DE8706818U1 - - Google Patents
Info
- Publication number
- DE8706818U1 DE8706818U1 DE8706818U DE8706818U DE8706818U1 DE 8706818 U1 DE8706818 U1 DE 8706818U1 DE 8706818 U DE8706818 U DE 8706818U DE 8706818 U DE8706818 U DE 8706818U DE 8706818 U1 DE8706818 U1 DE 8706818U1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000504872A CA1269164A (en) | 1986-03-24 | 1986-03-24 | Photosensitive diode with hydrogenated amorphous silicon layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE8706818U1 true DE8706818U1 (de) | 1987-09-17 |
Family
ID=4132728
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863638018 Withdrawn DE3638018A1 (de) | 1986-03-24 | 1986-11-07 | Fotodiode, hieraus gebildete fotodioden-anordnung, sowie verfahren zur herstellung einer fotodiode |
| DE8706818U Expired DE8706818U1 (de) | 1986-03-24 | 1987-01-20 | |
| DE8700896U Expired DE8700896U1 (de) | 1986-03-24 | 1987-01-20 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863638018 Withdrawn DE3638018A1 (de) | 1986-03-24 | 1986-11-07 | Fotodiode, hieraus gebildete fotodioden-anordnung, sowie verfahren zur herstellung einer fotodiode |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8700896U Expired DE8700896U1 (de) | 1986-03-24 | 1987-01-20 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US4866499A (de) |
| JP (1) | JPS62226672A (de) |
| CN (1) | CN86108567A (de) |
| CA (1) | CA1269164A (de) |
| DE (3) | DE3638018A1 (de) |
| FR (1) | FR2596203A1 (de) |
| GB (1) | GB2188482B (de) |
| IT (1) | IT1197971B (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5223919A (en) * | 1987-02-25 | 1993-06-29 | U. S. Philips Corp. | Photosensitive device suitable for high voltage operation |
| JPH01265574A (ja) * | 1988-04-15 | 1989-10-23 | Seiko Epson Corp | 光電変換素子 |
| US5280194A (en) * | 1988-11-21 | 1994-01-18 | Micro Technology Partners | Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device |
| JP2771019B2 (ja) * | 1990-07-26 | 1998-07-02 | セントラル硝子株式会社 | 滑雪性および着氷防止性に優れた被覆塗料組成物 |
| US5260225A (en) * | 1991-12-20 | 1993-11-09 | Honeywell Inc. | Integrated infrared sensitive bolometers |
| US5319182A (en) * | 1992-03-04 | 1994-06-07 | Welch Allyn, Inc. | Integrated solid state light emitting and detecting array and apparatus employing said array |
| US5592022A (en) * | 1992-05-27 | 1997-01-07 | Chipscale, Inc. | Fabricating a semiconductor with an insulative coating |
| US5403729A (en) * | 1992-05-27 | 1995-04-04 | Micro Technology Partners | Fabricating a semiconductor with an insulative coating |
| US20020197456A1 (en) * | 1993-06-30 | 2002-12-26 | Pope Edward J. A. | Integrated electro-luminescent biochip |
| US5656547A (en) * | 1994-05-11 | 1997-08-12 | Chipscale, Inc. | Method for making a leadless surface mounted device with wrap-around flange interface contacts |
| GB2302452B (en) * | 1994-06-09 | 1998-11-18 | Chipscale Inc | Resistor fabrication |
| US6459450B2 (en) * | 1998-06-24 | 2002-10-01 | Intel Corporation | Infrared filterless pixel structure |
| US6114739A (en) * | 1998-10-19 | 2000-09-05 | Agilent Technologies | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode |
| US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
| US6284557B1 (en) | 1999-10-12 | 2001-09-04 | Taiwan Semiconductor Manufacturing Company | Optical sensor by using tunneling diode |
| US6693317B2 (en) | 2001-07-13 | 2004-02-17 | Taiwan Semiconductor Manufacturing Company | Optical sensor by using tunneling diode |
| CN1295567C (zh) * | 2004-12-06 | 2007-01-17 | 华中科技大学 | 一种柔性光学传感器的制作方法 |
| KR100670538B1 (ko) * | 2004-12-30 | 2007-01-16 | 매그나칩 반도체 유한회사 | 광 특성을 향상시킬 수 있는 이미지센서 및 그 제조 방법 |
| CN101345270B (zh) * | 2007-07-13 | 2011-05-04 | 鸿富锦精密工业（深圳）有限公司 | 太阳能电池 |
| DK3682920T3 (da) | 2013-06-18 | 2022-10-03 | Enable Injections Inc | Indretning og fremgangsmåde til hætteglasoverførsel og injektion |
| US11673796B2 (en) * | 2021-03-09 | 2023-06-13 | Palo Alto Research Center Incorporated | Scalable high-voltage control circuits using thin film electronics |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB929240A (en) * | 1954-11-30 | 1963-06-19 | Secr Aviation | Improvements in or relating to photo-sensitive semi-conductor devices |
| NL6604087A (de) * | 1966-03-29 | 1967-10-02 | ||
| US3604987A (en) * | 1968-12-06 | 1971-09-14 | Rca Corp | Radiation-sensing device comprising an array of photodiodes and switching devices in a body of semiconductor material |
| US3902066A (en) * | 1974-03-18 | 1975-08-26 | Us Air Force | Schottky barrier infrared detector arrays with charge coupled device readout |
| US4485389A (en) * | 1978-03-08 | 1984-11-27 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
| US4246043A (en) * | 1979-12-03 | 1981-01-20 | Solarex Corporation | Yttrium oxide antireflective coating for solar cells |
| JPS56115577A (en) * | 1980-02-19 | 1981-09-10 | Ricoh Co Ltd | Photodetecting circuit |
| JPS5739588A (en) * | 1980-08-22 | 1982-03-04 | Fuji Photo Film Co Ltd | Solid state image pickup device |
| GB2083701B (en) * | 1980-09-09 | 1985-09-04 | Energy Conversion Devices Inc | Graded bandgap amorphous semiconductors |
| US4517733A (en) * | 1981-01-06 | 1985-05-21 | Fuji Xerox Co., Ltd. | Process for fabricating thin film image pick-up element |
| US4633031A (en) * | 1982-09-24 | 1986-12-30 | Todorof William J | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
| US4698495A (en) * | 1984-06-12 | 1987-10-06 | Nec Corporation | Amorphous silicon photo-sensor for a contact type image sensor |
| US4724323A (en) * | 1984-10-04 | 1988-02-09 | Canon Kabushiki Kaisha | Image line sensor unit, photosensors for use in the sensor unit and method of making the photosensors |
| US4894700A (en) * | 1985-04-09 | 1990-01-16 | Fuji Xerox Co., Ltd. | Image sensor |
-
1986
- 1986-03-24 CA CA000504872A patent/CA1269164A/en not_active Expired
- 1986-11-07 DE DE19863638018 patent/DE3638018A1/de not_active Withdrawn
- 1986-11-12 IT IT22307/86A patent/IT1197971B/it active
- 1986-12-27 CN CN198686108567A patent/CN86108567A/zh active Pending
-
1987
- 1987-01-20 DE DE8706818U patent/DE8706818U1/de not_active Expired
- 1987-01-20 DE DE8700896U patent/DE8700896U1/de not_active Expired
- 1987-01-30 GB GB8702075A patent/GB2188482B/en not_active Expired - Lifetime
- 1987-03-04 JP JP62049870A patent/JPS62226672A/ja active Pending
- 1987-03-24 FR FR8704194A patent/FR2596203A1/fr not_active Withdrawn
-
1988
- 1988-12-14 US US06/284,818 patent/US4866499A/en not_active Expired - Lifetime
-
1989
- 1989-07-31 US US07/386,623 patent/US4965212A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA1269164A (en) | 1990-05-15 |
| GB8702075D0 (en) | 1987-03-04 |
| DE8700896U1 (de) | 1987-08-20 |
| US4965212A (en) | 1990-10-23 |
| JPS62226672A (ja) | 1987-10-05 |
| GB2188482A (en) | 1987-09-30 |
| IT8622307A0 (it) | 1986-11-12 |
| IT1197971B (it) | 1988-12-21 |
| IT8622307A1 (it) | 1988-05-12 |
| DE3638018A1 (de) | 1987-10-01 |
| US4866499A (en) | 1989-09-12 |
| FR2596203A1 (fr) | 1987-09-25 |
| CN86108567A (zh) | 1987-10-07 |
| GB2188482B (en) | 1990-03-07 |