FR2779829B1 - Appareil et procede pour inspecter des defauts de contact sur des dispositifs a semi-conducteur - Google Patents

Appareil et procede pour inspecter des defauts de contact sur des dispositifs a semi-conducteur

Info

Publication number
FR2779829B1
FR2779829B1 FR9816252A FR9816252A FR2779829B1 FR 2779829 B1 FR2779829 B1 FR 2779829B1 FR 9816252 A FR9816252 A FR 9816252A FR 9816252 A FR9816252 A FR 9816252A FR 2779829 B1 FR2779829 B1 FR 2779829B1
Authority
FR
France
Prior art keywords
semiconductor devices
contact faults
inspecting contact
inspecting
faults
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9816252A
Other languages
English (en)
Other versions
FR2779829A1 (fr
Inventor
Chung Sam Jun
Jeong Kon Kim
Sang Moon Chon
Sang Bong Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/162,267 external-priority patent/US6366688B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2779829A1 publication Critical patent/FR2779829A1/fr
Application granted granted Critical
Publication of FR2779829B1 publication Critical patent/FR2779829B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
FR9816252A 1998-06-13 1998-12-22 Appareil et procede pour inspecter des defauts de contact sur des dispositifs a semi-conducteur Expired - Fee Related FR2779829B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980022213 1998-06-13
US09/162,267 US6366688B1 (en) 1998-06-13 1998-09-29 Apparatus and method for contact failure inspection in semiconductor devices

Publications (2)

Publication Number Publication Date
FR2779829A1 FR2779829A1 (fr) 1999-12-17
FR2779829B1 true FR2779829B1 (fr) 2001-12-14

Family

ID=26633750

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9816252A Expired - Fee Related FR2779829B1 (fr) 1998-06-13 1998-12-22 Appareil et procede pour inspecter des defauts de contact sur des dispositifs a semi-conducteur

Country Status (9)

Country Link
JP (1) JP4522503B2 (fr)
KR (1) KR100295057B1 (fr)
CN (1) CN1213469C (fr)
DE (1) DE19860704B4 (fr)
FR (1) FR2779829B1 (fr)
GB (1) GB2338297B (fr)
IL (1) IL127356A (fr)
SG (1) SG83111A1 (fr)
TW (1) TW402769B (fr)

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DE10103061B4 (de) * 2001-01-24 2010-04-08 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Inspektion der Tiefe einer Öffnung in einer dielektrischen Materialschicht
JP2002231780A (ja) 2001-01-30 2002-08-16 Jeol Ltd 荷電粒子ビームを用いたホールの検査方法
JP3698075B2 (ja) 2001-06-20 2005-09-21 株式会社日立製作所 半導体基板の検査方法およびその装置
JP4515020B2 (ja) * 2002-09-20 2010-07-28 大日本印刷株式会社 擬似ｓｅｍ画像データの生成方法およびフォトマスクの欠陥検査方法
US7477960B2 (en) * 2005-02-16 2009-01-13 Tokyo Electron Limited Fault detection and classification (FDC) using a run-to-run controller
CN100423188C (zh) * 2005-12-09 2008-10-01 北京北方微电子基地设备工艺研究中心有限责任公司 一种晶片刻蚀工艺中的故障检测方法
CN100442066C (zh) * 2005-12-13 2008-12-10 上海华虹Nec电子有限公司 一种beol测试芯片在线失效分析的方法
US7439084B2 (en) * 2006-02-17 2008-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Predictions of leakage modes in integrated circuits
JP5455694B2 (ja) * 2010-02-09 2014-03-26 株式会社日立ハイテクノロジーズ 荷電粒子線装置
TW201219803A (en) * 2010-11-09 2012-05-16 E Max Prec Technology Co Ltd employing cooperation of host computer with four slave computers to enhance working efficiency and simplify processing procedures
US9536700B2 (en) 2013-04-22 2017-01-03 Hitachi High-Technologies Corporation Sample observation device
CN104091795B (zh) * 2014-07-25 2017-03-01 上海华力微电子有限公司 Cmos中n型源漏注入对准度的监控结构及方法
JP7042071B2 (ja) * 2016-12-20 2022-03-25 エフ・イ－・アイ・カンパニー ｅビーム操作用の局部的に排気された容積を用いる集積回路解析システムおよび方法
US11275975B2 (en) * 2017-10-05 2022-03-15 Applied Materials, Inc. Fault detection classification
CN109444713A (zh) * 2018-11-13 2019-03-08 无锡中微腾芯电子有限公司 一种晶圆测试接触故障诊断方法
US11749569B2 (en) 2020-05-06 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for non-destructive inspection of cell etch redeposition

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JPS61124810A (ja) * 1984-11-22 1986-06-12 Hitachi Ltd パタ−ン形状検査装置
US4755748A (en) * 1985-06-05 1988-07-05 Bell Communications Research, Inc. Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
JPH07111335B2 (ja) * 1990-02-07 1995-11-29 株式会社東芝 パターン形状測定方法及び装置
GB2282480B (en) * 1990-07-05 1995-07-26 Olivetti Systems & Networks S Integrated circuit structure analysis
US5199054A (en) * 1990-08-30 1993-03-30 Four Pi Systems Corporation Method and apparatus for high resolution inspection of electronic items
US5412210A (en) * 1990-10-12 1995-05-02 Hitachi, Ltd. Scanning electron microscope and method for production of semiconductor device by using the same
JP3285092B2 (ja) * 1990-10-12 2002-05-27 株式会社日立製作所 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法
JP3034975B2 (ja) * 1991-03-26 2000-04-17 株式会社東芝 パターン特徴抽出方法
EP0949653B1 (fr) * 1991-11-27 2010-02-17 Hitachi, Ltd. Appareil à faisceau d'électrons
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JP2802571B2 (ja) * 1993-03-23 1998-09-24 株式会社日立製作所 電子線測長装置
JPH06295330A (ja) * 1993-04-08 1994-10-21 Toshiba Corp 画像処理方法
JPH06325181A (ja) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp パターン認識方法
JPH06347246A (ja) * 1993-06-07 1994-12-20 Hitachi Ltd 測長機能を備えた走査電子顕微鏡
JP2934931B2 (ja) * 1993-06-16 1999-08-16 茨木精機株式会社 包装装置
US5544256A (en) * 1993-10-22 1996-08-06 International Business Machines Corporation Automated defect classification system
US5493116A (en) * 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
US5477049A (en) * 1994-01-21 1995-12-19 Seiko Instruments Inc. Particle analysis method
JP3490490B2 (ja) * 1994-01-28 2004-01-26 株式会社東芝 パターン画像処理装置及び画像処理方法
JPH07225258A (ja) * 1994-02-10 1995-08-22 Toshiba Corp 半導体装置
DE19526194C2 (de) * 1994-07-18 2002-11-07 Advantest Corp Verfahren zur Feststellung eines Fehlers eines ICs unter Verwendung eines Strahls geladener Teilchen
US5659172A (en) * 1995-06-21 1997-08-19 Opal Technologies Ltd. Reliable defect detection using multiple perspective scanning electron microscope images
EP1909318A3 (fr) * 1996-03-19 2009-12-09 Hitachi, Ltd. Système de gestion de processus
JP3436456B2 (ja) * 1996-06-14 2003-08-11 三菱電機株式会社 エミッション顕微鏡による半導体装置の故障解析方法及び半導体装置故障解析システム
JPH102867A (ja) * 1996-06-18 1998-01-06 Nec Corp 微細パターン欠陥検査装置
KR100217327B1 (ko) * 1996-07-30 1999-10-01 윤종용 반도체장치 콘택 오픈 검사 방법
JPH10107102A (ja) * 1996-10-02 1998-04-24 Hitachi Ltd 半導体デバイス製造における検査方法、その検査装置、および、半導体製造方法

Also Published As

Publication number Publication date
KR100295057B1 (ko) 2001-07-12
CN1213469C (zh) 2005-08-03
CN1239321A (zh) 1999-12-22
DE19860704A1 (de) 1999-12-23
FR2779829A1 (fr) 1999-12-17
JP4522503B2 (ja) 2010-08-11
JP2000058608A (ja) 2000-02-25
KR20000005632A (ko) 2000-01-25
IL127356A (en) 2003-04-10
SG83111A1 (en) 2001-09-18
TW402769B (en) 2000-08-21
DE19860704B4 (de) 2009-07-30
GB2338297A (en) 1999-12-15
IL127356A0 (en) 1999-10-28
GB9827562D0 (en) 1999-02-10
GB2338297B (en) 2003-03-19

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Effective date: 20090831