GB2209245A - Method of producing a three-dimensional structure - Google Patents
Method of producing a three-dimensional structure Download PDFInfo
- Publication number
- GB2209245A GB2209245A GB8720340A GB8720340A GB2209245A GB 2209245 A GB2209245 A GB 2209245A GB 8720340 A GB8720340 A GB 8720340A GB 8720340 A GB8720340 A GB 8720340A GB 2209245 A GB2209245 A GB 2209245A
- Authority
- GB
- United Kingdom
- Prior art keywords
- dimensional structure
- substrate
- doped layer
- producing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 239000002019 doping agent Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000009987 spinning Methods 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Pressure Sensors (AREA)
Abstract
In a method of producing a non-planar three-dimensional structure in silicon, for example, a doped layer is applied to a substrate by spinning on a dopant diffusion source and etching with a doping slective etchant to produce the three- dimensional structure. <IMAGE>
Description
METHOD OF PRODUCING A THREE-DIMENSIONAL STRUCTURE
This invention relates to a method for producing a three-dimensional structure.
Three-dimensional silicon structures are of particular interest in the field of sensors, such as accelerometers and pressure sensors, because of their low cost, ruggedness and potential for miniaturisation.
Single crystal silicon also has good mechanical properties and, by combining the electrical and mechanical properties of silicon in a single chip, smart sensors with integrated processing electronics are possible.
Known techniques for producing three-dimensional structures tend to be complicated and expensive, requiring for example, equipment such as high energy ion implantation apparatus.
The present invention seeks to provide an improved method for producing a three-dimensional structure.
According to the invention, there is provided a method of producing a three-dimensional structure which comprises the steps of: applying a doped layer to a substrate by diffusion from a spun-on source; and etching the doped layer to produce the three-dimensional structure. This method is relatively easy to implement and does not require the use of expensive equipment or a large number of complicated manufacturing steps. Although the method was developed for use with silicon three dimensional structures, other materials may also be used.
Advantageously, the doped layer is highly doped with boron to a carrier concentration greater than about 7 x 1019cms3. This is a sufficiently high concentration to inhibit etching which may be, for example, etching with potassium hydroxide solution (KOH).
One way in which the invention may be performed is now described by way of example with reference to the accompanying drawings, in which Figures 1 to 4 schematically illustrate steps in a method in accordance with the invention.
With reference to Figures 1 to 4, a method for fabricating a boron doped bridge in a silicon single crystal wafer, involves firstly mounting a silicon substrate 1 onto a spinner chuck. Doping solution 2 is applied to a surface of the pre-cleaned substrate 1 using a syringe. In this method, the doping solution used is
Emulsitone Borosilicafilm 5257. The silicon wafer is then spun at a speed of about 2000 to 3000 rpm for about 30 seconds. This causes the doping solution to be spread uniformly over the silicon surface. The coated silicon substrate 1 is then baked at a temperature of 150 0c for about one hour to drive off solvents from the doping solution. Then the substrate is placed in a furnace and heated to about 1050 0C in a nitrogen atmosphere to obtain diffusion of boron from the dopant into the silicon substrate. This results in an etch resistant boron doped layer having a carrier concentration of greater than about 7 x 10 cm3. The spun-on film is then removed by etching in hydrofluoric acid to leave a silicon substrate 1 having a boron doped layer 3 as shown in Figure 2.
Photolithographic techniques are then used to define a "bridge" pattern 4 in the boron doped layer 3 by wet chemical etching to give the structure illustrated in
Figure 3. Then silicon is etched from beneath the bridge pattern 4 using an anisotropic and dopant selective etch such as a solution of KOH, isopropyl alcohol, and water to give the final three-dimensional structure as shown in
Figure 4.
Claims (5)
1. A method of producing a three-dimensional structure comprising the steps of: applying a doped layer to a substrate by diffusion from a spun-on source; and etching the doped layer to produce the three-dimensional structure.
2. A method as claimed in claim 1 wherein the doped layer is a boron doped layer having a carrier concentration of greater than about 7 x 1019cm3.
3. A method as claimed in any preceding claim and wherein a doping solution is applied to the substrate surface using spin-on techniques and the substrate is then baked to drive off solvents and diffusion from the dopant into the substrate carried out by heating the substrate at a high temperature.
4. A three-dimensional silicon structure produced using a method as claimed in any preceding claim.
5. A method of producing a three-dimensional structure substantially as illustrated in and described with reference to the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8720340A GB2209245A (en) | 1987-08-28 | 1987-08-28 | Method of producing a three-dimensional structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8720340A GB2209245A (en) | 1987-08-28 | 1987-08-28 | Method of producing a three-dimensional structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8720340D0 GB8720340D0 (en) | 1987-10-07 |
| GB2209245A true GB2209245A (en) | 1989-05-04 |
Family
ID=10622969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8720340A Withdrawn GB2209245A (en) | 1987-08-28 | 1987-08-28 | Method of producing a three-dimensional structure |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2209245A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012028723A2 (en) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Method for the wet-chemical etching of a highly doped semiconductor layer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106323524B (en) * | 2016-08-19 | 2021-10-26 | 国网河南省电力公司电力科学研究院 | System and method for measuring static tension of straight-line-shaped hardware fitting at end part of high-voltage sleeve of transformer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1211499A (en) * | 1969-03-07 | 1970-11-04 | Standard Telephones Cables Ltd | A method of manufacturing semiconductor devices |
| GB1331820A (en) * | 1970-02-19 | 1973-09-26 | Ibm | Impurity doping of semi-conductor substrate |
| GB1389325A (en) * | 1971-04-08 | 1975-04-03 | Semikron Gleichrichterbau | Doping of semi-conductor bodies with boron |
| GB1485484A (en) * | 1973-09-19 | 1977-09-14 | Texas Instruments Inc | Compositions for use in forming a doped oxide film |
| EP0130311A2 (en) * | 1983-06-08 | 1985-01-09 | AlliedSignal Inc. | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| GB2180691A (en) * | 1985-09-06 | 1987-04-01 | Yokogawa Hokushin Electric | Vibratory transducer and method of making the same |
-
1987
- 1987-08-28 GB GB8720340A patent/GB2209245A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1211499A (en) * | 1969-03-07 | 1970-11-04 | Standard Telephones Cables Ltd | A method of manufacturing semiconductor devices |
| GB1331820A (en) * | 1970-02-19 | 1973-09-26 | Ibm | Impurity doping of semi-conductor substrate |
| GB1389325A (en) * | 1971-04-08 | 1975-04-03 | Semikron Gleichrichterbau | Doping of semi-conductor bodies with boron |
| GB1485484A (en) * | 1973-09-19 | 1977-09-14 | Texas Instruments Inc | Compositions for use in forming a doped oxide film |
| EP0130311A2 (en) * | 1983-06-08 | 1985-01-09 | AlliedSignal Inc. | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| GB2180691A (en) * | 1985-09-06 | 1987-04-01 | Yokogawa Hokushin Electric | Vibratory transducer and method of making the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012028723A2 (en) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Method for the wet-chemical etching of a highly doped semiconductor layer |
| DE102011050903A1 (en) * | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Process for the wet-chemical etching of a highly doped semiconductor layer |
| DE102011050903A8 (en) * | 2010-09-03 | 2012-05-16 | Schott Solar Ag | Process for wet-chemical etching of a highly doped semiconductor layer |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8720340D0 (en) | 1987-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |