FR2039341A1 - - Google Patents

Info

Publication number
FR2039341A1
FR2039341A1 FR7013781A FR7013781A FR2039341A1 FR 2039341 A1 FR2039341 A1 FR 2039341A1 FR 7013781 A FR7013781 A FR 7013781A FR 7013781 A FR7013781 A FR 7013781A FR 2039341 A1 FR2039341 A1 FR 2039341A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7013781A
Other languages
French (fr)
Other versions
FR2039341B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2039341A1 publication Critical patent/FR2039341A1/fr
Application granted granted Critical
Publication of FR2039341B1 publication Critical patent/FR2039341B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7013781A 1969-04-22 1970-04-16 Expired FR2039341B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920400 DE1920400A1 (de) 1969-04-22 1969-04-22 Verfahren zur Herstellung von Feldeffekttransistoren

Publications (2)

Publication Number Publication Date
FR2039341A1 true FR2039341A1 (enExample) 1971-01-15
FR2039341B1 FR2039341B1 (enExample) 1975-01-10

Family

ID=5731935

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7013781A Expired FR2039341B1 (enExample) 1969-04-22 1970-04-16

Country Status (8)

Country Link
JP (1) JPS4826971B1 (enExample)
AT (1) AT305378B (enExample)
CH (1) CH501313A (enExample)
DE (1) DE1920400A1 (enExample)
FR (1) FR2039341B1 (enExample)
GB (1) GB1269605A (enExample)
NL (1) NL7003476A (enExample)
SE (1) SE355897B (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1485073A (fr) * 1965-06-30 1967-06-16 Ibm Procédé de fabrication de transistor à effet de champ et à porte isolée ayant des caractéristiques de fonctionnement commandées
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1485073A (fr) * 1965-06-30 1967-06-16 Ibm Procédé de fabrication de transistor à effet de champ et à porte isolée ayant des caractéristiques de fonctionnement commandées
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same

Also Published As

Publication number Publication date
SE355897B (enExample) 1973-05-07
GB1269605A (en) 1972-04-06
DE1920400A1 (de) 1970-11-12
JPS4826971B1 (enExample) 1973-08-17
CH501313A (de) 1970-12-31
NL7003476A (enExample) 1970-10-26
FR2039341B1 (enExample) 1975-01-10
AT305378B (de) 1973-02-26

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Legal Events

Date Code Title Description
ST Notification of lapse