FR2506077A1 - Detecteur photosensible notamment pour image infrarouge - Google Patents

Detecteur photosensible notamment pour image infrarouge

Info

Publication number
FR2506077A1
FR2506077A1 FR8208511A FR8208511A FR2506077A1 FR 2506077 A1 FR2506077 A1 FR 2506077A1 FR 8208511 A FR8208511 A FR 8208511A FR 8208511 A FR8208511 A FR 8208511A FR 2506077 A1 FR2506077 A1 FR 2506077A1
Authority
FR
France
Prior art keywords
infrared image
detector
silicon
photosensitive detector
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8208511A
Other languages
English (en)
French (fr)
Other versions
FR2506077B1 (enExample
Inventor
Derek Tai-Hoi Cheung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of FR2506077A1 publication Critical patent/FR2506077A1/fr
Application granted granted Critical
Publication of FR2506077B1 publication Critical patent/FR2506077B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR8208511A 1981-05-15 1982-05-14 Detecteur photosensible notamment pour image infrarouge Granted FR2506077A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26415681A 1981-05-15 1981-05-15

Publications (2)

Publication Number Publication Date
FR2506077A1 true FR2506077A1 (fr) 1982-11-19
FR2506077B1 FR2506077B1 (enExample) 1985-01-04

Family

ID=23004854

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8208511A Granted FR2506077A1 (fr) 1981-05-15 1982-05-14 Detecteur photosensible notamment pour image infrarouge

Country Status (4)

Country Link
JP (1) JPS57198656A (enExample)
DE (1) DE3217895A1 (enExample)
FR (1) FR2506077A1 (enExample)
GB (1) GB2100511B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572610A1 (fr) * 1984-10-26 1986-05-02 Itek Corp Reseau de detecteurs infrarouges pbs-pbse et procede de fabrication

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961959A (ja) * 1982-09-30 1984-04-09 Mitsubishi Electric Corp 赤外線固体撮像素子
JPH0658952B2 (ja) * 1984-06-22 1994-08-03 三菱電機株式会社 固体撮像素子
JPH0644578B2 (ja) * 1984-12-21 1994-06-08 三菱電機株式会社 電荷転送素子
FR2803950B1 (fr) * 2000-01-14 2002-03-01 Centre Nat Rech Scient Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
US7026602B2 (en) * 2001-04-13 2006-04-11 Research Triangle Institute Electromagnetic radiation detectors having a microelectromechanical shutter device
DE102007046501A1 (de) * 2007-09-28 2009-04-09 Siemens Ag Infrarot-Bildsensor
CN113161442B (zh) * 2021-04-22 2022-10-14 合肥工业大学 一种硅肖特基结线阵列近红外光电探测器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
DE2740996A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Sensorzelle fuer einen optoelektronischen sensor
US4210922A (en) * 1975-11-28 1980-07-01 U.S. Philips Corporation Charge coupled imaging device having selective wavelength sensitivity

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2743245A1 (de) * 1977-09-26 1979-04-05 Siemens Ag Ladungsgekoppeltes bauelement
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
US4210922A (en) * 1975-11-28 1980-07-01 U.S. Philips Corporation Charge coupled imaging device having selective wavelength sensitivity
DE2740996A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Sensorzelle fuer einen optoelektronischen sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572610A1 (fr) * 1984-10-26 1986-05-02 Itek Corp Reseau de detecteurs infrarouges pbs-pbse et procede de fabrication

Also Published As

Publication number Publication date
GB2100511B (en) 1985-02-27
DE3217895A1 (de) 1982-12-02
FR2506077B1 (enExample) 1985-01-04
JPS57198656A (en) 1982-12-06
GB2100511A (en) 1982-12-22

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Legal Events

Date Code Title Description
ST Notification of lapse