GB1211499A - A method of manufacturing semiconductor devices - Google Patents
A method of manufacturing semiconductor devicesInfo
- Publication number
- GB1211499A GB1211499A GB1222669A GB1222669A GB1211499A GB 1211499 A GB1211499 A GB 1211499A GB 1222669 A GB1222669 A GB 1222669A GB 1222669 A GB1222669 A GB 1222669A GB 1211499 A GB1211499 A GB 1211499A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diamine
- semiconductor devices
- manufacturing semiconductor
- junction
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 abstract 2
- 150000004985 diamines Chemical class 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 abstract 1
- -1 ethylene diamine Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 abstract 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2239/00—Miscellaneous
- H01H2239/052—Strain gauge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Pressure Sensors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1222669A GB1211499A (en) | 1969-03-07 | 1969-03-07 | A method of manufacturing semiconductor devices |
DE19702010448 DE2010448A1 (de) | 1969-03-07 | 1970-03-05 | |
JP1924670A JPS4834454B1 (de) | 1969-03-07 | 1970-03-06 | |
FR7008093A FR2034731B1 (de) | 1969-03-07 | 1970-03-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1222669A GB1211499A (en) | 1969-03-07 | 1969-03-07 | A method of manufacturing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1211499A true GB1211499A (en) | 1970-11-04 |
Family
ID=10000667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1222669A Expired GB1211499A (en) | 1969-03-07 | 1969-03-07 | A method of manufacturing semiconductor devices |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4834454B1 (de) |
DE (1) | DE2010448A1 (de) |
FR (1) | FR2034731B1 (de) |
GB (1) | GB1211499A (de) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4203128A (en) | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
FR2449971A1 (fr) * | 1979-02-22 | 1980-09-19 | Rca Corp | Procede d'attaque en une fois pour former une structure mesa ayant une paroi a plusieurs etages |
US4234361A (en) | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
GB2128404A (en) * | 1982-10-04 | 1984-04-26 | Becton Dickinson Co | Piezoresistive transducer |
GB2136204A (en) * | 1983-01-26 | 1984-09-12 | Hitachi Ltd | A method of fabricating especially etching a diaphragm in a semiconductor device |
GB2146697A (en) * | 1983-09-17 | 1985-04-24 | Stc Plc | Flexible hinge device |
GB2152690A (en) * | 1983-08-12 | 1985-08-07 | Standard Telephones Cables Ltd | Improvements in infra-red sensor arrays |
US4605919A (en) * | 1982-10-04 | 1986-08-12 | Becton, Dickinson And Company | Piezoresistive transducer |
GB2209245A (en) * | 1987-08-28 | 1989-05-04 | Gen Electric Co Plc | Method of producing a three-dimensional structure |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4238275A (en) * | 1978-12-29 | 1980-12-09 | International Business Machines Corporation | Pyrocatechol-amine-water solution for the determination of defects |
JPH04342129A (ja) * | 1991-05-17 | 1992-11-27 | Sony Corp | 層間絶縁膜の平坦化方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
NL256986A (de) * | 1960-01-04 | |||
FR1472688A (fr) * | 1965-03-31 | 1967-03-10 | Westinghouse Electric Corp | Circuits intégrés à semi-conducteurs et procédé de fabrication correspondant |
FR1483890A (fr) * | 1965-04-26 | 1967-06-09 | Siemens Ag | Procédé de fabrication de circuits à semi-conducteurs |
-
1969
- 1969-03-07 GB GB1222669A patent/GB1211499A/en not_active Expired
-
1970
- 1970-03-05 DE DE19702010448 patent/DE2010448A1/de active Pending
- 1970-03-06 JP JP1924670A patent/JPS4834454B1/ja active Pending
- 1970-03-06 FR FR7008093A patent/FR2034731B1/fr not_active Expired
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4203128A (en) | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
FR2449971A1 (fr) * | 1979-02-22 | 1980-09-19 | Rca Corp | Procede d'attaque en une fois pour former une structure mesa ayant une paroi a plusieurs etages |
US4234361A (en) | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
GB2128404A (en) * | 1982-10-04 | 1984-04-26 | Becton Dickinson Co | Piezoresistive transducer |
US4605919A (en) * | 1982-10-04 | 1986-08-12 | Becton, Dickinson And Company | Piezoresistive transducer |
GB2136204A (en) * | 1983-01-26 | 1984-09-12 | Hitachi Ltd | A method of fabricating especially etching a diaphragm in a semiconductor device |
US4588472A (en) * | 1983-01-26 | 1986-05-13 | Hitachi, Ltd. | Method of fabricating a semiconductor device |
GB2152690A (en) * | 1983-08-12 | 1985-08-07 | Standard Telephones Cables Ltd | Improvements in infra-red sensor arrays |
GB2146697A (en) * | 1983-09-17 | 1985-04-24 | Stc Plc | Flexible hinge device |
GB2209245A (en) * | 1987-08-28 | 1989-05-04 | Gen Electric Co Plc | Method of producing a three-dimensional structure |
Also Published As
Publication number | Publication date |
---|---|
JPS4834454B1 (de) | 1973-10-22 |
FR2034731A1 (de) | 1970-12-11 |
FR2034731B1 (de) | 1975-09-26 |
DE2010448A1 (de) | 1970-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
PLNP | Patent lapsed through nonpayment of renewal fees |