IT8622307A1 - Elemento di diodo fotosensibile e procedimento di fabbricazione - Google Patents

Elemento di diodo fotosensibile e procedimento di fabbricazione

Info

Publication number
IT8622307A1
IT8622307A1 IT1986A22307A IT2230786A IT8622307A1 IT 8622307 A1 IT8622307 A1 IT 8622307A1 IT 1986A22307 A IT1986A22307 A IT 1986A22307A IT 2230786 A IT2230786 A IT 2230786A IT 8622307 A1 IT8622307 A1 IT 8622307A1
Authority
IT
Italy
Prior art keywords
diode element
manufacturing procedure
photosensitive diode
photosensitive
procedure
Prior art date
Application number
IT1986A22307A
Other languages
English (en)
Other versions
IT1197971B (it
IT8622307A0 (it
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Publication of IT8622307A0 publication Critical patent/IT8622307A0/it
Publication of IT8622307A1 publication Critical patent/IT8622307A1/it
Application granted granted Critical
Publication of IT1197971B publication Critical patent/IT1197971B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
IT22307/86A 1986-03-24 1986-11-12 Elemento di diodo fotosensibile e procedimento di fabbricazione IT1197971B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000504872A CA1269164A (en) 1986-03-24 1986-03-24 Photosensitive diode with hydrogenated amorphous silicon layer

Publications (3)

Publication Number Publication Date
IT8622307A0 IT8622307A0 (it) 1986-11-12
IT8622307A1 true IT8622307A1 (it) 1988-05-12
IT1197971B IT1197971B (it) 1988-12-21

Family

ID=4132728

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22307/86A IT1197971B (it) 1986-03-24 1986-11-12 Elemento di diodo fotosensibile e procedimento di fabbricazione

Country Status (8)

Country Link
US (2) US4866499A (it)
JP (1) JPS62226672A (it)
CN (1) CN86108567A (it)
CA (1) CA1269164A (it)
DE (3) DE3638018A1 (it)
FR (1) FR2596203A1 (it)
GB (1) GB2188482B (it)
IT (1) IT1197971B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
JPH01265574A (ja) * 1988-04-15 1989-10-23 Seiko Epson Corp 光電変換素子
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
JP2771019B2 (ja) * 1990-07-26 1998-07-02 セントラル硝子株式会社 滑雪性および着氷防止性に優れた被覆塗料組成物
US5260225A (en) * 1991-12-20 1993-11-09 Honeywell Inc. Integrated infrared sensitive bolometers
US5319182A (en) * 1992-03-04 1994-06-07 Welch Allyn, Inc. Integrated solid state light emitting and detecting array and apparatus employing said array
US5521420A (en) * 1992-05-27 1996-05-28 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US20020197456A1 (en) * 1993-06-30 2002-12-26 Pope Edward J. A. Integrated electro-luminescent biochip
US5656547A (en) * 1994-05-11 1997-08-12 Chipscale, Inc. Method for making a leadless surface mounted device with wrap-around flange interface contacts
DE19580604T1 (de) * 1994-06-09 1997-05-07 Chipscale Inc Widerstandsfabrikation
US6459450B2 (en) * 1998-06-24 2002-10-01 Intel Corporation Infrared filterless pixel structure
US6114739A (en) * 1998-10-19 2000-09-05 Agilent Technologies Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6284557B1 (en) 1999-10-12 2001-09-04 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
US6693317B2 (en) 2001-07-13 2004-02-17 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
CN1295567C (zh) * 2004-12-06 2007-01-17 华中科技大学 一种柔性光学传感器的制作方法
KR100670538B1 (ko) * 2004-12-30 2007-01-16 매그나칩 반도체 유한회사 광 특성을 향상시킬 수 있는 이미지센서 및 그 제조 방법
CN101345270B (zh) * 2007-07-13 2011-05-04 鸿富锦精密工业（深圳）有限公司 太阳能电池
ES2728054T3 (es) 2013-06-18 2019-10-22 Enable Injections Inc Aparato de transferencia e inyección de viales
US11673796B2 (en) * 2021-03-09 2023-06-13 Palo Alto Research Center Incorporated Scalable high-voltage control circuits using thin film electronics

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB929240A (en) * 1954-11-30 1963-06-19 Secr Aviation Improvements in or relating to photo-sensitive semi-conductor devices
NL6604087A (it) * 1966-03-29 1967-10-02
US3604987A (en) * 1968-12-06 1971-09-14 Rca Corp Radiation-sensing device comprising an array of photodiodes and switching devices in a body of semiconductor material
US3902066A (en) * 1974-03-18 1975-08-26 Us Air Force Schottky barrier infrared detector arrays with charge coupled device readout
US4485389A (en) * 1978-03-08 1984-11-27 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS54139342A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
JPS56115577A (en) * 1980-02-19 1981-09-10 Ricoh Co Ltd Photodetecting circuit
JPS5739588A (en) * 1980-08-22 1982-03-04 Fuji Photo Film Co Ltd Solid state image pickup device
IL63754A (en) * 1980-09-09 1984-07-31 Energy Conversion Devices Inc Photoresponsive amorphous alloys having a graded band gap,their production and devices made therefrom
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
US4633031A (en) * 1982-09-24 1986-12-30 Todorof William J Multi-layer thin film, flexible silicon alloy photovoltaic cell
US4698495A (en) * 1984-06-12 1987-10-06 Nec Corporation Amorphous silicon photo-sensor for a contact type image sensor
US4724323A (en) * 1984-10-04 1988-02-09 Canon Kabushiki Kaisha Image line sensor unit, photosensors for use in the sensor unit and method of making the photosensors
US4894700A (en) * 1985-04-09 1990-01-16 Fuji Xerox Co., Ltd. Image sensor

Also Published As

Publication number Publication date
US4965212A (en) 1990-10-23
GB8702075D0 (en) 1987-03-04
DE3638018A1 (de) 1987-10-01
US4866499A (en) 1989-09-12
FR2596203A1 (fr) 1987-09-25
DE8706818U1 (de) 1987-09-17
GB2188482A (en) 1987-09-30
IT1197971B (it) 1988-12-21
GB2188482B (en) 1990-03-07
JPS62226672A (ja) 1987-10-05
CN86108567A (zh) 1987-10-07
IT8622307A0 (it) 1986-11-12
CA1269164A (en) 1990-05-15
DE8700896U1 (de) 1987-08-20

Similar Documents

Publication Publication Date Title
IT8622307A1 (it) Elemento di diodo fotosensibile e procedimento di fabbricazione
BR8707044A (pt) Conjunto de elemento fixador
AR245280A1 (es) Elemento quimioluminiscente
DE3751708D1 (de) Elektronisches thermometer
DK381487A (da) Mekanisk ledbaand
MX162564A (es) Elemento fotografico mejorado
NO170773C (no) Forskalingselement
FI873829L (fi) Sähköluminoiva elementti
BR9000357A (pt) Elemento primario galvanico
BR8704918A (pt) Elemento de combustao nuclear
MX162217A (es) Elemento fotosensible
KR890013782A (ko) 광전자집적회로 및 그 제조방법
IT8721630A0 (it) Elemento di connessione.
MX164088B (es) Elemento fotografico mejorado
KR880701024A (ko) 웨이퍼 조립체
IT1226699B (it) Elemento di giunzione e raccordo.
IT1216811B (it) Elemento elettrocromico
IT1222803B (it) Elemento di visualizzazione
BR8706751A (pt) Elemento de ancoragem
IT1173629B (it) Elemento di fissaggio elettroisolante
BR8801643A (pt) Elemento de fixacao
IT8921976V0 (it) Elemento di raccordo
BR8702956A (pt) Elemento fototermografico
DE68926419D1 (de) Ultraschnell verarbeitetes photographisches Element
KR920008955A (ko) 쇼트키 다이오드의 제조방법