SE355897B - - Google Patents

Info

Publication number
SE355897B
SE355897B SE05507/70A SE550770A SE355897B SE 355897 B SE355897 B SE 355897B SE 05507/70 A SE05507/70 A SE 05507/70A SE 550770 A SE550770 A SE 550770A SE 355897 B SE355897 B SE 355897B
Authority
SE
Sweden
Application number
SE05507/70A
Inventor
H Schulte
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE355897B publication Critical patent/SE355897B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
SE05507/70A 1969-04-22 1970-04-21 SE355897B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920400 DE1920400A1 (de) 1969-04-22 1969-04-22 Verfahren zur Herstellung von Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
SE355897B true SE355897B (enExample) 1973-05-07

Family

ID=5731935

Family Applications (1)

Application Number Title Priority Date Filing Date
SE05507/70A SE355897B (enExample) 1969-04-22 1970-04-21

Country Status (8)

Country Link
JP (1) JPS4826971B1 (enExample)
AT (1) AT305378B (enExample)
CH (1) CH501313A (enExample)
DE (1) DE1920400A1 (enExample)
FR (1) FR2039341B1 (enExample)
GB (1) GB1269605A (enExample)
NL (1) NL7003476A (enExample)
SE (1) SE355897B (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3445924A (en) * 1965-06-30 1969-05-27 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characteristics
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same

Also Published As

Publication number Publication date
FR2039341A1 (enExample) 1971-01-15
GB1269605A (en) 1972-04-06
DE1920400A1 (de) 1970-11-12
JPS4826971B1 (enExample) 1973-08-17
CH501313A (de) 1970-12-31
NL7003476A (enExample) 1970-10-26
FR2039341B1 (enExample) 1975-01-10
AT305378B (de) 1973-02-26

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