SG83111A1 - Apparatus and method for contact failure inspection in semiconductor devices - Google Patents

Apparatus and method for contact failure inspection in semiconductor devices

Info

Publication number
SG83111A1
SG83111A1 SG9805934A SG1998005934A SG83111A1 SG 83111 A1 SG83111 A1 SG 83111A1 SG 9805934 A SG9805934 A SG 9805934A SG 1998005934 A SG1998005934 A SG 1998005934A SG 83111 A1 SG83111 A1 SG 83111A1
Authority
SG
Singapore
Prior art keywords
semiconductor devices
contact failure
failure inspection
inspection
contact
Prior art date
Application number
SG9805934A
Inventor
Jun Chung-Sam
Kim Jeong-Kon
Chon Sang-Moon
Choi Sang-Bong
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/162,267 external-priority patent/US6366688B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG83111A1 publication Critical patent/SG83111A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Tests Of Electronic Circuits (AREA)
SG9805934A 1998-06-13 1998-12-23 Apparatus and method for contact failure inspection in semiconductor devices SG83111A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980022213 1998-06-13
US09/162,267 US6366688B1 (en) 1998-06-13 1998-09-29 Apparatus and method for contact failure inspection in semiconductor devices

Publications (1)

Publication Number Publication Date
SG83111A1 true SG83111A1 (en) 2001-09-18

Family

ID=26633750

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9805934A SG83111A1 (en) 1998-06-13 1998-12-23 Apparatus and method for contact failure inspection in semiconductor devices

Country Status (9)

Country Link
JP (1) JP4522503B2 (en)
KR (1) KR100295057B1 (en)
CN (1) CN1213469C (en)
DE (1) DE19860704B4 (en)
FR (1) FR2779829B1 (en)
GB (1) GB2338297B (en)
IL (1) IL127356A (en)
SG (1) SG83111A1 (en)
TW (1) TW402769B (en)

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DE10103061B4 (en) * 2001-01-24 2010-04-08 Advanced Micro Devices, Inc., Sunnyvale A method of inspecting the depth of an opening in a dielectric material layer
JP2002231780A (en) 2001-01-30 2002-08-16 Jeol Ltd Method for inspecting hole by using charged particle beam
JP3698075B2 (en) 2001-06-20 2005-09-21 株式会社日立製作所 Semiconductor substrate inspection method and apparatus
JP4515020B2 (en) * 2002-09-20 2010-07-28 大日本印刷株式会社 Pseudo-SEM image data generation method and photomask defect inspection method
US7477960B2 (en) * 2005-02-16 2009-01-13 Tokyo Electron Limited Fault detection and classification (FDC) using a run-to-run controller
CN100423188C (en) * 2005-12-09 2008-10-01 北京北方微电子基地设备工艺研究中心有限责任公司 Fault detection method in chip etching technology
CN100442066C (en) * 2005-12-13 2008-12-10 上海华虹Nec电子有限公司 Method for analyzing BEOL testing chip on-line failure
US7439084B2 (en) * 2006-02-17 2008-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Predictions of leakage modes in integrated circuits
JP5455694B2 (en) * 2010-02-09 2014-03-26 株式会社日立ハイテクノロジーズ Charged particle beam equipment
TW201219803A (en) * 2010-11-09 2012-05-16 E Max Prec Technology Co Ltd employing cooperation of host computer with four slave computers to enhance working efficiency and simplify processing procedures
JP6068624B2 (en) * 2013-04-22 2017-01-25 株式会社日立ハイテクノロジーズ Sample observation device
CN104091795B (en) * 2014-07-25 2017-03-01 上海华力微电子有限公司 In CMOS, N-type source and drain injects monitoring structure and the method for Aligning degree
JP7042071B2 (en) * 2016-12-20 2022-03-25 エフ・イ－・アイ・カンパニー Integrated circuit analysis system and method using locally exhausted volume for e-beam operation
US11275975B2 (en) * 2017-10-05 2022-03-15 Applied Materials, Inc. Fault detection classification
CN109444713A (en) * 2018-11-13 2019-03-08 无锡中微腾芯电子有限公司 A kind of wafer test contact fault diagnostic method
US11749569B2 (en) 2020-05-06 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for non-destructive inspection of cell etch redeposition
DE102020125929A1 (en) * 2020-05-06 2021-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. PROCEDURE FOR NON-DESTRUCTIVE VERIFICATION OF PARASITAR ETCH DEPOSIT ON CELLS
CN114068341B (en) * 2020-08-06 2024-06-28 长鑫存储技术有限公司 Test method and test system

Citations (4)

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Publication number Priority date Publication date Assignee Title
US4755748A (en) * 1985-06-05 1988-07-05 Bell Communications Research, Inc. Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
US5659172A (en) * 1995-06-21 1997-08-19 Opal Technologies Ltd. Reliable defect detection using multiple perspective scanning electron microscope images
JPH102867A (en) * 1996-06-18 1998-01-06 Nec Corp Fine pattern defect inspecting device
JPH10107102A (en) * 1996-10-02 1998-04-24 Hitachi Ltd Inspection method and device for manufacturing semiconductor device and semiconductor manufacturing method

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JPS61124810A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Pattern shape inspecting apparatus
JPH07111335B2 (en) * 1990-02-07 1995-11-29 株式会社東芝 Pattern shape measuring method and apparatus
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US5199054A (en) * 1990-08-30 1993-03-30 Four Pi Systems Corporation Method and apparatus for high resolution inspection of electronic items
US5412210A (en) * 1990-10-12 1995-05-02 Hitachi, Ltd. Scanning electron microscope and method for production of semiconductor device by using the same
JP3285092B2 (en) * 1990-10-12 2002-05-27 株式会社日立製作所 Scanning electron microscope and sample image forming method using scanning electron microscope
JP3034975B2 (en) * 1991-03-26 2000-04-17 株式会社東芝 Pattern feature extraction method
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JP3730263B2 (en) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション Apparatus and method for automatic substrate inspection using charged particle beam
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JPH06295330A (en) * 1993-04-08 1994-10-21 Toshiba Corp Picture processing method
JPH06325181A (en) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp Pattern recognizing method
JPH06347246A (en) * 1993-06-07 1994-12-20 Hitachi Ltd Scanning electron microscope provided with length-measuring function
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US5544256A (en) * 1993-10-22 1996-08-06 International Business Machines Corporation Automated defect classification system
US5493116A (en) * 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
US5477049A (en) * 1994-01-21 1995-12-19 Seiko Instruments Inc. Particle analysis method
JP3490490B2 (en) * 1994-01-28 2004-01-26 株式会社東芝 Pattern image processing apparatus and image processing method
JPH07225258A (en) * 1994-02-10 1995-08-22 Toshiba Corp Semiconductor device
DE19526194C2 (en) * 1994-07-18 2002-11-07 Advantest Corp Method for detecting an error in an IC using a charged particle beam
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KR100217327B1 (en) * 1996-07-30 1999-10-01 윤종용 Contact open testing method for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755748A (en) * 1985-06-05 1988-07-05 Bell Communications Research, Inc. Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
US5659172A (en) * 1995-06-21 1997-08-19 Opal Technologies Ltd. Reliable defect detection using multiple perspective scanning electron microscope images
JPH102867A (en) * 1996-06-18 1998-01-06 Nec Corp Fine pattern defect inspecting device
JPH10107102A (en) * 1996-10-02 1998-04-24 Hitachi Ltd Inspection method and device for manufacturing semiconductor device and semiconductor manufacturing method

Also Published As

Publication number Publication date
FR2779829A1 (en) 1999-12-17
GB2338297B (en) 2003-03-19
KR20000005632A (en) 2000-01-25
DE19860704A1 (en) 1999-12-23
KR100295057B1 (en) 2001-07-12
IL127356A0 (en) 1999-10-28
CN1239321A (en) 1999-12-22
GB2338297A (en) 1999-12-15
TW402769B (en) 2000-08-21
DE19860704B4 (en) 2009-07-30
JP4522503B2 (en) 2010-08-11
GB9827562D0 (en) 1999-02-10
FR2779829B1 (en) 2001-12-14
JP2000058608A (en) 2000-02-25
CN1213469C (en) 2005-08-03
IL127356A (en) 2003-04-10

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