IT9022368A0 - Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione. - Google Patents
Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione.Info
- Publication number
- IT9022368A0 IT9022368A0 IT9022368A IT2236890A IT9022368A0 IT 9022368 A0 IT9022368 A0 IT 9022368A0 IT 9022368 A IT9022368 A IT 9022368A IT 2236890 A IT2236890 A IT 2236890A IT 9022368 A0 IT9022368 A0 IT 9022368A0
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- high speed
- bipolar transistor
- speed bipolar
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900014093A KR920007211A (ko) | 1990-09-06 | 1990-09-06 | 고속 바이폴라 트랜지스터 및 그의 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
IT9022368A0 true IT9022368A0 (it) | 1990-12-13 |
IT9022368A1 IT9022368A1 (it) | 1992-03-07 |
IT1244329B IT1244329B (it) | 1994-07-08 |
Family
ID=19303325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT02236890A IT1244329B (it) | 1990-09-06 | 1990-12-13 | Transistor bipolare di alta velocita' e procedimento per la sua fabbricazione |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH06342801A (it) |
KR (1) | KR920007211A (it) |
FR (1) | FR2666685A1 (it) |
GB (1) | GB2247778A (it) |
IT (1) | IT1244329B (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3366919B2 (ja) * | 1997-06-27 | 2003-01-14 | エヌイーシー化合物デバイス株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61164262A (ja) * | 1985-01-17 | 1986-07-24 | Toshiba Corp | 半導体装置 |
JPS61166071A (ja) * | 1985-01-17 | 1986-07-26 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS62141768A (ja) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPS62189753A (ja) * | 1986-02-17 | 1987-08-19 | Hitachi Ltd | 半導体装置 |
US4829015A (en) * | 1987-05-21 | 1989-05-09 | Siemens Aktiengesellschaft | Method for manufacturing a fully self-adjusted bipolar transistor |
JP2623635B2 (ja) * | 1988-02-16 | 1997-06-25 | ソニー株式会社 | バイポーラトランジスタ及びその製造方法 |
-
1990
- 1990-09-06 KR KR1019900014093A patent/KR920007211A/ko not_active Application Discontinuation
- 1990-12-13 IT IT02236890A patent/IT1244329B/it active IP Right Grant
- 1990-12-14 GB GB9027182A patent/GB2247778A/en not_active Withdrawn
- 1990-12-24 FR FR9016242A patent/FR2666685A1/fr active Pending
-
1991
- 1991-05-21 JP JP3144102A patent/JPH06342801A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH06342801A (ja) | 1994-12-13 |
GB2247778A (en) | 1992-03-11 |
GB9027182D0 (en) | 1991-02-06 |
IT9022368A1 (it) | 1992-03-07 |
KR920007211A (ko) | 1992-04-28 |
FR2666685A1 (fr) | 1992-03-13 |
IT1244329B (it) | 1994-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |