FR2666685A1 - Transistor bipolaire fonctionnant a grande vitesse et procede pour fabriquer un tel transistor. - Google Patents
Transistor bipolaire fonctionnant a grande vitesse et procede pour fabriquer un tel transistor. Download PDFInfo
- Publication number
- FR2666685A1 FR2666685A1 FR9016242A FR9016242A FR2666685A1 FR 2666685 A1 FR2666685 A1 FR 2666685A1 FR 9016242 A FR9016242 A FR 9016242A FR 9016242 A FR9016242 A FR 9016242A FR 2666685 A1 FR2666685 A1 FR 2666685A1
- Authority
- FR
- France
- Prior art keywords
- layer
- oxide layer
- polysilicon
- electrode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 53
- 229920005591 polysilicon Polymers 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 25
- 230000007797 corrosion Effects 0.000 claims description 25
- 238000005468 ion implantation Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000007796 conventional method Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 135
- 239000000463 material Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 7
- -1 boron ions Chemical class 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ZFBGKBGUMMBBMY-UHFFFAOYSA-N 1,1,2-trichlorobuta-1,3-diene Chemical compound ClC(Cl)=C(Cl)C=C ZFBGKBGUMMBBMY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900014093A KR920007211A (ko) | 1990-09-06 | 1990-09-06 | 고속 바이폴라 트랜지스터 및 그의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2666685A1 true FR2666685A1 (fr) | 1992-03-13 |
Family
ID=19303325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9016242A Pending FR2666685A1 (fr) | 1990-09-06 | 1990-12-24 | Transistor bipolaire fonctionnant a grande vitesse et procede pour fabriquer un tel transistor. |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH06342801A (ko) |
| KR (1) | KR920007211A (ko) |
| FR (1) | FR2666685A1 (ko) |
| GB (1) | GB2247778A (ko) |
| IT (1) | IT1244329B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3366919B2 (ja) * | 1997-06-27 | 2003-01-14 | エヌイーシー化合物デバイス株式会社 | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0188291A2 (en) * | 1985-01-17 | 1986-07-23 | Kabushiki Kaisha Toshiba | Bipolar semiconductor device and method of manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61164262A (ja) * | 1985-01-17 | 1986-07-24 | Toshiba Corp | 半導体装置 |
| JPS62141768A (ja) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS62189753A (ja) * | 1986-02-17 | 1987-08-19 | Hitachi Ltd | 半導体装置 |
| US4829015A (en) * | 1987-05-21 | 1989-05-09 | Siemens Aktiengesellschaft | Method for manufacturing a fully self-adjusted bipolar transistor |
| JP2623635B2 (ja) * | 1988-02-16 | 1997-06-25 | ソニー株式会社 | バイポーラトランジスタ及びその製造方法 |
-
1990
- 1990-09-06 KR KR1019900014093A patent/KR920007211A/ko not_active Application Discontinuation
- 1990-12-13 IT IT02236890A patent/IT1244329B/it active IP Right Grant
- 1990-12-14 GB GB9027182A patent/GB2247778A/en not_active Withdrawn
- 1990-12-24 FR FR9016242A patent/FR2666685A1/fr active Pending
-
1991
- 1991-05-21 JP JP3144102A patent/JPH06342801A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0188291A2 (en) * | 1985-01-17 | 1986-07-23 | Kabushiki Kaisha Toshiba | Bipolar semiconductor device and method of manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| IEEE ELECTRON DEVICE LETTERS. vol. 10, no. 10, octobre 1989, NEW YORK US pages 452 - 454; K.Yano et al.: "A High-Current-Gain Low-Temperature Pseudo-HBT Utilizing a Sidewall Base-Contact Structure ( SICOS )" * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06342801A (ja) | 1994-12-13 |
| IT9022368A0 (it) | 1990-12-13 |
| IT9022368A1 (it) | 1992-03-07 |
| IT1244329B (it) | 1994-07-08 |
| KR920007211A (ko) | 1992-04-28 |
| GB2247778A (en) | 1992-03-11 |
| GB9027182D0 (en) | 1991-02-06 |
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