KR920008955A - 쇼트키 다이오드의 제조방법 - Google Patents

쇼트키 다이오드의 제조방법

Info

Publication number
KR920008955A
KR920008955A KR1019900017371A KR900017371A KR920008955A KR 920008955 A KR920008955 A KR 920008955A KR 1019900017371 A KR1019900017371 A KR 1019900017371A KR 900017371 A KR900017371 A KR 900017371A KR 920008955 A KR920008955 A KR 920008955A
Authority
KR
South Korea
Prior art keywords
manufacturing
schottky diode
schottky
diode
Prior art date
Application number
KR1019900017371A
Other languages
English (en)
Other versions
KR940000994B1 (ko
Inventor
김종국
임순권
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019900017371A priority Critical patent/KR940000994B1/ko
Publication of KR920008955A publication Critical patent/KR920008955A/ko
Application granted granted Critical
Publication of KR940000994B1 publication Critical patent/KR940000994B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019900017371A 1990-10-29 1990-10-29 쇼트키 다이오드의 제조방법 KR940000994B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900017371A KR940000994B1 (ko) 1990-10-29 1990-10-29 쇼트키 다이오드의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017371A KR940000994B1 (ko) 1990-10-29 1990-10-29 쇼트키 다이오드의 제조방법

Publications (2)

Publication Number Publication Date
KR920008955A true KR920008955A (ko) 1992-05-28
KR940000994B1 KR940000994B1 (ko) 1994-02-07

Family

ID=19305323

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017371A KR940000994B1 (ko) 1990-10-29 1990-10-29 쇼트키 다이오드의 제조방법

Country Status (1)

Country Link
KR (1) KR940000994B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100489743B1 (ko) * 2001-02-02 2005-05-16 샤프 가부시키가이샤 반도체 집적회로 장치, 그 제조 방법, ｉｃ 모듈, ｉｃ 카드
CN110350044A (zh) * 2019-04-01 2019-10-18 湖南正芯微电子探测器有限公司 方形螺旋硅漂移探测器及其制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100489743B1 (ko) * 2001-02-02 2005-05-16 샤프 가부시키가이샤 반도체 집적회로 장치, 그 제조 방법, ｉｃ 모듈, ｉｃ 카드
CN110350044A (zh) * 2019-04-01 2019-10-18 湖南正芯微电子探测器有限公司 方形螺旋硅漂移探测器及其制备方法
CN110350044B (zh) * 2019-04-01 2024-04-19 湖南脉探芯半导体科技有限公司 方形螺旋硅漂移探测器及其制备方法

Also Published As

Publication number Publication date
KR940000994B1 (ko) 1994-02-07

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Legal Events

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E902 Notification of reason for refusal
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Payment date: 20020107

Year of fee payment: 9

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