FR2782415B1 - Dipositif de memoire a semiconducteur haute densite et son procede de fabrication - Google Patents

Dipositif de memoire a semiconducteur haute densite et son procede de fabrication

Info

Publication number
FR2782415B1
FR2782415B1 FR9902409A FR9902409A FR2782415B1 FR 2782415 B1 FR2782415 B1 FR 2782415B1 FR 9902409 A FR9902409 A FR 9902409A FR 9902409 A FR9902409 A FR 9902409A FR 2782415 B1 FR2782415 B1 FR 2782415B1
Authority
FR
France
Prior art keywords
dipositive
semiconductor memory
high density
manufacturing same
density semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9902409A
Other languages
English (en)
Other versions
FR2782415A1 (fr
Inventor
Nam Kim Ki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2782415A1 publication Critical patent/FR2782415A1/fr
Application granted granted Critical
Publication of FR2782415B1 publication Critical patent/FR2782415B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
FR9902409A 1998-08-14 1999-02-26 Dipositif de memoire a semiconducteur haute densite et son procede de fabrication Expired - Fee Related FR2782415B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980033151A KR100268419B1 (ko) 1998-08-14 1998-08-14 고집적 반도체 메모리 장치 및 그의 제조 방법

Publications (2)

Publication Number Publication Date
FR2782415A1 FR2782415A1 (fr) 2000-02-18
FR2782415B1 true FR2782415B1 (fr) 2005-02-11

Family

ID=19547322

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9902409A Expired - Fee Related FR2782415B1 (fr) 1998-08-14 1999-02-26 Dipositif de memoire a semiconducteur haute densite et son procede de fabrication

Country Status (7)

Country Link
US (1) US6297090B1 (fr)
KR (1) KR100268419B1 (fr)
CN (1) CN1159760C (fr)
DE (1) DE19912220B4 (fr)
FR (1) FR2782415B1 (fr)
GB (1) GB2341724B (fr)
TW (1) TW401626B (fr)

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Also Published As

Publication number Publication date
US6297090B1 (en) 2001-10-02
CN1245349A (zh) 2000-02-23
KR100268419B1 (ko) 2000-10-16
GB2341724B (en) 2003-07-16
DE19912220A1 (de) 2000-02-24
KR20000013978A (ko) 2000-03-06
GB2341724A (en) 2000-03-22
FR2782415A1 (fr) 2000-02-18
CN1159760C (zh) 2004-07-28
TW401626B (en) 2000-08-11
GB9904384D0 (en) 1999-04-21
DE19912220B4 (de) 2005-07-07

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