 A GB 1892270A GB 1892270 A GB1892270 A GB 1892270A GB 1269605 A GB1269605 A GB 1269605A
Authority
GB
United Kingdom
Prior art keywords
aluminium
gate
source
april
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1892270A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1269605A publication Critical patent/GB1269605A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB1892270A 1969-04-22 1970-04-21 Improvements in or relating to field-effect transistors Expired GB1269605A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920400 DE1920400A1 (de) 1969-04-22 1969-04-22 Verfahren zur Herstellung von Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
GB1269605A true GB1269605A (en) 1972-04-06

Family

ID=5731935

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1892270A Expired GB1269605A (en) 1969-04-22 1970-04-21 Improvements in or relating to field-effect transistors

Country Status (8)

Country Link
JP (1) JPS4826971B1 (de)
AT (1) AT305378B (de)
CH (1) CH501313A (de)
DE (1) DE1920400A1 (de)
FR (1) FR2039341B1 (de)
GB (1) GB1269605A (de)
NL (1) NL7003476A (de)
SE (1) SE355897B (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3445924A (en) * 1965-06-30 1969-05-27 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characteristics
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same

Also Published As

Publication number Publication date
AT305378B (de) 1973-02-26
FR2039341B1 (de) 1975-01-10
NL7003476A (de) 1970-10-26
FR2039341A1 (de) 1971-01-15
CH501313A (de) 1970-12-31
JPS4826971B1 (de) 1973-08-17
DE1920400A1 (de) 1970-11-12
SE355897B (de) 1973-05-07

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