DE3217895A1 - Infrarot-strahlungsdetektor - Google Patents
Infrarot-strahlungsdetektorInfo
- Publication number
- DE3217895A1 DE3217895A1 DE19823217895 DE3217895A DE3217895A1 DE 3217895 A1 DE3217895 A1 DE 3217895A1 DE 19823217895 DE19823217895 DE 19823217895 DE 3217895 A DE3217895 A DE 3217895A DE 3217895 A1 DE3217895 A1 DE 3217895A1
- Authority
- DE
- Germany
- Prior art keywords
- contacts
- channel
- substrate
- conductivity type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005855 radiation Effects 0.000 title description 10
- 230000004888 barrier function Effects 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 230000000284 resting effect Effects 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 74
- 239000010410 layer Substances 0.000 description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 230000006870 function Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000003331 infrared imaging Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 230000002207 retinal effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26415681A | 1981-05-15 | 1981-05-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3217895A1 true DE3217895A1 (de) | 1982-12-02 |
Family
ID=23004854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823217895 Ceased DE3217895A1 (de) | 1981-05-15 | 1982-05-12 | Infrarot-strahlungsdetektor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57198656A (enExample) |
| DE (1) | DE3217895A1 (enExample) |
| FR (1) | FR2506077A1 (enExample) |
| GB (1) | GB2100511B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3335117A1 (de) * | 1982-09-30 | 1984-04-26 | Mitsubishi Denki K.K., Tokio/Tokyo | Infrarot-festkoerper-bildsensor |
| DE3544450A1 (de) * | 1984-12-21 | 1986-06-26 | Mitsubishi Denki K.K., Tokio/Tokyo | Ladungsgekoppeltes bauelement |
| DE102007046501A1 (de) * | 2007-09-28 | 2009-04-09 | Siemens Ag | Infrarot-Bildsensor |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0658952B2 (ja) * | 1984-06-22 | 1994-08-03 | 三菱電機株式会社 | 固体撮像素子 |
| US4602158A (en) * | 1984-10-26 | 1986-07-22 | Itek Corporation | PbS-PbSe IR detector arrays |
| FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
| US7026602B2 (en) * | 2001-04-13 | 2006-04-11 | Research Triangle Institute | Electromagnetic radiation detectors having a microelectromechanical shutter device |
| CN113161442B (zh) * | 2021-04-22 | 2022-10-14 | 合肥工业大学 | 一种硅肖特基结线阵列近红外光电探测器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
| US4210922A (en) * | 1975-11-28 | 1980-07-01 | U.S. Philips Corporation | Charge coupled imaging device having selective wavelength sensitivity |
| DE2740996A1 (de) * | 1977-09-12 | 1979-03-22 | Siemens Ag | Sensorzelle fuer einen optoelektronischen sensor |
| DE2743245A1 (de) * | 1977-09-26 | 1979-04-05 | Siemens Ag | Ladungsgekoppeltes bauelement |
| EP0025658A3 (en) * | 1979-09-18 | 1983-04-20 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Improvements in or relating to charge storage and transfer devices and their fabrication |
-
1982
- 1982-05-10 GB GB8213498A patent/GB2100511B/en not_active Expired
- 1982-05-12 DE DE19823217895 patent/DE3217895A1/de not_active Ceased
- 1982-05-12 JP JP57080814A patent/JPS57198656A/ja active Pending
- 1982-05-14 FR FR8208511A patent/FR2506077A1/fr active Granted
Non-Patent Citations (1)
| Title |
|---|
| ELLIOT, S. KOHN: "A Charge-Compled Infrared Imaging Array with Schotthy-Barrier Detectors" In: IEEE Trans. on Elctron Dev., Vol. E-23, No. 2, Feb. 1976, S. 207-214 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3335117A1 (de) * | 1982-09-30 | 1984-04-26 | Mitsubishi Denki K.K., Tokio/Tokyo | Infrarot-festkoerper-bildsensor |
| DE3544450A1 (de) * | 1984-12-21 | 1986-06-26 | Mitsubishi Denki K.K., Tokio/Tokyo | Ladungsgekoppeltes bauelement |
| DE102007046501A1 (de) * | 2007-09-28 | 2009-04-09 | Siemens Ag | Infrarot-Bildsensor |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2100511B (en) | 1985-02-27 |
| FR2506077B1 (enExample) | 1985-01-04 |
| JPS57198656A (en) | 1982-12-06 |
| FR2506077A1 (fr) | 1982-11-19 |
| GB2100511A (en) | 1982-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69721112T2 (de) | Drei- oder Vier-Band-multispektrale Strukturen mit zwei gleichzeitigen Ausgangssignalen | |
| DE3486284T2 (de) | Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur. | |
| DE102009020218B3 (de) | Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens | |
| DE69126221T2 (de) | Röntgen-Abbildungsvorrichtung aus Festkörperbauelementen | |
| DE3486462T2 (de) | Lichtelektrischer Wandler | |
| DE3829003C2 (de) | Abbildungseinrichtung mit Lawinen-Photodiode | |
| DE69321822T2 (de) | Photodiodenstruktur | |
| DE3889477T2 (de) | Strahlungsempfindliche Halbleiteranordnung. | |
| DE10240471A1 (de) | Hochdichte Zwischen-Chip-Zwischenverbindungsstruktur | |
| DE2735651C2 (enExample) | ||
| DE2741226A1 (de) | Festkoerper-farbbildaufnahmeeinrichtung | |
| DE2636927C1 (de) | Halbleiteranordnung mit wenigstens einem Detektorelement | |
| DE2712479C2 (enExample) | ||
| DE2358672A1 (de) | Halbleiter-anordnung zur abbildung eines bestimmten gebietes und verfahren zur herstellung einer solchen anordnung | |
| DE2623541B2 (de) | Bildaufnahmeanordnung und photoempfindliches Element für eine solche Anordnung | |
| DE8706818U1 (de) | Fotodiodenmatrix | |
| EP0007384B1 (de) | Eindimensionaler CCD-Sensor mit Überlaufvorrichtung | |
| DE68923142T2 (de) | Dünnschicht-Phototransistor und solche Phototransistoren anwendende Photosensoranordnung. | |
| DE2804466C3 (de) | Festkörper-Bildaufnahmeeinrichtung | |
| DE2847778A1 (de) | Vorrichtung zur parallel-serien- umsetzung | |
| DE2313254A1 (de) | Photoelektrisches umsetzungselement fuer farbbildaufnahme- bzw. -abtastroehren und verfahren zu dessen herstellung | |
| DE69802234T2 (de) | Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement | |
| DE4310915B4 (de) | Festkörperbildsensor mit hohem Signal-Rauschverhältnis | |
| DE3217895A1 (de) | Infrarot-strahlungsdetektor | |
| DE2818002C2 (de) | Flüssigkristall-Lichtventil |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |