JPS4826971B1 - - Google Patents

Info

Publication number
JPS4826971B1
JPS4826971B1 JP45033934A JP3393470A JPS4826971B1 JP S4826971 B1 JPS4826971 B1 JP S4826971B1 JP 45033934 A JP45033934 A JP 45033934A JP 3393470 A JP3393470 A JP 3393470A JP S4826971 B1 JPS4826971 B1 JP S4826971B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45033934A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4826971B1 publication Critical patent/JPS4826971B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10P95/00
JP45033934A 1969-04-22 1970-04-22 Pending JPS4826971B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920400 DE1920400A1 (de) 1969-04-22 1969-04-22 Verfahren zur Herstellung von Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
JPS4826971B1 true JPS4826971B1 (enExample) 1973-08-17

Family

ID=5731935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45033934A Pending JPS4826971B1 (enExample) 1969-04-22 1970-04-22

Country Status (8)

Country Link
JP (1) JPS4826971B1 (enExample)
AT (1) AT305378B (enExample)
CH (1) CH501313A (enExample)
DE (1) DE1920400A1 (enExample)
FR (1) FR2039341B1 (enExample)
GB (1) GB1269605A (enExample)
NL (1) NL7003476A (enExample)
SE (1) SE355897B (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3445924A (en) * 1965-06-30 1969-05-27 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characteristics
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same

Also Published As

Publication number Publication date
CH501313A (de) 1970-12-31
FR2039341B1 (enExample) 1975-01-10
NL7003476A (enExample) 1970-10-26
AT305378B (de) 1973-02-26
FR2039341A1 (enExample) 1971-01-15
GB1269605A (en) 1972-04-06
DE1920400A1 (de) 1970-11-12
SE355897B (enExample) 1973-05-07

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