JPS57198656A - Detecter responding to light of predetermined wavelength - Google Patents

Detecter responding to light of predetermined wavelength

Info

Publication number
JPS57198656A
JPS57198656A JP57080814A JP8081482A JPS57198656A JP S57198656 A JPS57198656 A JP S57198656A JP 57080814 A JP57080814 A JP 57080814A JP 8081482 A JP8081482 A JP 8081482A JP S57198656 A JPS57198656 A JP S57198656A
Authority
JP
Japan
Prior art keywords
detecter
responding
light
predetermined wavelength
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57080814A
Other languages
English (en)
Japanese (ja)
Inventor
Tai Hoi Chiyun Deritsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of JPS57198656A publication Critical patent/JPS57198656A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57080814A 1981-05-15 1982-05-12 Detecter responding to light of predetermined wavelength Pending JPS57198656A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26415681A 1981-05-15 1981-05-15

Publications (1)

Publication Number Publication Date
JPS57198656A true JPS57198656A (en) 1982-12-06

Family

ID=23004854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080814A Pending JPS57198656A (en) 1981-05-15 1982-05-12 Detecter responding to light of predetermined wavelength

Country Status (4)

Country Link
JP (1) JPS57198656A (enExample)
DE (1) DE3217895A1 (enExample)
FR (1) FR2506077A1 (enExample)
GB (1) GB2100511B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617662A (ja) * 1984-06-22 1986-01-14 Mitsubishi Electric Corp 固体撮像素子
CN113161442A (zh) * 2021-04-22 2021-07-23 合肥工业大学 一种硅肖特基结线阵列近红外光电探测器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961959A (ja) * 1982-09-30 1984-04-09 Mitsubishi Electric Corp 赤外線固体撮像素子
US4602158A (en) * 1984-10-26 1986-07-22 Itek Corporation PbS-PbSe IR detector arrays
JPH0644578B2 (ja) * 1984-12-21 1994-06-08 三菱電機株式会社 電荷転送素子
FR2803950B1 (fr) * 2000-01-14 2002-03-01 Centre Nat Rech Scient Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
US7026602B2 (en) * 2001-04-13 2006-04-11 Research Triangle Institute Electromagnetic radiation detectors having a microelectromechanical shutter device
DE102007046501A1 (de) * 2007-09-28 2009-04-09 Siemens Ag Infrarot-Bildsensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457869A (en) * 1977-09-26 1979-05-10 Siemens Ag Charge coupled element
JPS56155571A (en) * 1979-09-18 1981-12-01 Secr Defence Brit Charge transfer device and method of manufacturing same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
US4210922A (en) * 1975-11-28 1980-07-01 U.S. Philips Corporation Charge coupled imaging device having selective wavelength sensitivity
DE2740996A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Sensorzelle fuer einen optoelektronischen sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457869A (en) * 1977-09-26 1979-05-10 Siemens Ag Charge coupled element
JPS56155571A (en) * 1979-09-18 1981-12-01 Secr Defence Brit Charge transfer device and method of manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617662A (ja) * 1984-06-22 1986-01-14 Mitsubishi Electric Corp 固体撮像素子
CN113161442A (zh) * 2021-04-22 2021-07-23 合肥工业大学 一种硅肖特基结线阵列近红外光电探测器
CN113161442B (zh) * 2021-04-22 2022-10-14 合肥工业大学 一种硅肖特基结线阵列近红外光电探测器

Also Published As

Publication number Publication date
FR2506077A1 (fr) 1982-11-19
GB2100511B (en) 1985-02-27
GB2100511A (en) 1982-12-22
DE3217895A1 (de) 1982-12-02
FR2506077B1 (enExample) 1985-01-04

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