FR2791776B1 - Procede et appareil a contraste de tension pour inspecter des semi-conducteurs en utilisant un faisceau de particules a basse tension - Google Patents

Procede et appareil a contraste de tension pour inspecter des semi-conducteurs en utilisant un faisceau de particules a basse tension

Info

Publication number
FR2791776B1
FR2791776B1 FR0000174A FR0000174A FR2791776B1 FR 2791776 B1 FR2791776 B1 FR 2791776B1 FR 0000174 A FR0000174 A FR 0000174A FR 0000174 A FR0000174 A FR 0000174A FR 2791776 B1 FR2791776 B1 FR 2791776B1
Authority
FR
France
Prior art keywords
particle beam
voltage
contrast method
low voltage
inspecting semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0000174A
Other languages
English (en)
Other versions
FR2791776A1 (fr
Inventor
Chiwoei Wayne Lo
Kenichi Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger Technologies Inc
Original Assignee
Schlumberger Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technologies Inc filed Critical Schlumberger Technologies Inc
Publication of FR2791776A1 publication Critical patent/FR2791776A1/fr
Application granted granted Critical
Publication of FR2791776B1 publication Critical patent/FR2791776B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2594—Measuring electric fields or potentials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
FR0000174A 1999-01-08 2000-01-07 Procede et appareil a contraste de tension pour inspecter des semi-conducteurs en utilisant un faisceau de particules a basse tension Expired - Fee Related FR2791776B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/227,395 US6344750B1 (en) 1999-01-08 1999-01-08 Voltage contrast method for semiconductor inspection using low voltage particle beam

Publications (2)

Publication Number Publication Date
FR2791776A1 FR2791776A1 (fr) 2000-10-06
FR2791776B1 true FR2791776B1 (fr) 2003-03-14

Family

ID=22852939

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0000174A Expired - Fee Related FR2791776B1 (fr) 1999-01-08 2000-01-07 Procede et appareil a contraste de tension pour inspecter des semi-conducteurs en utilisant un faisceau de particules a basse tension

Country Status (6)

Country Link
US (2) US6344750B1 (fr)
JP (2) JP2000208085A (fr)
KR (1) KR100653499B1 (fr)
DE (1) DE10000365B4 (fr)
FR (1) FR2791776B1 (fr)
TW (1) TW461964B (fr)

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3189801B2 (ja) * 1998-08-28 2001-07-16 日本電気株式会社 半導体評価装置，これに用いる磁界検出器及びこの製造方法並びに半導体評価用プログラムを記憶した記憶媒体
US6897440B1 (en) 1998-11-30 2005-05-24 Fab Solutions, Inc. Contact hole standard test device
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
JP4066078B2 (ja) * 1999-05-27 2008-03-26 株式会社ニコン 写像型電子顕微鏡
US6545491B2 (en) * 1999-08-27 2003-04-08 Samsung Electronics Co., Ltd. Apparatus for detecting defects in semiconductor devices and methods of using the same
US6586736B1 (en) 1999-09-10 2003-07-01 Kla-Tencor, Corporation Scanning electron beam microscope having an electrode for controlling charge build up during scanning of a sample
JP3737656B2 (ja) * 1999-09-27 2006-01-18 株式会社東芝 荷電ビーム露光方法
JP2001156136A (ja) * 1999-11-30 2001-06-08 Jeol Ltd 荷電粒子ビームを用いたホールの検査方法
US6633174B1 (en) 1999-12-14 2003-10-14 Kla-Tencor Stepper type test structures and methods for inspection of semiconductor integrated circuits
US6636064B1 (en) 1999-12-14 2003-10-21 Kla-Tencor Dual probe test structures for semiconductor integrated circuits
US6445199B1 (en) 1999-12-14 2002-09-03 Kla-Tencor Corporation Methods and apparatus for generating spatially resolved voltage contrast maps of semiconductor test structures
US6528818B1 (en) 1999-12-14 2003-03-04 Kla-Tencor Test structures and methods for inspection of semiconductor integrated circuits
US6524873B1 (en) 1999-12-14 2003-02-25 Kla-Tencor Continuous movement scans of test structures on semiconductor integrated circuits
US6566885B1 (en) * 1999-12-14 2003-05-20 Kla-Tencor Multiple directional scans of test structures on semiconductor integrated circuits
US7179661B1 (en) 1999-12-14 2007-02-20 Kla-Tencor Chemical mechanical polishing test structures and methods for inspecting the same
JP2001189263A (ja) * 1999-12-28 2001-07-10 Toshiba Corp 合わせずれ検査方法及び荷電ビーム露光方法
US6664546B1 (en) 2000-02-10 2003-12-16 Kla-Tencor In-situ probe for optimizing electron beam inspection and metrology based on surface potential
US7655482B2 (en) * 2000-04-18 2010-02-02 Kla-Tencor Chemical mechanical polishing test structures and methods for inspecting the same
US7235800B1 (en) * 2000-05-31 2007-06-26 Advanced Micro Devices, Inc. Electrical probing of SOI circuits
JP4034500B2 (ja) * 2000-06-19 2008-01-16 株式会社日立製作所 半導体装置の検査方法及び検査装置、及びそれを用いた半導体装置の製造方法
EP2365512A3 (fr) * 2000-06-27 2012-01-04 Ebara Corporation Appareil d'inspection par faisceau de particules chargées
US7135676B2 (en) * 2000-06-27 2006-11-14 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
EP1304717A4 (fr) * 2000-07-27 2009-12-09 Ebara Corp Appareil d'analyse a faisceau plan
US6995393B2 (en) * 2000-08-25 2006-02-07 Kla-Tencor Technologies Corporation Apparatus and methods for semiconductor IC failure detection
US7067335B2 (en) * 2000-08-25 2006-06-27 Kla-Tencor Technologies Corporation Apparatus and methods for semiconductor IC failure detection
DE10052198A1 (de) * 2000-10-20 2002-05-02 Akt Electron Beam Technology G Verfahren und Vorrichtung zum Testen von mikroelektronischen Komponenten
WO2002037526A1 (fr) * 2000-11-02 2002-05-10 Ebara Corporation Appareil a faisceau electronique et procede de fabrication d'un dispositif a semi-conducteur comprenant ledit appareil
JP3732738B2 (ja) * 2000-12-08 2006-01-11 ファブソリューション株式会社 半導体デバイス検査装置
US20020085761A1 (en) * 2000-12-30 2002-07-04 Gary Cao Enhanced uniqueness for pattern recognition
DE10103061B4 (de) * 2001-01-24 2010-04-08 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Inspektion der Tiefe einer Öffnung in einer dielektrischen Materialschicht
US6589860B1 (en) * 2001-03-16 2003-07-08 Advanced Micro Devices, Inc. System and method for calibrating electron beam defect inspection tool
US6627884B2 (en) * 2001-03-19 2003-09-30 Kla-Tencor Technologies Corporation Simultaneous flooding and inspection for charge control in an electron beam inspection machine
JP3698075B2 (ja) 2001-06-20 2005-09-21 株式会社日立製作所 半導体基板の検査方法およびその装置
US6642726B2 (en) * 2001-06-29 2003-11-04 Kla-Tencor Corporation Apparatus and methods for reliable and efficient detection of voltage contrast defects
US6855568B2 (en) 2001-06-29 2005-02-15 Kla-Tencor Corporation Apparatus and methods for monitoring self-aligned contact arrays using voltage contrast inspection
US6784425B1 (en) * 2001-06-29 2004-08-31 Kla-Tencor Technologies Corporation Energy filter multiplexing
US6732002B1 (en) 2001-08-23 2004-05-04 Kla-Tencor Corporation Apparatus and methods for predicting multiple product chip yields through critical area matching
US6861666B1 (en) 2001-10-17 2005-03-01 Kla-Tencor Technologies Corporation Apparatus and methods for determining and localization of failures in test structures using voltage contrast
JP3859480B2 (ja) * 2001-10-17 2006-12-20 株式会社ルネサステクノロジ 検査方法
US7280945B1 (en) 2001-10-17 2007-10-09 Kla-Tencor Technologies Corporation Apparatus and methods for detection of systematic defects
US6918101B1 (en) 2001-10-25 2005-07-12 Kla -Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
US6948141B1 (en) 2001-10-25 2005-09-20 Kla-Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
KR100435833B1 (ko) * 2001-11-29 2004-06-10 (주)가이아진 바이오칩 이미지 분석 시스템 및 그 방법
US6573736B1 (en) * 2002-01-09 2003-06-03 Taiwan Semiconductor Manufacturing Company Primary ion or electron current adjustment to enhance voltage contrast effect
JP3913555B2 (ja) * 2002-01-17 2007-05-09 ファブソリューション株式会社 膜厚測定方法および膜厚測定装置
JP2003332396A (ja) * 2002-05-13 2003-11-21 Mitsubishi Electric Corp 半導体装置の検査方法
US6774648B1 (en) 2002-05-23 2004-08-10 Kla-Tencor Technologies Corporation Apparatus and methods for optically detecting defects in voltage contrast test structures
US7129694B2 (en) 2002-05-23 2006-10-31 Applied Materials, Inc. Large substrate test system
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
US7038441B2 (en) * 2002-10-02 2006-05-02 Suss Microtec Testsystems Gmbh Test apparatus with loading device
US6903338B2 (en) * 2003-01-30 2005-06-07 Kla-Tencor Technologies Corporation Method and apparatus for reducing substrate edge effects in electron lenses
US7469057B2 (en) * 2003-02-26 2008-12-23 Taiwan Semiconductor Manufacturing Corp System and method for inspecting errors on a wafer
US6872942B1 (en) * 2003-04-01 2005-03-29 Kla-Tencor Technologies Corporation High-speed inspection of flat substrates with underlying visible topology
JP4154282B2 (ja) * 2003-05-14 2008-09-24 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
US7132301B1 (en) * 2003-06-19 2006-11-07 Kla-Tencor Technologies Corporation Method and apparatus for reviewing voltage contrast defects in semiconductor wafers
US6931337B2 (en) * 2003-06-24 2005-08-16 International Business Machines Corporation Lithography tool image quality evaluating and correcting
CN100427883C (zh) * 2003-07-11 2008-10-22 应用材料以色列公司 使用参考结构元件测定结构元件的横断面特征的系统和方法
EP1501115B1 (fr) * 2003-07-14 2009-07-01 FEI Company Système à deux faisceaux
WO2005022180A1 (fr) * 2003-08-29 2005-03-10 Aisin Seiki Kabushiki Kaisha Procede et dispositif pour la mesure de la distribution du champ electrique de dispositif a semiconducteur
US6828571B1 (en) * 2003-09-17 2004-12-07 Kla-Tencor Technologies Corporation Apparatus and methods of controlling surface charge and focus
JP2007506981A (ja) * 2003-09-23 2007-03-22 ザイベックス コーポレーション Ｆｉｂで調製した試料を把持する素子を使用した顕微鏡検査のための方法、システム、および装置
US6952106B1 (en) * 2003-10-08 2005-10-04 National Semiconductor Corporation E-beam voltage potential circuit performance library
US7041976B1 (en) * 2003-11-03 2006-05-09 Kla-Tencor Technologies Corporation Automated focusing of electron image
JP4248382B2 (ja) 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
US6980011B1 (en) * 2004-01-13 2005-12-27 Altera Corporation Method and apparatus for detecting electrical failures on a die through maximizing passive voltage contrast on its surface
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US20060038554A1 (en) * 2004-02-12 2006-02-23 Applied Materials, Inc. Electron beam test system stage
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US20050184028A1 (en) * 2004-02-23 2005-08-25 Zyvex Corporation Probe tip processing
JP4537730B2 (ja) * 2004-02-25 2010-09-08 エスアイアイ・ナノテクノロジー株式会社 半導体検査方法及びそのシステム
US7326293B2 (en) * 2004-03-26 2008-02-05 Zyvex Labs, Llc Patterned atomic layer epitaxy
US7232997B2 (en) * 2004-04-15 2007-06-19 Nawotec Gmbh Apparatus and method for investigating or modifying a surface with a beam of charged particles
EP1587128B1 (fr) 2004-04-15 2011-06-08 Carl Zeiss SMS GmbH Dispositif et méthode d'inspection ou de modification d'une surface à l'aide d'un faisceau de particules chargées
KR100607410B1 (ko) * 2004-07-15 2006-08-02 삼성전자주식회사 기판 정렬 방법 및 장치, 이를 이용한 기판의 결함 검사방법 및 장치
US7075323B2 (en) * 2004-07-29 2006-07-11 Applied Materials, Inc. Large substrate test system
US7315022B1 (en) * 2004-08-02 2008-01-01 Kla-Tencor Technologies Corporation High-speed electron beam inspection
US7256606B2 (en) * 2004-08-03 2007-08-14 Applied Materials, Inc. Method for testing pixels for LCD TFT displays
US7067807B2 (en) * 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
US7038474B2 (en) * 2004-09-24 2006-05-02 International Business Machines Corporation Laser-induced critical parameter analysis of CMOS devices
KR100567625B1 (ko) 2004-10-19 2006-04-04 삼성전자주식회사 결함 검사 방법 및 이를 수행하기 위한 장치
JP4842533B2 (ja) * 2004-10-27 2011-12-21 株式会社日立ハイテクノロジーズ 不良検査装置
JP4895569B2 (ja) 2005-01-26 2012-03-14 株式会社日立ハイテクノロジーズ 帯電制御装置及び帯電制御装置を備えた計測装置
US7235768B1 (en) * 2005-02-28 2007-06-26 United States Of America As Represented By The Secretary Of The Air Force Solid state vision enhancement device
US7253410B1 (en) 2005-03-16 2007-08-07 Kla-Tencor Technologies Corporation Charge-control pre-scanning for e-beam imaging
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
KR100846783B1 (ko) * 2005-11-30 2008-07-16 삼성전자주식회사 불량기판 검출장치 및 방법
US7560939B1 (en) 2006-02-17 2009-07-14 Kla-Tencor Technologies Corporation Electrical defect detection using pre-charge and sense scanning with prescribed delays
CN102353890B (zh) * 2006-03-14 2014-09-24 应用材料公司 减小多个柱状电子束测试系统中的串扰的方法
JP4812484B2 (ja) * 2006-03-24 2011-11-09 株式会社日立ハイテクノロジーズ ボルテージコントラストを伴った欠陥をレビューする方法およびその装置
US7786742B2 (en) * 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US7602199B2 (en) * 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
JP4908934B2 (ja) * 2006-06-08 2012-04-04 株式会社日立ハイテクノロジーズ 半導体ウェーハ検査装置および半導体ウェーハ検査方法
US7488938B1 (en) * 2006-08-23 2009-02-10 Kla-Tencor Technologies Corporation Charge-control method and apparatus for electron beam imaging
JP4789260B2 (ja) * 2006-08-23 2011-10-12 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及びアパーチャの軸調整方法
US20080099675A1 (en) * 2006-10-31 2008-05-01 Hitachi High-Technologies Corporation Inspection apparatus and an inspection method
US7525325B1 (en) * 2006-12-18 2009-04-28 Sandia Corporation System and method for floating-substrate passive voltage contrast
JP4876001B2 (ja) * 2007-03-06 2012-02-15 エルピーダメモリ株式会社 半導体デバイス評価方法及び半導体デバイス評価装置
US7917244B2 (en) * 2007-03-14 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing critical dimension side-to-side tilting error
JP5103050B2 (ja) * 2007-04-06 2012-12-19 株式会社日立ハイテクノロジーズ 電子線応用装置
US7835564B2 (en) * 2007-04-30 2010-11-16 International Business Machines Corporation Non-destructive, below-surface defect rendering using image intensity analysis
US7453273B1 (en) * 2007-05-16 2008-11-18 Xilinx, Inc. Method and apparatus for analyzing current in an integrated circuit under test
JP4606443B2 (ja) * 2007-08-10 2011-01-05 株式会社日立製作所 荷電粒子線を用いた回路パターン用基板検査方法および基板検査装置
JP2009099540A (ja) * 2007-09-27 2009-05-07 Hitachi High-Technologies Corp 試料の検査，測定方法、及び走査電子顕微鏡
US7994476B2 (en) * 2007-11-05 2011-08-09 Applied Materials Israel, Ltd. Apparatus and method for enhancing voltage contrast of a wafer
US8525123B2 (en) * 2008-01-14 2013-09-03 International Business Machines Corporation Charging-free electron beam cure of dielectric material
JP4728361B2 (ja) * 2008-03-06 2011-07-20 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
US7858955B2 (en) * 2008-06-25 2010-12-28 Axcelis Technologies, Inc. System and method of controlling broad beam uniformity
CN101929965B (zh) * 2008-09-04 2012-09-05 汉民微测科技股份有限公司 带电粒子检测装置及检测方法
US8884224B2 (en) * 2009-04-08 2014-11-11 Hermes Microvision, Inc. Charged particle beam imaging assembly and imaging method thereof
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
JP2011154918A (ja) * 2010-01-28 2011-08-11 Hitachi High-Technologies Corp 荷電粒子線装置
JP5188529B2 (ja) * 2010-03-30 2013-04-24 株式会社日立ハイテクノロジーズ 電子ビーム照射方法、及び走査電子顕微鏡
US8791414B2 (en) * 2010-04-21 2014-07-29 Hermes Microvision, Inc. Dynamic focus adjustment with optical height detection apparatus in electron beam system
US8841933B2 (en) * 2010-09-09 2014-09-23 International Business Machines Corporation Inspection tool and methodology for three dimensional voltage contrast inspection
JP5341924B2 (ja) 2011-01-28 2013-11-13 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
US9046475B2 (en) * 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
KR20140028701A (ko) 2012-08-30 2014-03-10 삼성전자주식회사 반도체 소자의 검사 방법 및 이에 사용되는 반도체 검사 장비
DE102013011491A1 (de) * 2013-07-09 2015-01-29 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Partikelstrahlmikroskops und Partikelstrahlmikroskop
JP6239633B2 (ja) * 2013-09-26 2017-11-29 株式会社日立ハイテクノロジーズ 荷電粒子線装置
CN103811369B (zh) * 2013-10-21 2016-09-07 上海华力微电子有限公司 铜连接孔刻蚀不足缺陷在线检测方法
US9165742B1 (en) 2014-10-10 2015-10-20 Kla-Tencor Corporation Inspection site preparation
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
DE102015202172B4 (de) * 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US10643819B2 (en) 2015-03-24 2020-05-05 Kla-Tencor Corporation Method and system for charged particle microscopy with improved image beam stabilization and interrogation
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9646961B1 (en) 2016-04-04 2017-05-09 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and metal-short-configured, NCEM-enabled fill cells
US10460903B2 (en) * 2016-04-04 2019-10-29 Kla-Tencor Corporation Method and system for charge control for imaging floating metal structures on non-conducting substrates
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
JP6885576B2 (ja) * 2017-01-19 2021-06-16 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US10578669B2 (en) * 2017-07-10 2020-03-03 Deny Hanan Portable device for soft errors testing
KR102535162B1 (ko) * 2017-09-29 2023-05-26 에이에스엠엘 네델란즈 비.브이. 다중 하전 입자 빔으로 샘플을 검사하는 방법
KR102478945B1 (ko) * 2018-04-25 2022-12-19 주식회사 히타치하이테크 하전 입자선 장치의 조사 조건 결정 방법, 및 하전 입자선 장치
US20200194223A1 (en) * 2018-12-14 2020-06-18 Kla Corporation Joint Electron-Optical Columns for Flood-Charging and Image-Forming in Voltage Contrast Wafer Inspections
JP7231738B2 (ja) * 2018-12-31 2023-03-01 エーエスエムエル ネザーランズ ビー．ブイ． 複数ビームを用いたインレンズウェーハプリチャージ及び検査
US11133152B2 (en) 2019-03-21 2021-09-28 Applied Materials, Inc. Methods and apparatus for performing profile metrology on semiconductor structures
US11035899B2 (en) * 2019-05-15 2021-06-15 Globalfoundries Singapore Pte. Ltd. System for detection of passive voltage contrast
US20230012946A1 (en) * 2019-12-19 2023-01-19 Asml Netherlands B.V. System and method for defect inspection using voltage contrast in a charged particle system
JP7458958B2 (ja) * 2020-10-14 2024-04-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417203A (en) * 1981-05-26 1983-11-22 International Business Machines Corporation System for contactless electrical property testing of multi-layer ceramics
JPS593942A (ja) * 1982-06-29 1984-01-10 Toshiba Corp 半導体欠陥検査装置
US4843330A (en) * 1986-10-30 1989-06-27 International Business Machines Corporation Electron beam contactless testing system with grid bias switching
JPS63150844A (ja) * 1986-12-16 1988-06-23 Toshiba Corp 画像改善方法
EP0504944B1 (fr) * 1991-03-22 1998-09-23 Nec Corporation Procédé d'analyse de fautes utilisant un faisceau d'électrons
JP3148353B2 (ja) 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JPH053011A (ja) * 1991-06-21 1993-01-08 Sanyo Electric Co Ltd 電子顕微鏡装置
JP2768069B2 (ja) * 1991-08-20 1998-06-25 日本電気株式会社 集積回路の故障解析方法
JP2911281B2 (ja) * 1991-11-27 1999-06-23 株式会社日立製作所 電子線装置およびその観察方法
JPH05205688A (ja) * 1992-01-28 1993-08-13 Toshiba Corp 走査型電子顕微鏡
JP3730263B2 (ja) 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US5401972A (en) 1993-09-02 1995-03-28 Schlumberger Technologies, Inc. Layout overlay for FIB operations
US5493116A (en) 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
JP3478612B2 (ja) * 1993-11-16 2003-12-15 浜松ホトニクス株式会社 半導体デバイス検査システム
JPH09184715A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd パターン形状検査装置
JPH09320505A (ja) * 1996-03-29 1997-12-12 Hitachi Ltd 電子線式検査方法及びその装置並びに半導体の製造方法及びその製造ライン
JPH09270447A (ja) * 1996-03-29 1997-10-14 Toshiba Corp 結晶欠陥検出装置
KR19980021213A (ko) * 1996-09-14 1998-06-25 김광호 반도체 웨이퍼 상의 결함 검사방법
US5945833A (en) * 1996-11-27 1999-08-31 University Of Massachusetts Method for testing semiconductor devices which measures internal potential distribution, internal electric field, and internal doping profile
KR100544222B1 (ko) * 1997-01-13 2006-04-28 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼의 결함을 검출하는 방법 및 장치
US5869833A (en) * 1997-01-16 1999-02-09 Kla-Tencor Corporation Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
JPH11174008A (ja) * 1997-12-15 1999-07-02 Hitachi Ltd 荷電粒子装置
US6252412B1 (en) * 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
CN1122281C (zh) * 2001-06-30 2003-09-24 深圳市朗科科技有限公司 一种多功能半导体存储装置
JP5869979B2 (ja) * 2012-07-25 2016-02-24 矢崎総業株式会社 端子付き電線

Also Published As

Publication number Publication date
US6344750B1 (en) 2002-02-05
US6566897B2 (en) 2003-05-20
DE10000365B4 (de) 2010-07-01
US20020149381A1 (en) 2002-10-17
TW461964B (en) 2001-11-01
JP2012104836A (ja) 2012-05-31
JP5539294B2 (ja) 2014-07-02
FR2791776A1 (fr) 2000-10-06
JP2000208085A (ja) 2000-07-28
KR20000052614A (ko) 2000-08-25
KR100653499B1 (ko) 2006-12-04
DE10000365A1 (de) 2000-07-13

Similar Documents

Publication Publication Date Title
FR2791776B1 (fr) Procede et appareil a contraste de tension pour inspecter des semi-conducteurs en utilisant un faisceau de particules a basse tension
NO20031676D0 (no) Apparat og fremgangsmåte for sveiseskjöt inspeksjon
AU2003235507A8 (en) Charged particle beam apparatus and method for inspecting samples
DE69720864D1 (de) Vorrichtung zum Rohrschweissnachprüfen
DE69632506D1 (de) Verfahren und Vorrichtung zum Aufsaugen und Abgeben von Probenflüssigkeiten
DE69912577D1 (de) Vorrichtung und verfahren zur optischen inspektion
DE60121701D1 (de) Verfahren und Vorrichtung zum Nachrichtendienst
FR2811429B1 (fr) Procede et appareil pour evaluer un signal de test par courant de foucault
DE60128423D1 (de) Elektrodeionisierungsvorrichtung und Verfahren zu deren Betrieb
DE69933915D1 (de) Plasma-Anzeige-Vorrichtung und Verfahren zu deren Zerlegung
DE60141796D1 (de) Verfahren und Vorrichtung zur Ladungsträgerstrahlbelichtung
DE60129594D1 (de) Vorrichtung zur reinigung von wasser, welches gelöste organische substanzen sowie spuren schädlicher stoffe enthält
EE9900242A (et) Meetod ja seade anuma suudme kontrollimiseks
FR2751077B1 (fr) Procede et dispositif pour tester des tournevis
BR9904717B1 (pt) aparelho e método para inspecionar recipientes.
FR2760533B1 (fr) Appareil et procede de caracterisation de liquides
FR2840412B1 (fr) Dispositif et procede d'inspection d'un faisceau ionisant
DE50112413D1 (de) Verfahren und vorrichtung zur optischen inspektion von flaschen
FR2779829B1 (fr) Appareil et procede pour inspecter des defauts de contact sur des dispositifs a semi-conducteur
DE69728197D1 (de) Verfahren und Gerät zum Ionenstrahltransport
DK0708326T3 (da) Apparat til inspektion af sammensvejsede pladesektioner
DE69913331D1 (de) Verfahren und vorrichtung zum strahlmahlen
DE59901114D1 (de) Verfahren und vorrichtung zum verdampfen von flüssigem sauerstoff
FR2833716B1 (fr) Dispositif optique et procede optique pour le deplacement de particules
FR2774240B1 (fr) Procede et appareil permettant une transmission discontinue

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20140930