CN100442066C

CN100442066C - Method for analyzing BEOL testing chip on-line failure

Info

Publication number: CN100442066C
Application number: CNB2005101114180A
Authority: CN
Inventors: 殷建斐
Original assignee: Shanghai Hua Hong NEC Electronics Co Ltd
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2005-12-13
Filing date: 2005-12-13
Publication date: 2008-12-10
Anticipated expiration: 2025-12-13
Also published as: CN1982902A

Abstract

A method for analyzing on-line failure of BEOL test chip includes generating multiple virtual defects by detaching failure structure of characteristic test and integrating these defects to be manner detecting defect result for realizing seek and confirmation as well as analysis on failure position by automatic-scanning electronic microscope.

Description

A kind of method of BEOL testing chip on-line failure

Technical field

The present invention relates to semiconductor fabrication process, relate in particular to the method for a kind of BEOL testing chip on-line failure in the semiconductor technology.

Background technology

The failure analysis of test chip has important effect in semiconductor technology, carry out after generally in the end the layer of metal line is finished.The method that adopts mainly is successively to peel off (De-Layer), by chemical and mechanical grinding method chip is successively peeled off (Polishing) by chemicals, and focused ion beam destructive means such as (FIB).And because open circuit and short circuit (Open﹠amp; Short) etc. test structure commonly used is in order to guarantee certain capture rate, and the size of test structure generally can be more than 1000 microns, if artificial searching can be wasted time and energy very much and success ratio is very low.

Failure analysis method with the test chip in the above-mentioned prior art, though its last test result can reflect the capture rate of each detection layers, but can't be optimized by point-to-point program adjustment at the defective that do not detect that failure analysis (failure analysis is hereinafter to be referred as FA) found.

The last part technology of existing chip production line (back end of line, hereinafter to be referred as BEOL) the method for testing chip on-line failure, have the advantages that destructiveness is strong, efficient is low, success ratio is little, and can't be optimized at the defective adjustment that do not detect that FA has found, have trace routine optimization and feed back shortcomings such as insufficient.

Summary of the invention

Technical matters to be solved by this invention provides a kind of method of BEOL testing chip on-line failure, and it can have no the ground of destruction, fast the defective of failure site is carried out the affirmation of high success rate.Can feed back simultaneously problem points, the defective of having found that do not detect is carried out point-to-point optimization when the trace routine of layer.

For solving the problems of the technologies described above, the method for a kind of BEOL testing chip on-line failure of the present invention may further comprise the steps: the first step, and the silicon chip defect checking machine platform carries out defects detection to silicon chip, and generates the KRF formatted file; In second step, characteristic tester is opened a way and short-circuit test to this piece silicon chip, generates the invalid position file of KRF form; The 3rd step was decomposed into a plurality of zones that the autoscan electron microscope can search with the test structure of each inefficacy in the invalid position file, and was the virtual defective that coordinate generates respective numbers with each regional center respectively; The 4th goes on foot, and the destination file that virtual defective locations that obtains in going on foot the 3rd and silicon chip defect checking machine platform generate is merged into a KRF formatted file, and is sent to the autoscan electron microscope; The 5th step, editor's autoscan electron microscope program, the defective that detects with the silicon chip defect checking machine platform is comprehensively searched the failure structure of characteristic test automatically as the position revisal, finds out defective and confirms analysis; In the 6th step, use current silicon chip that the silicon chip defect checking machine platform is not detected and the defect mode that finds in the failure structure of characteristic test is accurate to trace routine optimization a little.

Compared with the prior art, the method of a kind of BEOL testing chip on-line failure of the present invention generates a plurality of virtual defectives by the failure structure that splits characteristic test, and synthetic board defects detection result's method, realized that the autoscan electron microscope is to detecting searching affirmation and the analysis that board does not detect defective, avoided destructive analysis, and improved analysis efficiency and success ratio silicon chip.Realized real-time feedback simultaneously, improved the efficient and the accuracy rate of program optimization trace routine.

Description of drawings

Below in conjunction with drawings and Examples the present invention is further described:

Fig. 1 is a schematic flow sheet of the present invention;

Fig. 2 generates the synoptic diagram of a plurality of virtual defectives for the failure structure that splits characteristic test.

Embodiment

Fig. 1 is a schematic flow sheet of the present invention.As shown in Figure 1, at first, with the silicon chip defect checking machine platform this piece silicon chip is carried out defects detection in any layer of metal lineman journey, and the defective that detects classified, the silicon chip diverse location select to find easily under the 5-10 spot scan electron microscope and size less than 5 microns defective, and generate KRF format result file ins.krf; With characteristic tester this piece silicon chip is opened a way and short-circuit test then, also generate the invalid position file pcm.krf of KRF form, will guarantee that in said process the silicon chip initial point of ins.krf and pcm.krf and chip initial point are consistent; Fig. 2 generates the synoptic diagram of a plurality of virtual defectives for the failure structure that splits characteristic test.As shown in Figure 2, the test structure of each inefficacy among the pcm.krf is decomposed into several zones that the autoscan electron microscope can detect, and be the virtual defective that coordinate generates respective numbers with each regional center respectively, the virtual defect coordinate that is generated is XREL and YREL, XREL and YREL value increase progressively with 100 respectively, and XREL and YREL are followed successively by: (4300,7600), (4400,7600), (4500,7600), (5700,7600) ... (4300,7700), (4300,7800) ... (5000,8000), (5700,8300), the defect id of each virtual defective is since 101 orderings successively, and the virtual defect coordinate XREL of generation and YREL duplicate for each regional centre coordinate and other project, at last these virtual defect lists are added into the defect list position of ins.krf file, save as total.krf; Total.krf is sent to automatic Review scanning electron microscope, and with this document debugging autoscan electron microscope program, wherein need Max and Extra Max in (ADI Defect Size) in the detection flaw size under defect correcting (Defect Offset) option are made as 5.000, searching window (Search Window) under defective operation (Defect Run) option is made as 110, FOV=10=seeks window Search Window/11, hides the check box of opening big defective option (Enable LargeDefects Section) simultaneously; With the program that debugging is finished the failure structure of characteristic test is comprehensively searched automatically, found out defective and confirm and analyze; The defect mode that uses current silicon chip that the detection board is not detected and find in the failure structure of characteristic test is accurate to the optimization of trace routine targetedly work a little.

Claims

1, a kind of method of BEOL testing chip on-line failure is characterized in that, may further comprise the steps: the first step, and the silicon chip defect checking machine platform carries out defects detection to silicon chip, and generates the test result file of KRF form; Second step, characteristic tester is opened a way and short-circuit test to this piece silicon chip, generate the invalid position file of KRF form: the 3rd step, the test structure of each inefficacy in the invalid position file is decomposed into a plurality of zones that the autoscan electron microscope can search, and is the virtual defective that coordinate generates respective numbers with each regional center respectively; The 4th goes on foot, and the test result file that virtual defective locations that obtains in going on foot the 3rd and first step silicon chip defect checking machine platform generate is merged into the file of a KRF form, and is sent to the autoscan electron microscope; The 5th step, editor's autoscan electron microscope program, the defective that detects with the silicon chip defect checking machine platform is comprehensively searched the failure structure of characteristic test automatically as the position revisal, finds out defective and confirms analysis; In the 6th step, use current silicon chip that the silicon chip defect checking machine platform is not detected and the defect mode that finds in the failure structure of characteristic test is accurate to trace routine optimization a little.

2, the method for a kind of BEOL testing chip on-line failure as claimed in claim 1, it is characterized in that, when utilizing the silicon chip defect checking machine platform that silicon chip is carried out defects detection in the first step, each invalid position that characteristic test is generated is decomposed into the virtual defective that the autoscan electron microscope can search, and selects 5-10 spot scan electron microscope to search easily from the defective that defect checking machine platform detects and size generates the test result file of KRF form less than 5 microns defective.