GB2338297B - Apparatus and method for contact failure inspection in semiconductor devices - Google Patents

Apparatus and method for contact failure inspection in semiconductor devices

Info

Publication number
GB2338297B
GB2338297B GB9827562A GB9827562A GB2338297B GB 2338297 B GB2338297 B GB 2338297B GB 9827562 A GB9827562 A GB 9827562A GB 9827562 A GB9827562 A GB 9827562A GB 2338297 B GB2338297 B GB 2338297B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
contact failure
failure inspection
inspection
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9827562A
Other versions
GB2338297A (en
GB9827562D0 (en
Inventor
Chung-Samjun
Jeong-Kon Kim
Sang-Moon Chon
Sang-Bong Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/162,267 external-priority patent/US6366688B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9827562D0 publication Critical patent/GB9827562D0/en
Publication of GB2338297A publication Critical patent/GB2338297A/en
Application granted granted Critical
Publication of GB2338297B publication Critical patent/GB2338297B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
GB9827562A 1998-06-13 1998-12-16 Apparatus and method for contact failure inspection in semiconductor devices Expired - Fee Related GB2338297B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980022213 1998-06-13
US09/162,267 US6366688B1 (en) 1998-06-13 1998-09-29 Apparatus and method for contact failure inspection in semiconductor devices

Publications (3)

Publication Number Publication Date
GB9827562D0 GB9827562D0 (en) 1999-02-10
GB2338297A GB2338297A (en) 1999-12-15
GB2338297B true GB2338297B (en) 2003-03-19

Family

ID=26633750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9827562A Expired - Fee Related GB2338297B (en) 1998-06-13 1998-12-16 Apparatus and method for contact failure inspection in semiconductor devices

Country Status (9)

Country Link
JP (1) JP4522503B2 (en)
KR (1) KR100295057B1 (en)
CN (1) CN1213469C (en)
DE (1) DE19860704B4 (en)
FR (1) FR2779829B1 (en)
GB (1) GB2338297B (en)
IL (1) IL127356A (en)
SG (1) SG83111A1 (en)
TW (1) TW402769B (en)

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DE10103061B4 (en) * 2001-01-24 2010-04-08 Advanced Micro Devices, Inc., Sunnyvale A method of inspecting the depth of an opening in a dielectric material layer
JP2002231780A (en) 2001-01-30 2002-08-16 Jeol Ltd Method for inspecting hole by using charged particle beam
JP3698075B2 (en) 2001-06-20 2005-09-21 株式会社日立製作所 Semiconductor substrate inspection method and apparatus
JP4515020B2 (en) * 2002-09-20 2010-07-28 大日本印刷株式会社 Pseudo-SEM image data generation method and photomask defect inspection method
US7477960B2 (en) * 2005-02-16 2009-01-13 Tokyo Electron Limited Fault detection and classification (FDC) using a run-to-run controller
CN100423188C (en) * 2005-12-09 2008-10-01 北京北方微电子基地设备工艺研究中心有限责任公司 Fault detection method in chip etching technology
CN100442066C (en) * 2005-12-13 2008-12-10 上海华虹Nec电子有限公司 Method for analyzing BEOL testing chip on-line failure
US7439084B2 (en) * 2006-02-17 2008-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Predictions of leakage modes in integrated circuits
JP5455694B2 (en) * 2010-02-09 2014-03-26 株式会社日立ハイテクノロジーズ Charged particle beam equipment
TW201219803A (en) * 2010-11-09 2012-05-16 E Max Prec Technology Co Ltd employing cooperation of host computer with four slave computers to enhance working efficiency and simplify processing procedures
KR101709433B1 (en) * 2013-04-22 2017-02-22 가부시키가이샤 히다치 하이테크놀로지즈 Sample observation device
CN104091795B (en) * 2014-07-25 2017-03-01 上海华力微电子有限公司 In CMOS, N-type source and drain injects monitoring structure and the method for Aligning degree
JP7042071B2 (en) * 2016-12-20 2022-03-25 エフ・イ－・アイ・カンパニー Integrated circuit analysis system and method using locally exhausted volume for e-beam operation
US11275975B2 (en) * 2017-10-05 2022-03-15 Applied Materials, Inc. Fault detection classification
CN109444713A (en) * 2018-11-13 2019-03-08 无锡中微腾芯电子有限公司 A kind of wafer test contact fault diagnostic method
DE102020125929A1 (en) * 2020-05-06 2021-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. PROCEDURE FOR NON-DESTRUCTIVE VERIFICATION OF PARASITAR ETCH DEPOSIT ON CELLS
US11749569B2 (en) 2020-05-06 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for non-destructive inspection of cell etch redeposition

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GB2247345A (en) * 1990-07-05 1992-02-26 Haroon Ahmed Integrated circuit structure analysis.
WO1992004620A2 (en) * 1990-08-30 1992-03-19 Four Pi Systems Corporation Method and apparatus for high resolution inspection of electronic items
EP0480424A2 (en) * 1990-10-12 1992-04-15 Hitachi, Ltd. Scanning electron microscope and method for production of semiconductor device by using the same
JPH06347246A (en) * 1993-06-07 1994-12-20 Hitachi Ltd Scanning electron microscope provided with length-measuring function
JPH072207A (en) * 1993-06-16 1995-01-06 Ibaraki Seiki Kk Packaging method and packaging device
US5412210A (en) * 1990-10-12 1995-05-02 Hitachi, Ltd. Scanning electron microscope and method for production of semiconductor device by using the same
US5477049A (en) * 1994-01-21 1995-12-19 Seiko Instruments Inc. Particle analysis method
US5578821A (en) * 1992-05-27 1996-11-26 Kla Instruments Corporation Electron beam inspection system and method
EP0810629A1 (en) * 1991-11-27 1997-12-03 Hitachi, Ltd. Electron beam apparatus
US5887080A (en) * 1994-01-28 1999-03-23 Kabushiki Kaisha Toshiba Method and apparatus for processing pattern image data by SEM

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JPS61124810A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Pattern shape inspecting apparatus
US4755748A (en) * 1985-06-05 1988-07-05 Bell Communications Research, Inc. Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
JPH07111335B2 (en) * 1990-02-07 1995-11-29 株式会社東芝 Pattern shape measuring method and apparatus
JP3034975B2 (en) * 1991-03-26 2000-04-17 株式会社東芝 Pattern feature extraction method
JP2802571B2 (en) * 1993-03-23 1998-09-24 株式会社日立製作所 Electron beam length measuring device
JPH06295330A (en) * 1993-04-08 1994-10-21 Toshiba Corp Picture processing method
JPH06325181A (en) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp Pattern recognizing method
US5544256A (en) * 1993-10-22 1996-08-06 International Business Machines Corporation Automated defect classification system
US5493116A (en) * 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
JPH07225258A (en) * 1994-02-10 1995-08-22 Toshiba Corp Semiconductor device
DE19526194C2 (en) * 1994-07-18 2002-11-07 Advantest Corp Method for detecting an error in an IC using a charged particle beam
US5659172A (en) * 1995-06-21 1997-08-19 Opal Technologies Ltd. Reliable defect detection using multiple perspective scanning electron microscope images
US6542830B1 (en) * 1996-03-19 2003-04-01 Hitachi, Ltd. Process control system
JP3436456B2 (en) * 1996-06-14 2003-08-11 三菱電機株式会社 Failure analysis method for semiconductor device using emission microscope and failure analysis system for semiconductor device
JPH102867A (en) * 1996-06-18 1998-01-06 Nec Corp Fine pattern defect inspecting device
KR100217327B1 (en) * 1996-07-30 1999-10-01 윤종용 Contact open testing method for semiconductor device
JPH10107102A (en) * 1996-10-02 1998-04-24 Hitachi Ltd Inspection method and device for manufacturing semiconductor device and semiconductor manufacturing method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2247345A (en) * 1990-07-05 1992-02-26 Haroon Ahmed Integrated circuit structure analysis.
WO1992004620A2 (en) * 1990-08-30 1992-03-19 Four Pi Systems Corporation Method and apparatus for high resolution inspection of electronic items
EP0480424A2 (en) * 1990-10-12 1992-04-15 Hitachi, Ltd. Scanning electron microscope and method for production of semiconductor device by using the same
US5412210A (en) * 1990-10-12 1995-05-02 Hitachi, Ltd. Scanning electron microscope and method for production of semiconductor device by using the same
EP0810629A1 (en) * 1991-11-27 1997-12-03 Hitachi, Ltd. Electron beam apparatus
US5578821A (en) * 1992-05-27 1996-11-26 Kla Instruments Corporation Electron beam inspection system and method
JPH06347246A (en) * 1993-06-07 1994-12-20 Hitachi Ltd Scanning electron microscope provided with length-measuring function
JPH072207A (en) * 1993-06-16 1995-01-06 Ibaraki Seiki Kk Packaging method and packaging device
US5477049A (en) * 1994-01-21 1995-12-19 Seiko Instruments Inc. Particle analysis method
US5887080A (en) * 1994-01-28 1999-03-23 Kabushiki Kaisha Toshiba Method and apparatus for processing pattern image data by SEM

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WPI Acc. No. 95-070910 & JP 06-347246 *

Also Published As

Publication number Publication date
FR2779829B1 (en) 2001-12-14
TW402769B (en) 2000-08-21
JP4522503B2 (en) 2010-08-11
KR20000005632A (en) 2000-01-25
FR2779829A1 (en) 1999-12-17
DE19860704B4 (en) 2009-07-30
DE19860704A1 (en) 1999-12-23
GB2338297A (en) 1999-12-15
IL127356A (en) 2003-04-10
KR100295057B1 (en) 2001-07-12
CN1213469C (en) 2005-08-03
SG83111A1 (en) 2001-09-18
JP2000058608A (en) 2000-02-25
CN1239321A (en) 1999-12-22
GB9827562D0 (en) 1999-02-10
IL127356A0 (en) 1999-10-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20081216