IT1244329B - Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione - Google Patents

Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione

Info

Publication number
IT1244329B
IT1244329B IT02236890A IT2236890A IT1244329B IT 1244329 B IT1244329 B IT 1244329B IT 02236890 A IT02236890 A IT 02236890A IT 2236890 A IT2236890 A IT 2236890A IT 1244329 B IT1244329 B IT 1244329B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
high speed
bipolar transistor
speed bipolar
Prior art date
Application number
IT02236890A
Other languages
English (en)
Other versions
IT9022368A1 (it
IT9022368A0 (it
Inventor
Myungsung Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of IT9022368A0 publication Critical patent/IT9022368A0/it
Publication of IT9022368A1 publication Critical patent/IT9022368A1/it
Application granted granted Critical
Publication of IT1244329B publication Critical patent/IT1244329B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
IT02236890A 1990-09-06 1990-12-13 Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione IT1244329B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014093A KR920007211A (ko) 1990-09-06 1990-09-06 고속 바이폴라 트랜지스터 및 그의 제조방법

Publications (3)

Publication Number Publication Date
IT9022368A0 IT9022368A0 (it) 1990-12-13
IT9022368A1 IT9022368A1 (it) 1992-03-07
IT1244329B true IT1244329B (it) 1994-07-08

Family

ID=19303325

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02236890A IT1244329B (it) 1990-09-06 1990-12-13 Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione

Country Status (5)

Country Link
JP (1) JPH06342801A (it)
KR (1) KR920007211A (it)
FR (1) FR2666685A1 (it)
GB (1) GB2247778A (it)
IT (1) IT1244329B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3366919B2 (ja) * 1997-06-27 2003-01-14 エヌイーシー化合物デバイス株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
JPS62141768A (ja) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62189753A (ja) * 1986-02-17 1987-08-19 Hitachi Ltd 半導体装置
US4829015A (en) * 1987-05-21 1989-05-09 Siemens Aktiengesellschaft Method for manufacturing a fully self-adjusted bipolar transistor
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPH06342801A (ja) 1994-12-13
GB9027182D0 (en) 1991-02-06
IT9022368A1 (it) 1992-03-07
FR2666685A1 (fr) 1992-03-13
KR920007211A (ko) 1992-04-28
IT9022368A0 (it) 1990-12-13
GB2247778A (en) 1992-03-11

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Legal Events

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0001 Granted