JPS5490969A - Glass attaching method to semiconductor groove - Google Patents

Glass attaching method to semiconductor groove

Info

Publication number
JPS5490969A
JPS5490969A JP15749077A JP15749077A JPS5490969A JP S5490969 A JPS5490969 A JP S5490969A JP 15749077 A JP15749077 A JP 15749077A JP 15749077 A JP15749077 A JP 15749077A JP S5490969 A JPS5490969 A JP S5490969A
Authority
JP
Japan
Prior art keywords
glass
groove
moisture
ammonia concentration
electrophoresis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15749077A
Other languages
Japanese (ja)
Other versions
JPS5733850B2 (en
Inventor
Yutaka Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15749077A priority Critical patent/JPS5490969A/en
Publication of JPS5490969A publication Critical patent/JPS5490969A/en
Publication of JPS5733850B2 publication Critical patent/JPS5733850B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase the yield rate of element, by making good for the glass coating condition, through specifying the ammonia concentration and the solubility of moisture of the glass dispersion liquid used, in coating the glass powder selectively in the grooves on the semiconductor substrate with electrophoresis.
CONSTITUTION: The N type layer 1 is grown on the N+ type Si substrate, the P type layer 5 is formed by diffusion, and the groove 3 reaching the layer 1 is made on the specified region with the SiO2 film 2 covered. Next, to protect the end of the PN junction for insulation, consisting of the layers 1 and 5 exposed in the groove 3, the end is burried with the glass powder 4. In this case, the composition of glass dispersion liquid used for electrophoresis is determined as follows: Ammonia concentration is more than 1.7 × 10-2 mol/1 and moisture is less than 2 volume %, favorably, ammonia concentration 1.7 × 10-2 to 1.1 × 10-1 mol/1 and moisture of 0 to 1 volume %. Thus, the swell of glass of the shoulder of the groove 3 and the air void in the groove 3 are not caused and the glass 4 can be coated with good shape.
COPYRIGHT: (C)1979,JPO&Japio
JP15749077A 1977-12-28 1977-12-28 Glass attaching method to semiconductor groove Granted JPS5490969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15749077A JPS5490969A (en) 1977-12-28 1977-12-28 Glass attaching method to semiconductor groove

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15749077A JPS5490969A (en) 1977-12-28 1977-12-28 Glass attaching method to semiconductor groove

Publications (2)

Publication Number Publication Date
JPS5490969A true JPS5490969A (en) 1979-07-19
JPS5733850B2 JPS5733850B2 (en) 1982-07-20

Family

ID=15650816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15749077A Granted JPS5490969A (en) 1977-12-28 1977-12-28 Glass attaching method to semiconductor groove

Country Status (1)

Country Link
JP (1) JPS5490969A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223272A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Method of manufacturing glass passivation semiconductor device
JPS5227362A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Formation method of passivation film
JPS5227363A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Formation method of glass film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223272A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Method of manufacturing glass passivation semiconductor device
JPS5227362A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Formation method of passivation film
JPS5227363A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Formation method of glass film

Also Published As

Publication number Publication date
JPS5733850B2 (en) 1982-07-20

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