GB1485484A - Compositions for use in forming a doped oxide film - Google Patents

Compositions for use in forming a doped oxide film

Info

Publication number
GB1485484A
GB1485484A GB40047/74A GB4004774A GB1485484A GB 1485484 A GB1485484 A GB 1485484A GB 40047/74 A GB40047/74 A GB 40047/74A GB 4004774 A GB4004774 A GB 4004774A GB 1485484 A GB1485484 A GB 1485484A
Authority
GB
United Kingdom
Prior art keywords
composition
dopant
wafer
acid
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40047/74A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1485484A publication Critical patent/GB1485484A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1485484 Semi-conductor devices TEXAS INSTRUMENTS Inc 13 Sept 1974 [19 Sept 1973] 40047/74 Heading H1K A conductivity type determining dopant is diffused into a semi-conductive wafer by applying to a surface of the wafer a composition comprising tetraethyl orthosilicate, acetic acid or acetic anhydride, and the dopant in a solvent, which composition has been refluxed to reach equilibrium, and heating the coated substrate to a temperature at which a silicon oxide layer containing the dopant is formed, and then heating to a diffusion temperature. The equilibrium mixture is stated to include ethyl acetate, diethoxysilicondiacetate and triethoxysilicon acetate. The solvent is preferably ethylalcohol. The composition may be applied by spinning, spraying or dipping. For a silicon wafer the dopant may be B, P, As or Au, the latter for lifetime control, included in the composition as boron oxide, orthophosphorio acid or P 2 O 5 , orthoarsenic acid or gold chloride respectively. For a gallium arsenide wafer, zinc may be included as zinc chloride.
GB40047/74A 1973-09-19 1974-09-13 Compositions for use in forming a doped oxide film Expired GB1485484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39890773A 1973-09-19 1973-09-19

Publications (1)

Publication Number Publication Date
GB1485484A true GB1485484A (en) 1977-09-14

Family

ID=23577297

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40047/74A Expired GB1485484A (en) 1973-09-19 1974-09-13 Compositions for use in forming a doped oxide film

Country Status (4)

Country Link
JP (1) JPS5058982A (en)
DE (1) DE2440148A1 (en)
FR (1) FR2245407B3 (en)
GB (1) GB1485484A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104412A1 (en) * 1982-09-23 1984-04-04 Allied Corporation Polymeric boron-nitrogen dopant
US4578283A (en) * 1982-09-23 1986-03-25 Allied Corporation Polymeric boron nitrogen dopant
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure
EP0834489A1 (en) * 1996-10-04 1998-04-08 Dow Corning Corporation Thick opaque ceramic coatings
US10134942B2 (en) 2012-12-28 2018-11-20 Merck Patent Gmbh Doping media for the local doping of silicon wafers

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101836833B (en) * 2010-04-09 2011-12-21 扬州维邦园林机械有限公司 Automatic back scrubbing machine
EP2938760A1 (en) * 2012-12-28 2015-11-04 Merck Patent GmbH Liquid doping media for the local doping of silicon wafers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104412A1 (en) * 1982-09-23 1984-04-04 Allied Corporation Polymeric boron-nitrogen dopant
US4578283A (en) * 1982-09-23 1986-03-25 Allied Corporation Polymeric boron nitrogen dopant
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure
EP0834489A1 (en) * 1996-10-04 1998-04-08 Dow Corning Corporation Thick opaque ceramic coatings
US10134942B2 (en) 2012-12-28 2018-11-20 Merck Patent Gmbh Doping media for the local doping of silicon wafers

Also Published As

Publication number Publication date
FR2245407A1 (en) 1975-04-25
FR2245407B3 (en) 1977-04-08
JPS5058982A (en) 1975-05-22
DE2440148A1 (en) 1975-03-20

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Legal Events

Date Code Title Description
49R Reference inserted (sect. 9/1949)
PS Patent sealed [section 19, patents act 1949]
SP Amendment (slips) printed
PE20 Patent expired after termination of 20 years

Effective date: 19940912