FR2647250B1 - Circuit de conversion de tension d'alimentation pour une memoire a semiconducteurs a densite elevee - Google Patents

Circuit de conversion de tension d'alimentation pour une memoire a semiconducteurs a densite elevee

Info

Publication number
FR2647250B1
FR2647250B1 FR898908370A FR8908370A FR2647250B1 FR 2647250 B1 FR2647250 B1 FR 2647250B1 FR 898908370 A FR898908370 A FR 898908370A FR 8908370 A FR8908370 A FR 8908370A FR 2647250 B1 FR2647250 B1 FR 2647250B1
Authority
FR
France
Prior art keywords
supply voltage
semiconductor memory
high density
conversion circuit
voltage conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR898908370A
Other languages
English (en)
Other versions
FR2647250A1 (fr
Inventor
Min Dong-Sun
Kim Chang-Hyun
Jin Dae-Je
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2647250A1 publication Critical patent/FR2647250A1/fr
Application granted granted Critical
Publication of FR2647250B1 publication Critical patent/FR2647250B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Electrical Variables (AREA)
  • Read Only Memory (AREA)
FR898908370A 1989-05-01 1989-06-23 Circuit de conversion de tension d'alimentation pour une memoire a semiconducteurs a densite elevee Expired - Lifetime FR2647250B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890005792A KR910005599B1 (ko) 1989-05-01 1989-05-01 고밀도 반도체 메모리장치의 전원 공급전압 변환회로

Publications (2)

Publication Number Publication Date
FR2647250A1 FR2647250A1 (fr) 1990-11-23
FR2647250B1 true FR2647250B1 (fr) 1994-09-16

Family

ID=19285798

Family Applications (1)

Application Number Title Priority Date Filing Date
FR898908370A Expired - Lifetime FR2647250B1 (fr) 1989-05-01 1989-06-23 Circuit de conversion de tension d'alimentation pour une memoire a semiconducteurs a densite elevee

Country Status (6)

Country Link
US (1) US5144585A (fr)
JP (1) JPH079754B2 (fr)
KR (1) KR910005599B1 (fr)
DE (1) DE3923632A1 (fr)
FR (1) FR2647250B1 (fr)
GB (1) GB2231177B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300765A (en) * 1990-03-19 1994-04-05 Mitsubishi Denki Kabushiki Kaisha Memory card with latch-up protection
JP2981263B2 (ja) * 1990-08-03 1999-11-22 富士通株式会社 半導体記憶装置
KR920010633A (ko) * 1990-11-30 1992-06-26 김광호 반도체 메모리 장치의 기준전압 발생회로
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
JP2945508B2 (ja) * 1991-06-20 1999-09-06 三菱電機株式会社 半導体装置
JP3076097B2 (ja) * 1991-08-26 2000-08-14 日本電気株式会社 基準電位発生回路
KR930008854A (ko) * 1991-10-16 1993-05-22 김광호 반도체 메모리의 내부전압공급장치
JP2870312B2 (ja) * 1992-07-28 1999-03-17 日本電気株式会社 半導体メモリ回路の調整方法
US5483152A (en) * 1993-01-12 1996-01-09 United Memories, Inc. Wide range power supply for integrated circuits
EP0594162B1 (fr) * 1992-10-22 1998-07-01 United Memories, Inc. Source d'alimentation à gamme étendue pour circuits integrés
US5721875A (en) * 1993-11-12 1998-02-24 Intel Corporation I/O transceiver having a pulsed latch receiver circuit
JPH07220472A (ja) * 1994-01-31 1995-08-18 Mitsubishi Electric Corp 内部電源回路
GB9516025D0 (en) * 1995-08-04 1995-10-04 Philips Electronics Uk Ltd Amplifier
JP3707888B2 (ja) * 1996-02-01 2005-10-19 株式会社日立製作所 半導体回路
US5889721A (en) * 1997-08-21 1999-03-30 Integrated Silicon Solution, Inc. Method and apparatus for operating functions relating to memory and/or applications that employ memory in accordance with available power
KR100576491B1 (ko) * 1999-12-23 2006-05-09 주식회사 하이닉스반도체 이중 내부전압 발생장치
US6593726B1 (en) * 2002-02-15 2003-07-15 Micron Technology, Inc. Voltage converter system and method having a stable output voltage
JP3947044B2 (ja) * 2002-05-31 2007-07-18 富士通株式会社 入出力バッファ
JP5038616B2 (ja) * 2005-11-14 2012-10-03 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5702570B2 (ja) * 2009-11-27 2015-04-15 ローム株式会社 オペアンプ及びこれを用いた液晶駆動装置、並びに、パラメータ設定回路、半導体装置、電源装置
CN102590611B (zh) * 2012-03-16 2014-04-16 钜泉光电科技(上海)股份有限公司 避免显示异常的方法、调节系统及电表
KR102246878B1 (ko) 2014-05-29 2021-04-30 삼성전자 주식회사 반도체 메모리 장치, 이를 포함하는 메모리 모듈, 및 이를 포함하는 메모리 시스템
JP2019012949A (ja) * 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置
EP4369340A1 (fr) * 2022-11-11 2024-05-15 Samsung Electronics Co., Ltd. Dispositif de mémoire comprenant un régulateur de tension

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1187312A (en) * 1968-01-12 1970-04-08 Harmer & Simmons Ltd Improvements relating to the Stabilisation of Electrical Power-Supply Systems
JPS56153415A (en) * 1980-04-28 1981-11-27 Shindengen Electric Mfg Co Ltd Parallel redundancy regulated power supply device
JPS60176121A (ja) * 1984-02-22 1985-09-10 Toshiba Corp 電圧降下回路
JPH02195596A (ja) * 1989-01-24 1990-08-02 Hitachi Ltd 半導体集積回路装置
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로

Also Published As

Publication number Publication date
KR900019019A (ko) 1990-12-22
US5144585A (en) 1992-09-01
GB2231177B (en) 1993-06-16
DE3923632A1 (de) 1990-11-15
GB8925681D0 (en) 1990-01-04
KR910005599B1 (ko) 1991-07-31
JPH02302990A (ja) 1990-12-14
FR2647250A1 (fr) 1990-11-23
GB2231177A (en) 1990-11-07
JPH079754B2 (ja) 1995-02-01

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