AT305417B - Verfahren zur Herstellung von Schaltkreisen - Google Patents

Verfahren zur Herstellung von Schaltkreisen

Info

Publication number
AT305417B
AT305417B AT748970A AT748970A AT305417B AT 305417 B AT305417 B AT 305417B AT 748970 A AT748970 A AT 748970A AT 748970 A AT748970 A AT 748970A AT 305417 B AT305417 B AT 305417B
Authority
AT
Austria
Prior art keywords
circuits
production
Prior art date
Application number
AT748970A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691942455 external-priority patent/DE1942455C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT305417B publication Critical patent/AT305417B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
AT748970A 1969-08-20 1970-08-18 Verfahren zur Herstellung von Schaltkreisen AT305417B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691942455 DE1942455C3 (de) 1969-08-20 Verfahren zum Herstellen mehrschichtiger Leiterbahnen

Publications (1)

Publication Number Publication Date
AT305417B true AT305417B (de) 1973-02-26

Family

ID=5743336

Family Applications (1)

Application Number Title Priority Date Filing Date
AT748970A AT305417B (de) 1969-08-20 1970-08-18 Verfahren zur Herstellung von Schaltkreisen

Country Status (8)

Country Link
US (1) US3642548A (de)
JP (1) JPS4910191B1 (de)
AT (1) AT305417B (de)
CH (1) CH508281A (de)
FR (1) FR2060107B1 (de)
GB (1) GB1257408A (de)
NL (1) NL7011089A (de)
SE (1) SE351321B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839108A (en) * 1970-07-22 1974-10-01 Us Navy Method of forming a precision pattern of apertures in a plate
US3740523A (en) * 1971-12-30 1973-06-19 Bell Telephone Labor Inc Encoding of read only memory by laser vaporization
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
US4057831A (en) * 1972-09-05 1977-11-08 U.S. Philips Corporation Video record disc manufactured by a process involving chemical or sputter etching
JPS5061124A (de) * 1973-09-28 1975-05-26
US4035208A (en) * 1974-09-03 1977-07-12 Texas Instruments Incorporated Method of patterning Cr-Pt-Au metallization for silicon devices
FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
US4135998A (en) * 1978-04-26 1979-01-23 International Business Machines Corp. Method for forming pt-si schottky barrier contact
US4226932A (en) * 1979-07-05 1980-10-07 Gte Automatic Electric Laboratories Incorporated Titanium nitride as one layer of a multi-layered coating intended to be etched
US4248688A (en) * 1979-09-04 1981-02-03 International Business Machines Corporation Ion milling of thin metal films
CH648692A5 (en) * 1979-09-05 1985-03-29 Bbc Brown Boveri & Cie Contact arrangement on a semiconductor component
US6025205A (en) * 1997-01-07 2000-02-15 Tong Yang Cement Corporation Apparatus and methods of forming preferred orientation-controlled platinum films using nitrogen
JP4605554B2 (ja) * 2000-07-25 2011-01-05 独立行政法人物質・材料研究機構 ドライエッチング用マスク材
JP2005025910A (ja) * 2003-06-13 2005-01-27 Nec Corp 光学的情報記録媒体及びその製造方法
ES2685343B1 (es) 2017-03-31 2019-10-11 Dominguez Francisco Picon Dispositivo y método para el control y gestión de recursos laborales

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271286A (en) * 1964-02-25 1966-09-06 Bell Telephone Labor Inc Selective removal of material using cathodic sputtering
GB1023532A (de) * 1964-01-07
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching
US3546010A (en) * 1968-03-06 1970-12-08 Bosch Gmbh Robert Method of producing multilayer bodies of predetermined electric conductivity

Also Published As

Publication number Publication date
FR2060107A1 (de) 1971-06-11
GB1257408A (de) 1971-12-15
JPS4910191B1 (de) 1974-03-08
DE1942455A1 (de) 1971-02-25
SE351321B (de) 1972-11-20
FR2060107B1 (de) 1974-10-31
CH508281A (de) 1971-05-31
US3642548A (en) 1972-02-15
NL7011089A (de) 1971-02-23
DE1942455B2 (de) 1977-05-26

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Legal Events

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ELJ Ceased due to non-payment of the annual fee