DE19580604T1 - Widerstandsfabrikation - Google Patents

Widerstandsfabrikation

Info

Publication number
DE19580604T1
DE19580604T1 DE19580604T DE19580604T DE19580604T1 DE 19580604 T1 DE19580604 T1 DE 19580604T1 DE 19580604 T DE19580604 T DE 19580604T DE 19580604 T DE19580604 T DE 19580604T DE 19580604 T1 DE19580604 T1 DE 19580604T1
Authority
DE
Germany
Prior art keywords
resistance fabrication
fabrication
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19580604T
Other languages
English (en)
Inventor
John G Richards
Hector Flores
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ChipScale Inc
Original Assignee
ChipScale Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ChipScale Inc filed Critical ChipScale Inc
Publication of DE19580604T1 publication Critical patent/DE19580604T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19580604T 1994-06-09 1995-06-01 Widerstandsfabrikation Withdrawn DE19580604T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25772694A 1994-06-09 1994-06-09
PCT/US1995/006929 WO1995034083A1 (en) 1994-06-09 1995-06-01 Resistor fabrication

Publications (1)

Publication Number Publication Date
DE19580604T1 true DE19580604T1 (de) 1997-05-07

Family

ID=22977494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19580604T Withdrawn DE19580604T1 (de) 1994-06-09 1995-06-01 Widerstandsfabrikation

Country Status (8)

Country Link
US (1) US6121119A (de)
JP (1) JPH10508430A (de)
KR (1) KR100358446B1 (de)
AU (1) AU2659995A (de)
DE (1) DE19580604T1 (de)
GB (1) GB2302452B (de)
HK (1) HK1011454A1 (de)
WO (1) WO1995034083A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448153B2 (en) * 1996-10-29 2002-09-10 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6498074B2 (en) 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
JP3537447B2 (ja) 1996-10-29 2004-06-14 トル‐シ・テクノロジーズ・インコーポレイテッド 集積回路及びその製造方法
US5904496A (en) * 1997-01-24 1999-05-18 Chipscale, Inc. Wafer fabrication of inside-wrapped contacts for electronic devices
US5910687A (en) * 1997-01-24 1999-06-08 Chipscale, Inc. Wafer fabrication of die-bottom contacts for electronic devices
AT405591B (de) 1997-10-03 1999-09-27 Schaffler & Co Heizelement und verfahren zu dessen herstellung
DE19755753A1 (de) * 1997-12-16 1999-06-17 Bosch Gmbh Robert Widerstandsbauelement und Verfahren zu seiner Herstellung
US6680668B2 (en) * 2001-01-19 2004-01-20 Vishay Intertechnology, Inc. Fast heat rise resistor using resistive foil
US6717254B2 (en) 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
US6753199B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6787916B2 (en) 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
US6830959B2 (en) * 2002-01-22 2004-12-14 Fairchild Semiconductor Corporation Semiconductor die package with semiconductor die having side electrical connection
KR100468850B1 (ko) * 2002-05-08 2005-01-29 삼성전자주식회사 저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치
US7612443B1 (en) 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
US6972243B2 (en) * 2003-09-30 2005-12-06 International Business Machines Corporation Fabrication of semiconductor dies with micro-pins and structures produced therewith
DE102005004160B4 (de) * 2005-01-28 2010-12-16 Infineon Technologies Ag CSP-Halbleiterbaustein, Halbleiterschaltungsanordnung und Verfahren zum Herstellen des CSP-Halbleiterbausteins
US20090032871A1 (en) * 2007-08-01 2009-02-05 Louis Vervoort Integrated circuit with interconnected frontside contact and backside contact
DE102010055935B4 (de) * 2010-12-23 2014-05-15 Epcos Ag Verfahren zum Verbinden mehrerer ungehäuster Substrate
DE102011109007A1 (de) 2011-07-29 2013-01-31 Epcos Ag Verfahren zum Herstellen eines elektrischen Bauelements und elektrisches Bauelement
US9620473B1 (en) 2013-01-18 2017-04-11 University Of Notre Dame Du Lac Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment
JP6302644B2 (ja) * 2013-11-11 2018-03-28 株式会社ディスコ ウェーハの加工方法
EP3499552A1 (de) * 2017-12-14 2019-06-19 Nexperia B.V. Halbleiterbauelement und verfahren zur herstellung
US10770432B2 (en) * 2018-03-13 2020-09-08 Stmicroelectronics S.R.L. ASICS face to face self assembly
CN109659104B (zh) * 2018-12-28 2021-06-08 广东爱晟电子科技有限公司 一种高可靠双面异质复合电极热敏芯片

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE572049A (de) * 1957-12-03 1900-01-01
NL276298A (de) * 1961-04-03 1900-01-01
JPS5144391B1 (de) * 1967-04-19 1976-11-27
US3445925A (en) * 1967-04-25 1969-05-27 Motorola Inc Method for making thin semiconductor dice
NL6706735A (de) * 1967-05-13 1968-11-14
US3594619A (en) * 1967-09-30 1971-07-20 Nippon Electric Co Face-bonded semiconductor device having improved heat dissipation
US3462655A (en) * 1967-12-01 1969-08-19 Int Rectifier Corp Semiconductor wafer forming a plurality of rectifiers
US3573516A (en) * 1969-04-23 1971-04-06 Gen Electric Rectifier bridge for use with an alternator
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array
US3666588A (en) * 1970-01-26 1972-05-30 Western Electric Co Method of retaining and bonding articles
US3680205A (en) * 1970-03-03 1972-08-01 Dionics Inc Method of producing air-isolated integrated circuits
US3686748A (en) * 1970-04-13 1972-08-29 William E Engeler Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
US3761782A (en) * 1971-05-19 1973-09-25 Signetics Corp Semiconductor structure, assembly and method
US3746945A (en) * 1971-10-27 1973-07-17 Motorola Inc Schottky diode clipper device
BE790652A (fr) * 1971-10-28 1973-02-15 Siemens Ag Composant a semi-conducteurs a connexions portantes
US3905094A (en) * 1972-01-10 1975-09-16 Displaytek Corp Thermal display module
US3886578A (en) * 1973-02-26 1975-05-27 Multi State Devices Ltd Low ohmic resistance platinum contacts for vanadium oxide thin film devices
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US3820235A (en) * 1973-05-21 1974-06-28 Philco Ford Corp Guard ring structure for microwave schottky diode
US4063176A (en) * 1976-07-29 1977-12-13 Vari-L Company, Inc. Broadband high frequency mixer
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
JPS54136176A (en) * 1978-04-13 1979-10-23 Nec Corp Manufacture of beam lead type semiconductor device
US4250520A (en) * 1979-03-14 1981-02-10 Rca Corporation Flip chip mounted diode
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
EP0029334B1 (de) * 1979-11-15 1984-04-04 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Die Kombination der Halbleitervorrichtungen mit zwei in Serie geschalteten Elektroden und ihre Herstellung
GB2067354B (en) * 1980-01-09 1984-04-18 Aei Semiconductors Ltd Mounting for a sc device
US4278985A (en) * 1980-04-14 1981-07-14 Gte Laboratories Incorporated Monolithic integrated circuit structure incorporating Schottky contact diode bridge rectifier
JPS56148848A (en) * 1980-04-21 1981-11-18 Nec Corp Beam lead type semiconductor device
DE3265928D1 (en) * 1981-01-23 1985-10-10 Fairchild Camera Instr Co Low resistance schottky diode on polysilicon/metal-silicide
JPS59185801U (ja) * 1983-05-26 1984-12-10 アルプス電気株式会社 チツプ抵抗
US4577213A (en) * 1984-03-05 1986-03-18 Honeywell Inc. Internally matched Schottky barrier beam lead diode
JPS6154954A (ja) * 1984-08-28 1986-03-19 Alps Electric Co Ltd サ−マルヘツド及びその製造方法
US4708060A (en) * 1985-02-19 1987-11-24 The United States Of America As Represented By The United States Department Of Energy Semiconductor bridge (SCB) igniter
US4639391A (en) * 1985-03-14 1987-01-27 Cts Corporation Thick film resistive paint and resistors made therefrom
IT1214621B (it) * 1985-07-04 1990-01-18 Ates Componenti Elettron Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta.
US4760369A (en) * 1985-08-23 1988-07-26 Texas Instruments Incorporated Thin film resistor and method
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
US4811080A (en) * 1985-08-27 1989-03-07 Fei Microwave, Inc. Monolithic pin diode and method for its manufacture
US4792781A (en) * 1986-02-21 1988-12-20 Tdk Corporation Chip-type resistor
CA1269164A (en) * 1986-03-24 1990-05-15 Metin Aktik Photosensitive diode with hydrogenated amorphous silicon layer
US4859629A (en) * 1986-04-18 1989-08-22 M/A-Com, Inc. Method of fabricating a semiconductor beam lead device
US4733290A (en) * 1986-04-18 1988-03-22 M/A-Com, Inc. Semiconductor device and method of fabrication
US4855796A (en) * 1986-06-06 1989-08-08 Hughes Aircraft Company Beam lead mixer diode
JPS6347972A (ja) * 1986-08-18 1988-02-29 Sanyo Electric Co Ltd 半導体装置
JPS63288062A (ja) * 1987-05-20 1988-11-25 Nec Corp ビ−ムリ−ド型ダイオ−ド
US4893166A (en) * 1987-08-21 1990-01-09 Siliconix Incorporated High value semiconductor resistor
US4780424A (en) * 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
US4788523A (en) * 1987-12-10 1988-11-29 United States Of America Viad chip resistor
JPH01257355A (ja) * 1987-12-14 1989-10-13 Mitsubishi Electric Corp マイクロ波モノリシックｉｃ
US4905071A (en) * 1988-04-01 1990-02-27 Alpha Industries, Inc. Monolithic series-shunt diode switch
US4999684A (en) * 1988-05-06 1991-03-12 General Electric Company Symmetrical blocking high voltage breakdown semiconducotr device
US5006421A (en) * 1988-09-30 1991-04-09 Siemens-Bendix Automotive Electronics, L.P. Metalization systems for heater/sensor elements
US5162258A (en) * 1988-10-17 1992-11-10 Lemnios Zachary J Three metal personalization of application specific monolithic microwave integrated circuit
AU4649489A (en) * 1988-11-21 1990-06-12 M-Pulse Microwave An improved beam leads for schottky-barrier diodes in a ring quand
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
US5024966A (en) * 1988-12-21 1991-06-18 At&T Bell Laboratories Method of forming a silicon-based semiconductor optical device mount
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
WO1990015438A1 (en) * 1989-06-08 1990-12-13 Unistructure, Inc. Beam lead and semiconductor device structure and method for fabricating integrated structure
JP2605875B2 (ja) * 1989-07-10 1997-04-30 富士ゼロックス株式会社 抵抗体膜およびその形成方法
JPH03129738A (ja) * 1989-07-10 1991-06-03 Nec Corp 半導体装置
US5034801A (en) * 1989-07-31 1991-07-23 W. L. Gore & Associates, Inc. Intergrated circuit element having a planar, solvent-free dielectric layer
FR2653588B1 (fr) * 1989-10-20 1992-02-07 Electro Resistance Resistance electrique sous forme de puce a montage de surface et son procede de fabrication.
US5081473A (en) * 1990-07-26 1992-01-14 Xerox Corporation Temperature control transducer and MOS driver for thermal ink jet printing chips
US5294910A (en) * 1991-07-01 1994-03-15 Murata Manufacturing Co., Ltd. Platinum temperature sensor
JPH0510828A (ja) * 1991-07-03 1993-01-19 Murata Mfg Co Ltd 白金温度センサの製造方法
FR2681978B1 (fr) * 1991-09-26 1993-12-24 Sgs Thomson Microelectronics Sa Resistance de precision et procede de fabrication.
US5287083A (en) * 1992-03-30 1994-02-15 Dale Electronics, Inc. Bulk metal chip resistor
US5268310A (en) * 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5466484A (en) * 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
DE4339551C1 (de) * 1993-11-19 1994-10-13 Heusler Isabellenhuette Widerstand in SMD-Bauweise und Verfahren zu seiner Herstellung sowie Leiterplatte mit solchem Widerstand

Also Published As

Publication number Publication date
AU2659995A (en) 1996-01-04
GB9623265D0 (en) 1997-01-08
GB2302452B (en) 1998-11-18
HK1011454A1 (en) 1999-07-09
WO1995034083A1 (en) 1995-12-14
KR100358446B1 (ko) 2003-01-29
JPH10508430A (ja) 1998-08-18
GB2302452A (en) 1997-01-15
US6121119A (en) 2000-09-19

Similar Documents

Publication Publication Date Title
DE19580604T1 (de) Widerstandsfabrikation
FI955157A0 (fi) Mikrogyrometri
DE69503614D1 (de) Supraleitender übergang
DE19581562T1 (de) Widerstandsnetz
DE69500186D1 (de) Widerstandspaste
KR950023844U (ko) 쎈추로
FI1795U1 (fi) Profilerande kurlmaetare
FI2026U1 (fi) Skjutpanelningskonstruktion
FI1880U1 (fi) Avluftningsbrunn
FI1928U1 (fi) Musunderlag
FI1814U1 (fi) Seglings-sett
FI1576U1 (fi) Spegelanordning
FI1569U1 (fi) Foerflyttbar biltvaettanordning
FI1404U1 (fi) Draghjul
FI1487U1 (fi) Naetlyftare
FI1530U1 (fi) Toejningsbaenk
FI1535U1 (fi) Roterande underlag
FI1548U1 (fi) Rensanordning foer regnvattenraenna
FI1621U1 (fi) Friktionsmatta
FI1643U1 (fi) Baot
FI1735U1 (fi) Kulstoppare
FI1738U1 (fi) Moessa
FI1761U1 (fi) Betongingrepp
FI2185U1 (fi) Skofoervaringsskaop
FI1868U1 (fi) Maolstycke foer bollspel

Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee